ULTRASONIC VIBRATION DEVICE, AND ULTRASONIC MEDICAL APPARATUS
    132.
    发明公开
    ULTRASONIC VIBRATION DEVICE, AND ULTRASONIC MEDICAL APPARATUS 有权
    超声波振动器

    公开(公告)号:EP2800400A1

    公开(公告)日:2014-11-05

    申请号:EP12862613.2

    申请日:2012-11-22

    发明人: ITO, Hiroschi

    摘要: There is provided an ultrasound transducer device 2 including a plurality of piezoelectric single-crystal plates 44a to 44f that are stacked such that polarization components thereof are alternately inverted. The plurality of piezoelectric single-crystal plates 44a to 44f are stacked such that directions thereof in which strain deformation in a direction orthogonal to a direction of voltage application from electrodes 45a, 45b respectively interposed between the plurality of piezoelectric single-crystal plates becomes largest coincide with each other. There is also provided an ultrasound medical apparatus 1 including the ultrasound transducer device 2.

    摘要翻译: 提供了包括多个压电单晶板44a至44f的超声波换能器装置2,这些压电单晶板44a至44f被堆叠,使得其偏振分量交替倒置。 多个压电单晶片44a至44f堆叠成使得在与多个压电单晶板之间分别插入的电极45a,45b的与施加电压的方向正交的方向上的应变变形变得最大的方向成为最大的方向 与对方 还提供了包括超声波换能器装置2的超声波医疗装置1。

    PIEZOELECTRIC DEVICE, AND METHOD FOR MANUFACTURING PIEZOELECTRIC DEVICE
    134.
    发明公开
    PIEZOELECTRIC DEVICE, AND METHOD FOR MANUFACTURING PIEZOELECTRIC DEVICE 审中-公开
    压电器件及其制造方法的压电装置

    公开(公告)号:EP2688206A1

    公开(公告)日:2014-01-22

    申请号:EP12756931.7

    申请日:2012-03-12

    发明人: IWAMOTO Takashi

    摘要: Provided are a piezoelectric device that prevents oxidation of an extremely thin piezoelectric thin film and thereby prevents damage to electrodes formed on the piezoelectric thin film by pyroelectric charge and a method for manufacturing such a piezoelectric device. A silicon oxide film (90) is deposited on a surface (12) of a single-crystal piezoelectric substrate (1) closer to an ion-implanted region (100) by sputtering, and a silicon nitride film (91) is deposited on a surface of the dielectric film (90) opposite the side thereof closer to the single-crystal piezoelectric substrate (1) by sputtering. The silicon oxide film (90) has a composition that is deficient in oxygen relative to the stoichiometric composition. Accordingly, little oxygen is supplied from the silicon oxide film (90) to the piezoelectric thin film (10) during heat treatment of a piezoelectric device (101). This prevents oxidation of the piezoelectric thin film (10) and therefore formation of an oxide layer with high resistivity in the piezoelectric thin film (10). As a result, a pyroelectric charge generated in the piezoelectric thin film (10) can flow to the silicon oxide film (90).

    摘要翻译: 本发明提供一种压电元件那样的极薄的压电薄膜的防止氧化,从而防止在形成于由热电电荷的压电体薄膜和用于制造压电装置搜索的方法的电极的损坏。 的氧化硅膜 - (90)沉积的单晶压电基片(1)更接近的表面(12)上,以通过溅射离子注入区(100),和氮化硅膜 - (91)沉积在 侧通过溅射其接近单晶压电基片(1)相对的所述电介质膜 - (90)的表面上。 该氧化硅膜 - (90)具有一组合物所做的是在相对于化学计量组成的氧不足。 因此,小的氧从氧化硅膜 - (90)的压电薄膜(10)的压电元件(101)的热处理期间提供。 这防止了压电薄膜(10),并因此与在压电薄膜(10),高电阻率形成的氧化物层的氧化。 其结果是,在压电薄膜(10)产生的热电电荷可流入到氧化硅膜 - (90)。

