公开(公告)号：EP1856740A4

公开(公告)日：2009-02-25

申请号：EP06718261

申请日：2006-01-12

Applicant: IBM

Inventor： CHIDAMBARRAO DURESETI

IPC: H01L29/00

CPC classification number: H01L29/7846 ,  H01L21/823807 ,  H01L21/823878 ,  H01L29/7842

Abstract: A semiconductor device structure includes a gate structure disposed on a portion of substrate, source and drain regions disposed adjacent to the portion so as to form a channel region in the portion, and trench isolation regions located immediately adjacent to the source and drain regions. At least portions of the trench isolation regions include stress materials such that the materials generate shear stresses in the channel region.

公开(公告)号：EP1899836A4

公开(公告)日：2009-01-14

申请号：EP06719073

申请日：2006-01-20

Applicant: IBM

Inventor： NARAYANASWAMI CHANDRASEKHAR ,  RAGNUNATH MANDAYAM THONDANUR

IPC: G06F15/16

CPC classification number: G06F9/4856 ,  G06F9/4406 ,  G06F9/45533

Abstract: A portable personal computing environment server comprises an interface for connecting to a host computer. The portable personal computing environment server also comprises a storage device storing a personal computing environment including one or more operating systems for restoring the personal computing environment in the host system.

公开(公告)号：EP1533952A4

公开(公告)日：2009-01-14

申请号：EP03736036

申请日：2003-06-04

Applicant: IBM

Inventor： SHIMIZU SHUICHI ,  NAKAMURA TAIGA

IPC: H04L12/70 ,  G06F17/00 ,  G06F17/30 ,  H04L12/18 ,  H04L12/803 ,  H04L12/951 ,  H04L29/06 ,  H04L12/56

CPC classification number: G06F17/30017 ,  H04L12/1836 ,  H04L12/1854 ,  H04L45/04 ,  H04L45/121 ,  H04L45/16 ,  H04L67/42

Abstract: A digital content delivery system, a digital content delivery method, a program for executing the method, a computer-readable recording medium storing thereon the program, and a server and a client for it. The digital content delivery system delivers a digital content via a first network (12) and a second network (22). A server (14) is connected to the first network (12), and clients (20) each of which receives a digital content and displays or reproduces it are connected to the second network (22). The server (14) divides a digital content it has into a plurality of packets and sends the packets, which are minimum units for configuring the digital content, to the second network (22). Each of the clients (20) includes means for allowing the client (20) to hold a digital content using the packets, which are minimum units, received by the client (20) from the server (14) and the packets received from another client of the second network.

公开(公告)号：EP1665275A4

公开(公告)日：2008-12-24

申请号：EP04821590

申请日：2004-08-25

Applicant: IBM

Inventor： KIRIHATA TOSHIAKI

IPC: G11C7/00 ,  G11C7/12 ,  G11C7/14 ,  G11C11/405 ,  G11C11/4094 ,  G11C11/4099

CPC classification number: G11C11/405 ,  G11C7/12 ,  G11C7/14 ,  G11C11/4094 ,  G11C11/4099

Abstract: A dynamic random access memory (DRAM) storage device includes a storage cell having a plurality of transistors arranged in a gain cell configuration, the gain cell coupled to a read bitline and a write bitline. A dummy cell is configured as a clamping device for the read bitline, wherein the dummy cell opposes a read bitline voltage swing during a read operation of the storage cell.

公开(公告)号：EP1360641A4

公开(公告)日：2008-12-24

申请号：EP01985991

申请日：2001-11-19

Applicant: IBM

Inventor： MITCHELL JONA L ,  PRAKASH RAVINDER ,  STEPNESKI DAVID

IPC: H04N1/413 ,  H04N7/30 ,  H04N1/41

CPC classification number: H04N19/98 ,  H04N19/126 ,  H04N19/14 ,  H04N19/176 ,  H04N19/18 ,  H04N19/40 ,  H04N19/46 ,  H04N19/60

Abstract: Increased and potentially extreme compression of documents is achieved by reducing/remapping the dynamic range (140) of the document image possibly together with further image analysis (110) and pre-processing (120) and storing the document with a substitute table to restore dynamic range (170) of the document image. Such increased compression allow document images to be maintained in rapid-access memory for extended periods without increased storage costs.

公开(公告)号：EP1770909A4

公开(公告)日：2008-12-10

申请号：EP05766166

申请日：2005-07-19

Applicant: IBM

Inventor： KAMIJO NOBORU ,  AIHARA TORU ,  OCHIAI KAZUMASA

IPC: H04L12/28 ,  H04L12/14 ,  H04L29/06 ,  H04M3/42 ,  H04Q7/20

CPC classification number: H04L12/2859 ,  H04L12/14 ,  H04L12/1471 ,  H04L12/2898

Abstract: [PROBLEMS] To safely provide only unused band of a communication line contractor to a third person for free. [MEANS FOR SOLVING PROBLEMS] A communication device (20) radio-communicates with each of information processing devices and connects each of the information processing devices to a communication line provided by an ISP (Internet service provider). The communication device (20) includes: a contractor terminal judgment unit (200) for judging whether each of the information processing devices is managed by an ISP contractor who is allowed to install the communication device and connect it to the communication terminalaccording to the contract with the ISP; and a communication unit (210) for radio-communicating with each of the information processing devices by setting the contractor terminal as an information processing device managed by the contractor with a higher priority than a non-contractor terminal as an information processing device which is not a contractor terminal.

