摘要:
A method for manufacturing a micromorph tandem cell is disclosed. The micromorph tandem cell comprises a μc-Si:H bottom cell and an a-Si:H top cell, an LPCVD ZnO front contact layer and a ZnO back contact in combination with a white reflector. The method comprises the steps of — applying an AR-Anti-Reflecting-concept to the micromorph tandem cell; — implementing an intermediate reflector in the micromorph tandem cell. The micromorph tandem cell can achieve a stabilized efficiency of 10.6%.
摘要:
A thin film solar cell (1) comprises: a back contact layer (2); an absorber layer (3) adjacent to the back contact layer and comprising an absorber material and a dopant; a buffer layer (4); a dopant barrier layer (5) between the absorber layer and the buffer layer; and a window layer (6) adjacent to the buffer layer.
摘要:
A method for manufacturing a thin-film solar cell including the follow processes is provided. First, a substrate is provided Then, a first conductive layer is formed on the substrate. Afterward, a first photovoltaic layer is formed on the first conductive layer. Then, the first photovoltaic layer is processed by a stabilized process, so as to reduce the light induced degradation as the first photovoltaic layer is illuminated. The material of the first photovoltaic layer is an amorphous semiconductor material. Later, a second photovoltaic layer is formed on the first photovoltaic layer, Then, a second conductive layer is formed on the second photovoltaic layer. A thin-film solar cell is also provided.
摘要:
To provide a transparent conductive film substrate, which is less likely to lead to a leak of an electric current by the concentration of an electric field, and which is less likely to lead to deterioration of the photoelectric conversion performance, when applied to a photoelectric conversion device such as a solar cell, and which further has a high light transmittance, and a solar cell using this substrate. A transparent conductive film substrate for a photoelectric conversion device, comprising a first oxide structural layer, a second oxide layer and a conductive oxide layer formed in this order on a glass substrate, wherein on the first oxide structural layer, a plurality of ridges protruding from the surface of the glass substrate are provided, and the height of the ridges from the surface of the glass substrate is at least 200 nm and at most 2,000 nm; and where the average value of angles of dent portions such that the depth of a dent between adjacent ridges among the plurality of the ridges is at least 20% of the average height of the first oxide structural layer, is A 1 , and the average value of angles of dent portions of the second oxide layer formed on a region on the dent portions, is A 2 , A 2 /A1 is at least 1.1.
摘要:
A thin film solar cell including a first substrate, a first electrode on the first substrate, an upper surface of the first electrode having a plurality of irregularities, an absorption layer on the first electrode, the absorption layer including amorphous silicon layers and microcrystal silicon layers contacting the first electrode at an angle relative to the first substrate, a second electrode on the absorption layer, and a second substrate on the second electrode.
摘要:
The invention describes a process and apparatus for making a photovoltaic device in a continuous roll to roll process. The fabrication apparatus in accordance with the present invention is quite novel and non-obvious and provides capital efficiency and advantages in processing for thin film solar cells.
摘要:
In a method of manufacturing a silicon-based thin film photoelectric converter, a crystalline photoelectric conversion layer included in the photoelectric converter is deposited by plasma CVD under the following conditions: the temperature of the underlying film is at most 550°C; a gas introduced into a plasma reaction chamber has a silane-based gas and a hydrogen gas where the flow rate of the hydrogen gas relative to the silane-based gas is at least 50 times larger; the pressure in the plasma reaction chamber is set to 3Torr; and the deposition speed is 17nm/min in the thickness-wise direction.