公开(公告)号：EP1695481A1

公开(公告)日：2006-08-30

申请号：EP04804621.3

申请日：2004-11-30

Applicant: International Business Machines Corporation ,  Compagnie IBM France

Inventor： DENECHEAU, Lionel ,  ESTEVE, Denis ,  SICSIC, Patrick

IPC: H04L12/18 ,  H04L12/42 ,  H04L12/433

CPC classification number: H04L12/1854 ,  H04L12/4641

Abstract: The present invention is directed to a system, method, computer program in a node within a network comprising a transport layer protocol providing end to end data transfer, for multicasting datagrams on a virtual ring, each node on the virtual ring being logically connected according to the network transport layer protocol to two and only two neighbor nodes through virtual connections, an upstream neighbor node and a downstream neighbor node. The method comprises the steps of: • sending a virtual ring datagram to the downstream neighbor node on the virtual ring; said virtual ring datagram comprising a virtual ring identifier, means for identifying the node originator of the virtual ring datagram, and data; receiving a token, identifying the virtual ring and forwarding the token to the downstream neighbor node on the identified virtual ring; if the received datagram is a virtual ring datagram: identifying the virtual ring and checking the node originator of the received virtual ring datagram; if the received virtual ring datagram has not been locally originated: • processing data comprised in said virtual ring datagram; • forwarding said virtual ring datagram to the downstream neighbor node on the identified virtual ring; if the received virtual ring datagram has been locally originated: removing the virtual ring datagram from the virtual ring.

公开(公告)号：EP1546813A4

公开(公告)日：2006-08-30

申请号：EP03815294

申请日：2003-09-11

Applicant: IBM

Inventor： KHOJASTEH MAHMOUD M ,  WONG RANEE W ,  CHEN KUANG-JUNG ,  VARANASI PUSHKARA RAO ,  ALLEN ROBERT D ,  BROCK PHILLIP ,  HOULE FRANCES ,  SOORIYAKUMARAN RATNAM

IPC: G03F7/38 ,  G03F7/039 ,  G03F7/075 ,  G03F7/09

CPC classification number: G03F7/094 ,  G03F7/0397 ,  G03F7/0758 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115

Abstract: The silicon-containing resist compositions which have low silicon outgassing and high resolution lithographic performance, especially in bilayer or multilayer lithographic applications using 193 nm or shorter wavelength imaging radiation are enabled by the presence of an imaging polymer having silicon-containing, non-acid-labile pendant groups. The resist compositions of the invention are preferably further characterized by the substantial absence of silicon-containing acid-labile moieties.

公开(公告)号：EP1687705A2

公开(公告)日：2006-08-09

申请号：EP04798160.0

申请日：2004-11-04

Applicant: International Business Machines Corporation ,  Compagnie IBM France

Inventor： CHEN, James C. ,  HUYNH, Minh-Ngoc L. ,  KALOS, Matthew J. ,  FUNG, Chung M.

IPC: G06F3/06

CPC classification number: G06F3/065 ,  G06F3/0611 ,  G06F3/067 ,  G06F3/0689 ,  H04L47/10

Abstract: Methods, system and computer program product are provided to improve, the efficiency of data transfers in a PPRC environment. Any or all of three features may be implemented, each of which reduces the number of round trips required for the exchange of handshaking, data and control information. A first feature includes disabling the 'transfer ready' acknowledgment which normally occurs between a primary storage controller and a secondary storage controller. A second feature includes pre-allocating payload and data buffers in the secondary storage controller. A third feature includes packaging write control information with a write command in an extended command descriptor block (CDB). Such a step eliminated the need for a separate transmission of the write control information. The CDB is transmitted along with a data block from the primary storage controller to the secondary storage controller and placed in the respective, pre-allocated buffers. Data may also be pipelined to the secondary. By decreasing the response time for data transfers, the distance separating the primary and secondary storage controllers may be increased.

公开(公告)号：EP1438666A4

公开(公告)日：2006-06-28

申请号：EP02776041

申请日：2002-09-26

Applicant: IBM

Inventor： LARY RICHARD A ,  BAX DANIEL H

IPC: G06F15/17 ,  G06F9/22 ,  G06F11/273 ,  G06F12/06 ,  G06F13/16 ,  G06F13/42 ,  G06F13/00 ,  G06F12/00

CPC classification number: G06F13/4239

Abstract: Non-volatile memory access, such as firmware by a service processor (226), is disclosed. The service processor asserts a control signal to select either a first non-volatile memory (230), or a second non-volatile memory (212). The first non-volatile memory is located behind a first bridge controller (204) and is otherwise accessible by the service processor. The second non-volatile memory is located behind a second bridge controller (202) and is otherwise accessible only by a processor (206) other than the service processor. The service processor then accesses the selected non-volatile memory, via a bus (308) communicatively coupled to both the non-volatile memories.