    Dielektrisches Elastomer auf Fluorosilicon-Basis und Verfahren zu seiner Herstellung
    135.
    发明公开
    Dielektrisches Elastomer auf Fluorosilicon-Basis und Verfahren zu seiner Herstellung 审中-公开
    消除弹性体氟化硅基础和Verfahren zu seiner Herstellung

    公开(公告)号:EP2645375A1

    公开(公告)日:2013-10-02

    申请号:EP13158054.0

    申请日:2013-03-06

    IPC分类号: H01B3/46 C08G77/24 H01L41/04

    摘要: Die vorliegende Erfindung betrifft ein Dielektrisches Elastomer, umfassend eine Folie, die ein fluoriertes Siliconelastomer enthält oder daraus besteht, sowie beidseitig der Folie eine Beschichtung aus einem dehnbaren Elektrodenmaterial, oder bestehend aus diesen Komponenten, dadurch gekennzeichnet, dass das fluorierte Siliconelastomer einen E-Modul von maximal 450 mPa besitzt. Dieser E-Modul kann in bevorzugter Weise dadurch erzielt werden, dass das fluorierte Siliconelastomer ein dreidimensional vernetztes fluoriertes, alkylgruppenhaltiges Polysiloxan in Kombination mit einem fluorierten Siliconöl aufweist und/oder dass das fluorierte Siliconelastomer ein dreidimensional weitmaschig vernetztes, fluoriertes, alkylgruppenhaltiges Polysiloxan aufweist, dessen Weitmaschigkeit durch eine Kettenverlängerung durch Addition eines zwei Si-H-Gruppen enthaltenden kettenförmigen Siliconmoleküls an ein Vinylgruppen enthaltendes Polysiloxanmoleküls bewirkt wurde.

    摘要翻译: 电介质弹性体包括含有不超过450kPa弹性模量的氟化硅氧烷弹性体的膜和存在于膜的两侧上的由可拉伸电极材料制成的涂层。 还包括以下独立权利要求:(1)包含上述介电弹性体的多层系统,其中至少一层双层,其包含由弹性模量不大于450kPa的氟化硅弹性体制成的另一层,以及 将由可拉伸电极材料制成的另外的涂层施加在由可拉伸电极材料制成的涂层之一上,使得由可拉伸电极材料制成的两个涂层通过氟化硅氧烷弹性体层彼此分离,并且副 反之亦然,其中由可拉伸电极材料制成的涂层交替地连接为正极和负极; (2)制备介电弹性体,包括(a)提供至少部分氟化的聚硅氧烷,其携带至少两个反应性基团,(b)提供至少部分氟化的硅烷或聚硅氧烷,其携带至少三个基团,其反应 在步骤(a)中提供的部分氟化聚硅氧烷的反应性基团,其中步骤(a)中提供的聚硅氧烷或步骤(b)中提供的硅烷或聚硅氧烷的分子量至少为10000g / 摩尔,(c)将步骤(a)中提供的聚硅氧烷,步骤(b)中提供的硅烷或聚硅氧烷,硅油和任选的催化剂混合,(d)进行在 步骤(c)在基材上,(e)使用光和/或热使混合物中的反应性基团反应和/或通过加入催化剂以形成稳定的膜,(f)从基底上除去膜,(g) 产生至少一种包含该材料的混合物 (g)中获得的混合物和(g)的步骤(g)中制备的相同的混合物或不同的混合物(g ),和(i)使用光和/或热和/或加热催化剂使混合物中的反应性基团反应,或步骤(a),步骤(b),(c1) 至少部分氟化的硅烷或聚硅氧烷,其不具有两个基团,其与步骤(a)中提供的部分氟化聚硅氧烷的反应性基团反应,其中步骤(a),(b)或(c1)中提供的聚硅氧烷 )表现出至少10000g / mol的分子量,(d1)混合步骤(a)中提供的聚硅氧烷,步骤(b)中提供的硅烷或聚硅氧烷,步骤(B)中提供的硅烷或聚硅氧烷 c1)和任选的催化剂(e1)将在步骤(d1)中获得的混合物分层施加在基材上,(f1) 使用光和/或加热和/或通过添加催化剂以形成稳定的膜来净化混合物中的反应性基团(g1)从基材中除去膜,(h1)产生至少一种混合物,其包含在 步骤(d1)和导电粉末,(i1)将在步骤(h1)中获得的混合物施加在薄膜一侧,并将与步骤(h1)中制备的相同的混合物或不同的混合物施加在另一个上 (k1)使用光和/或热和/或通过加入催化剂使混合物中的反应性基团反应。

