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    HIGH SPRING FORCE SHUTTER FOR DYNAMIC SHADE, AND/OR ASSOCIATED METHODS
    1.
    发明公开
    HIGH SPRING FORCE SHUTTER FOR DYNAMIC SHADE, AND/OR ASSOCIATED METHODS 审中-公开

    公开(公告)号：EP4382632A3

    公开(公告)日：2024-10-23

    申请号：EP24172444.2

    申请日：2022-03-15

    申请人： Guardian Glass, LLC

    发明人： BLUSH, Jason ,  HORN, Lindsay ,  PETRMICHL, Rudolph ,  FINCH, Joshua

    IPC分类号： E06B9/264 ,  E06B9/40 ,  E06B3/67 ,  C23C14/00 ,  C23C14/08

    摘要： Certain example embodiments relate to electric, potentially-driven shades usable with insulating glass (IG) units, IG units including such shades, and/or associated methods. In such a unit, a dynamic shade is located between the substrates defining the IG unit, and is movable between retracted and extended positions. The dynamic shade includes on-glass layers including a transparent conductor and an insulator or dielectric film, as well as a shutter. The shutter includes a resilient polymer-based layer and layers on opposing surfaces thereof. A first voltage is applied to the transparent conductors to cause the shutter to extend to a closed position.

    METHOD FOR PREPARING OXIDE THIN FILM
    9.
    发明公开
    METHOD FOR PREPARING OXIDE THIN FILM 审中-公开

    公开(公告)号：EP4234756A1

    公开(公告)日：2023-08-30

    申请号：EP21885015.4

    申请日：2021-10-21

    申请人： Beijing NAURA Microelectronics Equipment Co., Ltd.

    发明人： LUO, Jianheng

    IPC分类号： C23C14/35 ,  C23C14/06 ,  C23C14/54 ,  C23C14/08 ,  C23C14/10 ,  H01L21/02

    摘要： The oxide film preparation method of the present disclosure includes placing a wafer that is to be deposited with a film in a reaction chamber, introducing a first mixed gas of a bombardment gas and an oxidization gas into the reaction chamber, applying DC power and radio frequency power to the target, exciting the first mixed gas to form a plasma to bombard the target to form an oxide film on the wafer, stopping applying the DC power and the RF power on the target, introducing a second mixed gas of the bombardment gas, the oxidization gas, and nitrogen into the reaction chamber, applying the RF power to the base, exciting the second mixed gas to form the plasma to bombard the oxide film to form an oxynitride film, continuing to introduce the second mixed gas to the reaction chamber, exciting the second mixed gas to form the plasma to bombard the target and the oxynitride film formed in step 3 to form an oxynitride film on the oxynitride film formed in step 3.