利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

198 条记录 (耗时 0.012 秒)

    Susceptors for semiconductor-producing apparatuses
    102.
    发明公开
    Susceptors for semiconductor-producing apparatuses 有权
    SuzeptorfürHalbleiterherstellungsgeräte

    公开(公告)号：EP1202338A1

    公开(公告)日：2002-05-02

    申请号：EP01308981.8

    申请日：2001-10-23

    申请人： NGK INSULATORS, LTD.

    发明人： Yamaguchi, Shinji

    IPC分类号： H01L21/68 ,  H01L21/00

    CPC分类号： H01L21/67103 ,  H01L21/68757

    摘要： A susceptor (1) made of a ceramic material for placing and heating an object to be processed, on a placing face thereof in a semiconductor-producing apparatus, includes a surface layer (3) having the placing face, and a supporting layer (2) integrated with the surface layer (3). The volume resistivity of the surface layer (3) is lower than that of the supporting layer.

    摘要翻译： 在半导体制造装置的放置面上，由陶瓷材料制成的用于放置加热物体的感受体（1）包括具有放置面的表面层（3）和支撑层（2） ）与表面层（3）集成。 表面层（3）的体积电阻率低于支撑层的体积电阻率。

    SUBSTRATE SUPPORT FOR A THERMAL PROCESSING CHAMBER
    104.
    发明公开
    SUBSTRATE SUPPORT FOR A THERMAL PROCESSING CHAMBER 审中-公开
    衬底载体热处理室

    公开(公告)号：EP1055252A1

    公开(公告)日：2000-11-29

    申请号：EP99905887.8

    申请日：1999-02-08

    申请人： Applied Materials, Inc.

    发明人： JENNINGS, Dean, C.

    IPC分类号： H01L21/00

    CPC分类号： H01L21/68757 ,  C23C16/4581 ,  Y10S156/914

    摘要： A semiconductor wafer support for use in a thermal processing chamber includes a shelf for receiving a semiconductor wafer. The wafer support is formed of a silicon carbide substrate having a polysilicon layer disposed on the substrate, and a silicon nitride layer disposed on the polysilicon layer. A method of forming the multi-layered semiconductor wafer support is also disclosed.

    A substrate carrier
    105.
    发明公开
    A substrate carrier 失效
    Ein Substrathalter。

    公开(公告)号：EP0614212A1

    公开(公告)日：1994-09-07

    申请号：EP94200490.4

    申请日：1994-02-24

    申请人： XYCARB B.V.

    发明人： Haafkens, Maarten Hendrik ,  Sielcken, Marinus Otto

    IPC分类号： H01L21/00

    CPC分类号： H01L21/68757 ,  H01L21/6875 ,  Y10T428/30

    摘要： A flat substrate carrier comprising a machined main surface for supporting substrates to be treated, a surface opposite to the main surface and coating on all sides. The main surface may have been machined with a view to the removal of the treated substrates from the main surface following treatment. The opposite surface has been subjected to such a machining operation or treatment that the mechanical stresses at both surfaces substantially compensate each other. The opposite surface may be machined over substantially the same area as the main surface, for example by using a material-removing operation or an EDM-operation. Both surfaces may have been subjected to the same operation. In case a treatment is carried out, which treatment may be a physical or a chemical treatment, just like the treatment by which the coating is applied, the thickness of the coating at the opposite surface may be less than the maximum thickness of the coating at the main surface. The substrate carrier itself may comprise graphite, carbon, ceramics, metal or a metal alloy, whilst the coating may comprise silicon carbide, pyrolytic graphite, aluminium nitride, aluminium oxide or silicon nitride. The thickness of the coating may range from 1 - 1,000 µm. The advantage of the proposed substrate carrier is that it will not warp after the coating has been applied.

