公开(公告)号：EP1154466A4

公开(公告)日：2003-08-27

申请号：EP00901898

申请日：2000-01-26

申请人： TOKYO ELECTRON LTD

发明人： AMANO HIDEAKI ,  ISHIZUKA SHUICHI ,  KOBAYASHI TAKASHI ,  TSUBOI KYO

IPC分类号： C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/511 ,  H01J37/32 ,  H01L21/00 ,  H01L21/205

CPC分类号： H01L21/67103 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/50 ,  C23C16/511 ,  H01J37/32192 ,  H01J2237/2001 ,  H01L21/67069

摘要： Temperature adjustment means is buried near the upper surface of a ring structure that has substantially the same height as a wafer stage and surrounds it. The temperature adjustment means is controlled by a temperature control unit (61) according to a recipe for the process conditions so that the temperature of the wafer surface and the upper surface of the ring structure may become uniform. This minimizes the difference between temperatures above the wafer and above the ring structure, resulting in uniform deposition of film.

摘要翻译： 温度调节装置被埋在围绕用于半导体晶片的台的环件的上部，并且具有与该台相同的高度。 温度调节装置由环状件温度控制器61根据用于设定工艺条件的配方以使得晶片的表面和环形部件的上表面的温度均匀的方式控制， 分别。 此时，晶片上方和环状构件的上表面之间的温度差变小，能够形成均匀性较高的膜。

公开(公告)号：EP1205964A4

公开(公告)日：2005-02-02

申请号：EP00937315

申请日：2000-06-20

申请人： TOKYO ELECTRON LTD

发明人： KOMINO MITSUAKI ,  SASAKI YASUHARU ,  TSUBOI KYO ,  AMANO HIDEAKI

IPC分类号： C23C16/46 ,  H01L21/00 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/683 ,  C23C16/505

CPC分类号： H01L21/67109 ,  C23C16/46 ,  H01J2237/2002

摘要： An electrode structure is provided for use in a plasma device that processes a workpiece (W) using a plasma in a process chamber (26) in a vacuum. An electrode (38) includes a heater (44). The electrode (38) is coupled to a cooling block (40) having a cooling jacket (58) for cooling the electrode. A heat-resistant metal sealant (66A, 66B) covers the electrode in a heat-transfer space (62, 64) formed between the electrode and the cooling block. Gas supply means (94) on the electrode side supplies a heat medium to the space (62, 64). Such an electrode structure maintains the electrode sealed in the space in a high temperature range above 200 DEG C, even at 350 to 500 DEG C, and prevents the gas leakage.