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    Semiconductor device
    2.
    发明公开
    Semiconductor device 失效
    半导体器件

    公开(公告)号：EP0036319A1

    公开(公告)日：1981-09-23

    申请号：EP81301084.0

    申请日：1981-03-16

    申请人： Hitachi, Ltd. ,  Nippon Telegraph and Telephone Public Corporation

    发明人： Sugawara, Yoshitaka ,  Kamei, Tatsuya ,  Sakurai, Tetsuma

    IPC分类号： H01L29/72

    CPC分类号： H01L29/402 ,  H01L29/0821 ,  H01L29/41708 ,  H01L29/735

    摘要： A lateral transistor having a high breakdown voltage and operable with an improved current amplification factor and an improved cut-off frequency comprises in a semiconductor substrate (14) of one conductivity type, a base layer (16) of the one conductivity type and an emitter layer (11) of the other conductivity type formed in the base layer. A first collector layer (12) of the other conductivity type is formed in the one principal surface of the substrate apart from the base layer and a second collector layer (13) of the same conductivity type having an impurity concentration lower than that of the first collector layer is formed between the first collector layer and the base layer in contact with the latter layers. Emitter, base and collector electrodes (17,18,19) make ohmic contact with the emitter, base and first collector layers respectively. The emitter electrode extends on a passivation film (15) covering the one principal surface of the substrate to terminate at a point on the second collector layer.

    摘要翻译： 具有高击穿电压并可用改进的电流放大因子和改善的截止频率操作的横向晶体管包括在一种导电类型的半导体衬底（14）中的一种导电类型的基极层（16）和发射极 在基层中形成的另一种导电类型的层（11）。 另一种导电类型的第一集电极层（12）形成在基底的一个主表面中，除了基底层和具有相同导电类型的第二集电极层（13），其杂质浓度低于第一集电极层 集电极层形成在第一集电极层和与后一层接触的基极层之间。 发射极，基极和集电极（17,18,19）分别与发射极，基极和第一集电极层进行欧姆接触。 发射极电极在覆盖基板的一个主表面的钝化膜（15）上延伸，以终止于第二集电极层上的一点。

    Semiconductor switch circuit
    4.
    发明公开
    Semiconductor switch circuit 失效
    半导体开关电路

    公开(公告)号：EP0367301A3

    公开(公告)日：1990-05-16

    申请号：EP89123184.7

    申请日：1985-06-21

    申请人： HITACHI, LTD. ,  NIPPON TELEGRAPH AND TELEPHONE CORPORATION

    发明人： Sugawara, Yoshitaka ,  Kitano, Junjiro ,  Kimura, Tadakatsu ,  Inabe, Yasunobu ,  Tanabe, Masa-aki

    IPC分类号： H03K17/687 ,  H03K17/60 ,  H03K17/73

    CPC分类号： H03K17/567

    摘要： A semiconductor switching device of field-drive type includes a bipolar component having a pnp transistor portion (8) and a npn transistor portion (9), said pnp transistor portion (8) and said npn transistor portion (9) being connected to cause a positive feedback, and a n-channel MOS transistor (11) connected across an emitter electrode (n3) and a collector electrode (n2) of said npn transistor portion (9), wherein a p-channel MOS transistor (10) is connected across an emitter electrode (p1) and a connector electrode (p2) of the pnp transistor portion (8), and a control terminal of said n-channel MOS transistor (11) is electrically connected with a control terminal of said p-channel MOS transistor (10). Said device is operable to control the main drive section even in the floating state and to drive the main drive section by a small control current.

    High voltage resistance element
    6.
    发明公开
    High voltage resistance element 失效
    高电压电阻元件。

    公开(公告)号：EP0077072A2

    公开(公告)日：1983-04-20

    申请号：EP82109430.7

    申请日：1982-10-12

    申请人： Hitachi, Ltd.

    发明人： Sugawara, Yoshitaka

    IPC分类号： H01L29/86

    CPC分类号： H01L29/404 ,  H01L29/8605

    摘要： A resistance element capable of withstanding a high voltage is formed through impurity diffusion in a single crystal island (1) of a semiconductor integrated circuit substrate. The resistance element includes a resistive region (2; 16) formed in an exposed surface of the single crystal island (1) and folded reciprocatively by at least one and a half turns in a planar zigzag-like pattern. The pitch at which the resistive region is folded is decreased as viewed in the direction in which extension of depletion layer formed within the single crystal island upon application of a voltage between two ends of the resistive region is decreased.

    Bipolar semiconductor devices
    10.
    发明公开
    Bipolar semiconductor devices 失效
    双极半导体器件

    公开(公告)号：EP0673072A3

    公开(公告)日：1995-11-08

    申请号：EP95301625.0

    申请日：1995-03-13

    申请人： HITACHI, LTD. ,  HITACHI HARAMACHI ELECTRONICS CO., LTD.

    发明人： Arakawa, Hidetoshi ,  Sugawara, Yoshitaka ,  Inaba, Masamitsu

    IPC分类号： H01L29/735 ,  H01L29/739 ,  H01L29/74

    CPC分类号： H01L29/7317 ,  H01L29/735 ,  H01L29/7393 ,  H01L29/7436

    摘要： In a lateral type p-n-p transistor, n-type semiconductor base substance and n-type base region is connected through a high resistance. Due to the high resistance, since an affect in a conjunction capacity between p-type collector (23) and n-type semiconductor base (11) substance can be lessen, a cutoff frequency in the lateral type p-n-p transistor can be heighten. Thereby, a high frequency in a high breakdown voltage lateral type semiconductor device can be improved. The contact condition is avoided by separating the interval between a high concentration of n-base region (11) having a high impurity concentration and a high concentration of p-collector region (23) having a low impurity concentration. Without the lowing in a breakdown voltage, the concentration of the p-collector region (23) having the low impurity concentration can be heighten, thereby a collector resistance can be made small. At the transistor operation time, the voltage between the emitter (21) and the base (11) can be lowered, a current capacity can be improved.

    摘要翻译： 在横型p-n-p晶体管中，n型半导体基体与n型基极区通过高电阻连接。 由于高电阻，因为可以减小p型集电极（23）与n型半导体基极（11）物质之间的结合电容的影响，所以可以提高横向型p-n-p晶体管的截止频率。 由此，可以提高高耐压横向型半导体装置的高频率。 通过分离具有高杂质浓度的高浓度n基区（11）和具有低杂质浓度的高浓度p集电极区（23）之间的间隔来避免接触状况。 如果不降低击穿电压，则可以提高杂质浓度低的p集电极区域（23）的浓度，可以使集电极电阻变小。 在晶体管工作时间，发射极（21）和基极（11）之间的电压可以降低，电流容量可以提高。