公开(公告)号：EP2938759A1

公开(公告)日：2015-11-04

申请号：EP13817700.1

申请日：2013-12-31

申请人： MEMC Electronic Materials S.p.A.

发明人： HARINGER, Stephan ,  GIANNATTASIO, Armando ,  SCALA, Roberto ,  BONANNO, Luigi ,  MOSER, Valentino

IPC分类号： C30B15/04 ,  C30B29/06

CPC分类号： C30B15/04 ,  C30B29/06 ,  Y10T117/1056

摘要： A doping system for introducing liquid dopant into a melt of semiconductor or solar-grade material includes a dopant reservoir for holding dopant and a feeding tube. The dopant reservoir includes a body and a tapered end defining an opening having a smaller cross-sectional area than a cross-sectional area of the body. The feeding tube includes a first end extending from the opening of the reservoir, a second end distal from the first end, an angled tip disposed at the second end of the feeding tube, a first restriction for inhibiting the passage of solid dopant through the feeding tube, and a second restriction for controlling the flow of liquid dopant, the second restriction disposed near the second end of the feeding tube.

公开(公告)号：EP2099073B1

公开(公告)日：2015-07-29

申请号：EP09003141.0

申请日：2009-03-04

申请人： SUMCO CORPORATION

发明人： Kurita, Kazunari ,  Omote, Shuichi

IPC分类号： H01L27/146 ,  C30B15/04 ,  C30B15/20 ,  C30B29/06 ,  C30B33/02

CPC分类号： H01L27/14689 ,  C30B15/04 ,  C30B15/20 ,  C30B29/06 ,  C30B33/02 ,  H01L27/14698

公开(公告)号：EP2893058A1

公开(公告)日：2015-07-15

申请号：EP13774828.1

申请日：2013-09-03

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： GARANDET, Jean-Paul ,  CHAINTREUIL, Nicolas ,  FASIELLO, Annalaura ,  PILAT, Eric ,  VESCHETTI, Yannick

IPC分类号： C30B15/04 ,  C30B29/06 ,  H01J31/14 ,  H01J31/18 ,  H01L31/042

CPC分类号： H01L31/047 ,  C30B15/04 ,  C30B29/06 ,  H01L31/0288 ,  H01L31/03529 ,  H01L31/068 ,  H01L31/0687 ,  H01L31/1804 ,  H01L31/1876 ,  Y02E10/547 ,  Y02P70/521

摘要： The present invention relates to a method for manufacturing a monolithic silicon wafer (10) comprising multiple vertical junctions (2) having an alternation of n-doped areas and p-doped areas, including at least the steps of: (i) providing a liquid bath (100) including silicon, at least one n-type doping agent and at least one p-type doping agent; (ii) proceeding to directionally solidify the silicon in a direction (I), varying the convection-diffusion parameters thereof in order to alternate the growth of n-doped silicon layers (101) and p-doped silicon layers (102); and (iii) cutting a slice (104), parallel to the direction (I), of the multi-layer structure obtained at the end of the step (ii), such as to obtain said expected wafer (10).

公开(公告)号：EP2843026A1

公开(公告)日：2015-03-04

申请号：EP13781483.6

申请日：2013-04-18

申请人： Koha Co., Ltd. ,  National Institute for Materials Science

发明人： WATANABE, Makoto ,  INOMATA, Daisuke ,  AOKI, Kazuo ,  SHIMAMURA, Kiyoshi ,  GARCIA VILLORA, Encarnacion Antonia

IPC分类号： C09K11/80 ,  C09K11/08 ,  C30B15/04 ,  C30B29/28 ,  H01L33/50

CPC分类号： C09K11/7774 ,  C30B15/00 ,  C30B15/04 ,  C30B29/28 ,  H01L33/501 ,  H01L33/502 ,  H01L33/505 ,  H01L33/507 ,  H01L2224/13 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/12044 ,  H01L2933/0041 ,  H01L2924/00014 ,  H01L2924/00

摘要： One purpose of the invention is to provide a phosphor with excellent quantum efficiency, a method for manufacturing the same, and a light-emitting device that uses this phosphor. One embodiment provides a phosphor comprising monocrystals with YAG crystals as a matrix, the quantum efficiency of the phosphor at 25°C being 92% or higher at an excitation light wavelength of 460 nm.