    摘要翻译： 平面基板载体，其包括用于支撑要处理的基板的加工主表面，与主表面相对的表面和在所有侧面上的涂层。 主表面可以被加工，以便在处理之后从主表面去除经处理的基材。 相反的表面已经经过这样的机械加工或处理，使得两个表面的机械应力基本上相互补偿。 相反的表面可以在与主表面基本相同的区域上加工，例如通过使用材料去除操作或EDM操作来加工。 两个表面可能都经过相同的操作。 在进行处理的情况下，哪种处理可以是物理或化学处理，就像施加涂层的处理一样，相对表面上的涂层的厚度可以小于涂层的最大厚度 主表面。 衬底载体本身可以包括石墨，碳，陶瓷，金属或金属合金，而涂层可以包括碳化硅，热解石墨，氮化铝，氧化铝或氮化硅。 涂层的厚度可以在1-1000μm的范围内。 所提出的衬底载体的优点是在施加涂层后它不会翘曲。

    Apparatus for mechanically clamping semiconductor wafer against pliable thermally conductive surface
    107.
    发明公开
    Apparatus for mechanically clamping semiconductor wafer against pliable thermally conductive surface 失效
    装置，用于机械地夹持的半导体晶片抵靠柔性导热表面。

    公开(公告)号：EP0016579A1

    公开(公告)日：1980-10-01

    申请号：EP80300665.9

    申请日：1980-03-05

    申请人： VARIAN ASSOCIATES, INC.

    发明人： Faretra, Ronald Anthony

    IPC分类号： H01L21/68

    CPC分类号： H01L21/68721 ,  H01L21/68757 ,  H01L21/68764 ,  H01L21/68785 ,  Y10S269/903

    摘要： An apparatus (10) for providing active cooling for semiconductor wafers during implantation in an ion implantation chamber includes a housing (40) incorporating a convexly curved platen (30). The platen (30) has a coating (31) of a pliable thermally conductive material adhered to the surface thereof. A clamping ring (36) is mounted within the housing (40) in slidable relationship with the convexly curved platen (30)sothatthetravel of the clamping ring (36) ranges between a receiving position wherein the clamping ring and the convexly curved platen define a slot (11) for receiving a semiconductor wafer (13, 32) and a locked position wherein a semiconductor wafer (13, 32) is firmly pressed against the convexly curved platen (30) by the contact of the clamping ring (36) against the semiconductor wafer (13,32) at its circumferential edge. In the locked position the wafer (13, 32) substantially conforms on its back side to the contour of the convexly curved platen (30). An active cooling means (28, 39-41) is provided for transferring thermal energy away from the platen (30).

    WAFER CHUCK FEATURING REDUCED FRICTION SUPPORT SURFACE
    110.
    发明公开
    WAFER CHUCK FEATURING REDUCED FRICTION SUPPORT SURFACE 审中-公开

    公开(公告)号：EP3334566A1

    公开(公告)日：2018-06-20

    申请号：EP16837531.9

    申请日：2016-08-10

    申请人： M Cubed Technologies Inc.

    发明人： GRATRIX, Edward J.

    IPC分类号： B24B37/14 ,  B24B37/16 ,  G03F7/20 ,  H01L21/683 ,  H01L21/687

    CPC分类号： H01L21/68735 ,  B24B37/14 ,  B24B37/16 ,  B24B37/30 ,  G03F7/707 ,  H01L21/6875 ,  H01L21/68757

    摘要： Grinding, lapping and polishing basically work by making scratches in the body being ground, lapped or polished. The scratches typically are linear. The scratches gives rise to a directionality component of friction: the friction coefficient is less in the direction along the scratch than in a direction orthogonal, or across, the scratch. In a wafer handling/chucking situation, one wants the wafer to settle on the chuck, which involves the outer regions of the wafer moving radially with respect to the chuck. One can reduce friction in the radial direction by giving the lapping scratches a preferred orientation, namely, radial. This can be achieved by making the final passes of the lapping tool move predominantly in radial directions.