    Nano-piezoelectric generator and method of manufacturing the same
    136.
    发明公开
    Nano-piezoelectric generator and method of manufacturing the same 有权
    纳米压电发电机及其制造方法

    公开(公告)号:EP2631960A2

    公开(公告)日:2013-08-28

    申请号:EP13151703.9

    申请日:2013-01-17

    摘要: A nano-piezoelectric generator (100) includes a first electrode (120) and a second electrode (150), at least one nano-piezoelectric unit (140), formed of a semiconductor piezoelectric material having a nano-structure, disposed between the first (120)and the second electrodes (150), and an interlayer (130), formed of an insulating material, disposed between the first electrode (120) and the at least one nano-piezoelectric unit (140).

    摘要翻译: 纳米压电发生器(100)包括第一电极(120)和第二电极(150);至少一个纳米压电单元(140),由具有纳米结构的半导体压电材料形成,设置在第一电极 (120)和所述第二电极(150)之间;以及中间层(130),其由绝缘材料形成,设置在所述第一电极(120)与所述至少一个纳米压电单元(140)之间。

    Piezoelectric device, dust removing apparatus, and imaging apparatus
    137.
    发明公开
    Piezoelectric device, dust removing apparatus, and imaging apparatus 审中-公开
    Piezoelektrische Vorrichtung,Staubentfernungsvorrichtung und Abbildungsvorrichtung

    公开(公告)号:EP2584622A2

    公开(公告)日:2013-04-24

    申请号:EP12189196.4

    申请日:2012-10-19

    摘要: A piezoelectric device (5) includes an elastic member (1), an electrical-mechanical energy conversion element (2) fixed to the elastic member (1), configured to cause the elastic member (1) to generate vibration, and a supporting member (3) that supports the elastic member (1). The electrical-mechanical energy conversion element (2) is formed of a piezoelectric material in which, in a usage temperature range of the piezoelectric device (5), a piezoelectric constant decreases along with temperature rise. A supporting member (3) that supports the elastic member (1) is formed of a material in which, in the usage temperature range of the piezoelectric device (5), Q value increases along with temperature rise.

    摘要翻译: 压电装置(5)包括弹性构件(1),固定到弹性构件(1)的机电能转换元件(2),其构造成使弹性构件(1)产生振动;支撑构件 (3),其支撑弹性构件(1)。 机电能转换元件(2)由压电材料形成,其中在压电器件(5)的使用温度范围内,压电常数随温度升高而降低。 支撑弹性构件(1)的支撑构件(3)由在压电装置(5)的使用温度范围内随着温度升高Q值增加的材料形成。

    PIEZOELECTRIC DEVICE
    139.
    发明授权
    PIEZOELECTRIC DEVICE 有权
    压电元件

    公开(公告)号:EP1703571B1

    公开(公告)日:2011-10-05

    申请号:EP04807733.3

    申请日:2004-12-24

    发明人: OGAWA, Toshio

    摘要: The present invention provides a piezoelectric device having an extremely good secular characteristic, which is a unimorph (or bimorph) element obtained by sticking to a metal plate a piezoelectric single crystal having a giant-lateral-effect piezoelectric performance of a lateral-vibration-mode electromechanical coupling factor k 31 not smaller than 70%, the unimorph (or bimorph) element having a bending-vibration-mode electromechanical coupling factor k b not smaller than 50 % (or 60 %). A plate-form single crystal 10 of PZNT or PMNT is brought into a mono-domain in its thickness direction and in its plate surface so as to be provided with the giant-lateral-effect piezoelectric characteristic, and the single crystal 10 that does not cause secular deterioration is stuck to a metal plate 20 (shim plate) while the mono-domain quality is kept as it is, as a result of which a unimorph 1 (or bimorph 2) is fabricated.