公开(公告)号：EP1547133A4

公开(公告)日：2008-11-26

申请号：EP03754842

申请日：2003-09-23

Applicant: IBM ,  INFINEON TECHNOLOGIES CORP

Inventor： NING XIAN J ,  WONG KEITH KWONG HON

IPC: H01L21/02 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L23/5223 ,  H01L21/31604 ,  H01L21/76807 ,  H01L28/55 ,  H01L28/60 ,  H01L28/86 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metal-insulator-metal (MIM) capacitor (242/252) structure and method of forming the same. A dielectric layer (214) of a semiconductor device (200) is patterned with a dual damascene pattern having a first pattern (216) and a second pattern (218). The second pattern (218) has a greater depth than the first pattern (216). A conductive layer (226) is formed over the dielectric layer (214) in the first pattern, and a conductive layer is formed over the conductive layer in the first pattern (216). A dielectric layer (232), conductive layer (234), dielectric layer (236) and conductive layer (238) are disposed over the conductive layer (226) of the second pattern (218). Conductive layer (234), dielectric layer (232) and conductive layer (226) form a first MIM capacitor (252). Conductive layer (238), dielectric layer (236) and conductive layer (234) form a second MIM capacitor (242) parallel to the first MIM capacitor (242).

公开(公告)号：EP1807875A4

公开(公告)日：2008-11-19

申请号：EP05725271

申请日：2005-03-10

Applicant: IBM

Inventor： BIERY GLENN A ,  STEEN MICHELLE L

IPC: H01L31/062 ,  H01L31/119

CPC classification number: H01L29/6656 ,  H01L21/823425 ,  H01L21/823443 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/78

Abstract: An advanced gate structure that includes a fully silicided metal gate (30) and silicided source and drain regions (32) in which the fully silicided metal gate has a thickness that is greater than the thickness of the silicided source/drain regions is provided. Methods of forming the advanced gate structure are also provided.

公开(公告)号：EP1662850A4

公开(公告)日：2008-10-22

申请号：EP04771846

申请日：2004-08-19

Applicant: IBM

Inventor： OHSUMI KOHICHI ,  KOBAYASHI KAORU

IPC: H05K3/46 ,  H05K3/00 ,  H05K3/10 ,  H05K3/28 ,  H05K3/42

CPC classification number: H05K3/426 ,  H05K3/0094 ,  H05K3/108 ,  H05K3/427 ,  H05K3/4602 ,  H05K2201/0347 ,  H05K2201/0959 ,  H05K2201/096 ,  H05K2203/1461 ,  Y10T29/49155 ,  Y10T29/49165

Abstract: [PROBLEMS] A printed wiring board having a through hole conductor is disclosed which can be manufactured by both subtractive process and additive process. [MEANS FOR SOLVING PROBLEMS] A printed wiring board (100) comprises a through hole conductor (6) which is formed on the surface of a through hole (5) formed in a copper-clad laminate (1) and on a part of the surface of the copper-clad laminate (1) surrounding the opening of the through hole (5). The through hole conductor (6) is filled with a positive photosensitive resin (7), and a lid conductor (8) is formed on top of the positive photosensitive resin (7) and the through hole conductor (6). A circuit pattern (14) is formed on the surface of the copper-clad laminate (1). An insulating layer (3) is formed over the upper surface of the copper-clad laminate (1), the lid conductor (8) and the circuit pattern (14), and a via hole (16) is so formed in the insulating layer (3) as to range from the surface of the layer (3) to the lid conductor (8). A via conductor (10) is formed in the via hole (16) and on a part of the surface of the insulating layer (3) surrounding the opening of the via hole (16).

公开(公告)号：EP1695381A4

公开(公告)日：2008-09-17

申请号：EP03796637

申请日：2003-12-04

Applicant: IBM

Inventor： DOKUMACI OMER H ,  RONSHEIM PAUL

IPC: H01L21/8242 ,  H01L21/225 ,  H01L21/265 ,  H01L21/28 ,  H01L21/336 ,  H01L29/10 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01L29/6659 ,  H01L21/2254 ,  H01L21/2255 ,  H01L21/26513 ,  H01L21/28114 ,  H01L29/1083 ,  H01L29/42376 ,  H01L29/665 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/785

Abstract: A method for forming a semiconductor device includes defining a sacrificial layer (108) over a single crystalline substrate (106). The sacrificial layer (108) is implanted with a dopant species in a manner that prevents the single crystalline substrate (106) from becoming substantially amorphized. The sacrificial layer (108) is annealed so as to drive said dopant species from said sacrificial layer (108) into said single crystalline substrate (106).