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36 条记录 (耗时 0.012 秒)

    Methods, structures and designs for self-aligning local interconnects used in integrated circuits
    3.
    发明公开
    Methods, structures and designs for self-aligning local interconnects used in integrated circuits 有权
    Methode zur Herstellung selbstjustierter lokaler Interconnects in integrierten Schaltungen

    公开(公告)号：EP2592649A1

    公开(公告)日：2013-05-15

    申请号：EP13154842.2

    申请日：2008-10-20

    申请人： Tela Innovations, Inc.

    发明人： Smayling, Michael C ,  Becker, Scott T

    IPC分类号： H01L21/8238 ,  H01L21/768 ,  H01L21/285

    CPC分类号： H01L27/092 ,  G03F1/14 ,  G06F17/5077 ,  H01L21/28518 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/823475 ,  H01L21/823828 ,  H01L21/823871 ,  H01L23/528 ,  H01L27/0207 ,  H01L27/088 ,  H01L27/105 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Methods, structures and designs for self-aligned local interconnects are provided. The method includes designing diffusion regions to be in a substrate. Some of a plurality of gates (74) are designed to be active gates and some of the plurality of gates are designed to be formed over isolation regions (180). The method includes designing the plurality of gates in a regular and repeating alignment along a same direction, and each of the plurality of gates are designed to have dielectric spacers (230). The method also includes designing a local interconnect layer (196) between or adjacent to the plurality of gates. The local interconnect layer is conductive and disposed over the substrate to allow electrical contact and interconnection with or to some of the diffusion regions (184) of the active gates. The local interconnect layer is self-aligned by the dielectric spacers of the plurality of gates.

    摘要翻译： 提供了自对准局部互连的方法，结构和设计。 该方法包括将扩散区域设计在衬底中。 多个栅极（74）中的一些被设计为有源栅极，并且多个栅极中的一些被设计为形成在隔离区域（180）上。 该方法包括沿相同方向以规则且重复的对准来设计多个栅极，并且多个栅极中的每一个被设计成具有电介质间隔物（230）。 该方法还包括在多个门之间或邻近设计局部互连层（196）。 局部互连层是导电的并且设置在衬底上，以允许与有源栅极的一些扩散区域（184）的电接触和互连。 局部互连层通过多个栅极的介电间隔物自对准。

    Chemically amplified negative resist composition and patterning process
    5.
    发明公开
    Chemically amplified negative resist composition and patterning process 有权
    Chemischverstärktenegative Resistzusammensetzung und Verfahren zur Herstellung von Mustern

    公开(公告)号：EP2362267A1

    公开(公告)日：2011-08-31

    申请号：EP11001591.4

    申请日：2011-02-25

    申请人： Shin-Etsu Chemical Co., Ltd.

    发明人： Masunaga, Keiichi ,  Watanabe, Satoshi ,  Hatakeyama, Jun ,  Ohsawa, Youichi ,  Domon, Daisuke

    IPC分类号： G03F7/004 ,  G03F7/038

    CPC分类号： G03F7/0382 ,  G03F1/14 ,  G03F7/0045 ,  G03F7/0046 ,  Y10S430/11 ,  Y10S430/111

    摘要： A chemically amplified negative resist composition is provided comprising (A) an alkali-soluble base polymer, (B) an acid generator, and (C) a nitrogen-containing compound, the base polymer (A) turning alkali insoluble under the catalysis of acid. A polymer having a fluorinated carboxylic acid onium salt on a side chain is included as the base polymer. Processing the negative resist composition by a lithography process may form a resist pattern with advantages including uniform low diffusion of acid, improved LER, and reduced substrate poisoning.

    摘要翻译： 提供化学放大型负性抗蚀剂组合物，其包含（A）碱溶性基础聚合物，（B）酸产生剂和（C）含氮化合物，所述碱性聚合物（A）在酸催化下转化碱不溶性 。 包含侧链上具有氟化羧酸鎓盐的聚合物作为基础聚合物。 通过光刻工艺处理负光刻胶组合物可形成抗蚀剂图案，其优点包括酸的均匀低扩散，改进的LER和减少的底物中毒。

    Binary photomask blank and binary photomask making method
    10.
    发明公开
    Binary photomask blank and binary photomask making method 有权
    Bin rer Fo ling ling ling ke ke ke ke ke ke ke ke ke ke ke ke ke ke ke ke ke

    公开(公告)号：EP2418542A2

    公开(公告)日：2012-02-15

    申请号：EP11176233.2

    申请日：2011-08-02

    申请人： Shin-Etsu Chemical Co., Ltd.

    发明人： Yoshikawa, Hiroki ,  Inazuki, Yukio ,  Nishikawa, Kazuhiro ,  Kanekko, Hideo

    IPC分类号： G03F1/00

    CPC分类号： G03F1/14 ,  G03F1/32 ,  G03F1/50 ,  G03F1/58

    摘要： A binary photomask blank has on a transparent substrate a light-shielding film including substrate-side and surface-side compositionally graded layers, having a thickness of 35-60 nm, and composed of a silicon base material containing a transition metal and N and/or O. The substrate-side compositionally graded layer has a thickness of 10-58.5 nm, and a N+O content of 25-40 at% at its lower surface and 10-23 at% at its upper surface. The surface-side compositionally graded layer has a thickness of 1.5-8 nm, and a N+O content of 10-45 at% at its lower surface and 45-55 at% at its upper surface.

    摘要翻译： 二元光掩模坯料在透明基板上具有包括厚度为35-60nm的基板侧和表面侧成分梯度层的遮光膜，并且由含有过渡金属和N和/ 基底侧组成梯度层的厚度为10-58.5nm，N + O含量在其下表面为25-40at％，在其上表面为10-23at％。 表面侧组成梯度层的厚度为1.5-8nm，其下表面的N + O含量为10-45原子％，其上表面为45-55原子％。