摘要翻译： 本发明的一个目的是提供一种具有优异的量子效率的荧光体及其制造方法，以及使用该荧光体的发光装置。 一个实施方案提供了包含以YAG晶体为基体的单晶的荧光体，在激发光波长为460nm时，25℃下的荧光体的量子效率为92％以上。

公开(公告)号：EP1897977B1

公开(公告)日：2015-01-21

申请号：EP05811258.2

申请日：2005-12-01

申请人： SUMCO Corporation

发明人： INAMI, Shuichi c/o SUMCO CORPORATION ,  TAKASE, Nobumitsu c/o SUMCO CORPORATION ,  KOGURE, Yasuhiro c/o SUMCO CORPORATION ,  HAMADA, Ken c/o SUMCO CORPORATION ,  NAKAMURA, Tsuyoshi c/o SUMCO CORPORATION

IPC分类号： C30B29/06 ,  C30B15/00 ,  C30B15/04 ,  C30B15/14

CPC分类号： C30B29/06 ,  C30B15/04 ,  C30B15/14

公开(公告)号：EP2276878B1

公开(公告)日：2014-11-19

申请号：EP09776890.7

申请日：2009-06-30

申请人： Freiberger Compound Materials GmbH

发明人： KRETZER, Ulrich ,  BÖRNER, Frank ,  EICHLER, Stefan ,  KROPFGANS, Frieder

IPC分类号： C30B29/42 ,  C30B15/04 ,  C30B11/00

CPC分类号： C30B11/02 ,  C30B11/00 ,  C30B11/04 ,  C30B15/04 ,  C30B29/42

公开(公告)号：EP2697412A4

公开(公告)日：2014-09-03

申请号：EP12771909

申请日：2012-04-13

申请人： GT ADVANCED CZ LLC

发明人： JOHNSON BAYARD K ,  DELUCA JOHN P ,  LUTER WILLIAM L

IPC分类号： C30B15/04 ,  C30B15/00 ,  C30B15/12 ,  C30B15/20 ,  C30B29/06 ,  H01L31/042 ,  H01L31/18

CPC分类号： C30B15/04 ,  C30B15/002 ,  C30B15/12 ,  C30B29/06 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521 ,  Y10T117/1052 ,  Y10T117/1056

摘要： A Czochralski growth system is disclosed comprising a crucible, a silicon delivery system comprising a feeder having a delivery point overhanging the crucible and delivering a controllable amount of silicon into the crucible, and at least one doping mechanism controllably delivering at least one dopant material to the feeder. The system can comprise two or more doping mechanisms each loaded with a different dopant material and can therefore be used to prepare silicon ingots having multiple dopants. The resulting ingots have substantially constant dopant concentrations along their axes. Also disclosed is a method of Czochralski growth of at least one silicon ingot comprising at least one dopant material, which is preferably a continuous Czochralski method.

公开(公告)号：EP2611952A2

公开(公告)日：2013-07-10

申请号：EP11822675.2

申请日：2011-09-01

申请人： GT Advanced CZ LLC

发明人： DELUCA, John, P. ,  DELK, Frank, S. ,  JOHNSON, Bayard, K. ,  LUTER, William, L. ,  MIDDENDORF, Neil, D. ,  WILLIAMS, Dick, S. ,  OSTROM, Nels, Patrick ,  HIGHFILL, James, N.

IPC分类号： C30B15/04 ,  C30B29/06 ,  H01L31/042

CPC分类号： C30B15/04 ,  C30B15/002 ,  C30B29/06

摘要： A doped silicon single crystal having a resistivity variation along a longitudinal and/or radial axis of less than 10% and a method of preparing one or a sequential series of doped silicon crystals is disclosed. The method includes providing a melt material comprising silicon into a continuous Czochralski crystal growth apparatus, delivering a dopant, such as gallium, indium, or aluminum, to the melt material, providing a seed crystal into the melt material when the melt material is in molten form, and growing a doped silicon single crystal by withdrawing the seed crystal from the melt material. Additional melt material is provided to the apparatus during the growing step. A doping model for calculating the amount of dopant to be delivered into the melt material during one or more doping events, methods for delivering the dopant, and vessels and containers used to deliver the dopant are also disclosed.

公开(公告)号：EP1895026B1

公开(公告)日：2013-06-19

申请号：EP05782038.3

申请日：2005-09-12

申请人： SUMCO Corporation

发明人： INAMI, Shuichi, c/o SUMCO CORPORATION ,  MURAKAMI, Hiroki, c/o SUMCO CORPORATION ,  TAKASE, Nobumitsu, c/o SUMCO CORPORATION ,  HAMADA, Ken, c/o SUMCO CORPORATION ,  NAKAMURA, Tsuyoshi, c/o SUMCO CORPORATION

IPC分类号： C30B15/14 ,  C30B15/04 ,  C30B29/06

CPC分类号： C30B15/14 ,  C30B15/04 ,  C30B29/06

公开(公告)号：EP2465625B1

公开(公告)日：2013-05-29

申请号：EP11192279.5

申请日：2011-12-07

申请人： Wacker Chemie AG

发明人： Schantz, Matthaeus ,  Lichtenegger, Bruno

IPC分类号： B23B27/10 ,  B23D59/02 ,  B23Q11/10 ,  B24B27/06 ,  C01B33/035 ,  C30B13/00 ,  C30B15/04 ,  C30B25/18 ,  C30B29/06 ,  B28D5/02

CPC分类号： B28D5/0076 ,  B23K26/0604 ,  B23K26/146 ,  B23K26/38 ,  B23K26/40 ,  B23K2203/50 ,  B28D5/029 ,  B28D5/045 ,  C01B33/035