公开(公告)号：EP1430536A4

公开(公告)日：2006-04-26

申请号：EP02796462

申请日：2002-08-29

Applicant: IBM

Inventor： FURUKAWA TOSHIHARU ,  HAKEY MARK C ,  HOLMES STEVEN J ,  HORAK DAVID V ,  LEAS JAMES M ,  MA WILLIAM H L ,  RABIDOUX PAUL A

IPC: H01L21/336 ,  H01L21/60 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/78 ,  H01L29/786 ,  H01L29/76 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/8238 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113

CPC classification number: H01L29/78642 ,  H01L21/2255 ,  H01L21/76897 ,  H01L21/823487 ,  H01L27/088 ,  H01L29/66666 ,  H01L29/7827 ,  H01L29/7831

Abstract: A vertical transistor particularly suitable for high density integration includes potentially independent gate structures (3230) o opposite sides of a semiconductor pillar (2910) formed by etching in a trench. The gate structure is surrounded by insulting material (2620) which is selectively etchable to isolation material surrounding the transistor. A contact (3820) is made to the lower end of the pillar by selectively etching the isolation material selective to the insulating material. The upper end of the pillar is covered by a cap (2730) and sidewalls of selectively etchable materials so that gate and source connection openings (3720, 3620) can also be made by selective etching with good registration tolerance.

公开(公告)号：EP1639637A1

公开(公告)日：2006-03-29

申请号：EP04741667.2

申请日：2004-05-27

Applicant: International Business Machines Corporation ,  Compagnie IBM France

Inventor： DORIS, Bruce ,  GUARINI, Kathryn ,  LEONG, MeiKei ,  NARASIMHA, Shreesh ,  RIM, Kern ,  SLEIGHT, Jeffrey, W. ,  YANG, Min

IPC: H01L21/8238 ,  H01L21/84

CPC classification number: H01L21/76275 ,  H01L21/823807 ,  H01L21/84

Abstract: An integrated semiconductor structure containing at least one device formed upon a first crystallographic surface that is optimal for that device, while another device is formed upon a second different crystallographic surface that is optimal for the other device is provided. The method of forming the integrated structure includes providing a bonded substrate including at least a first semiconductor layer of a first crystallographic orientation and a second semiconductor layer of a second different crystallographic orientation. A portion of the bonded substrate is protected to define a first device area, while another portion of the bonded substrate is unprotected. The unprotected portion of the bonded substrate is then etched to expose a surface of the second semiconductor layer and a semiconductor material isregrown on the exposed surface. Following planarization, a first semiconductor device is formed in the first device region and a second semiconductor device is formed on theregrown material.

公开(公告)号：EP1625413A1

公开(公告)日：2006-02-15

申请号：EP03769408.0

申请日：2003-10-17

Applicant: International Business Machines Corporation ,  IBM DEUTSCHLAND GMBH

Inventor： GRIMM, Hubert

IPC: G01R33/18

CPC classification number: G01R33/18

Abstract: A method for directly measuring the magnetostriction constant of a magnetoresistive element is provided. The method consists of the following steps: 1) providing a substrate carrying one or more magnetoresistive elements; 2) inserting said substrate into a bending fixture; 3) applying a magnetic DC field parallel to said substrate; 4) applying a magnetic alternating field perpendicular to said substrate and parallel to the magnetoresistive layers of said elements; 5) measuring a signal from said element; 6) applying a mechanical stress parallel to said substrate by bending said substrate; and 7) changing said magnetic DC field until the signal measured before applying said mechanical stress is reached.

公开(公告)号：EP1010051A4

公开(公告)日：2006-02-01

申请号：EP98937921

申请日：1998-03-12

Applicant: IBM

Inventor： BIGUS JOSEPH PHILLIP ,  CRAGUN BRIAN JOHN ,  DELP HELEN ROXLO

IPC: G06F15/16 ,  G06F9/46 ,  G06F13/00 ,  G06N5/04 ,  G06F1/00

CPC classification number: G06N5/043

Abstract: The performance of a given task is optimized by utilizing an intelligent agent (42) having a plurality of program modules (42') suited to perform the computer task but having varied degrees of domain knowledge. Based upon an objective criteria that may be determined for a given situation, one or more of the program modules (42') in the intelligent agent (42) may be selected to perform the task, thereby optimizing the performance of the computer task for a wide variety of situations.

公开(公告)号：EP1369928A4

公开(公告)日：2006-01-11

申请号：EP01273779

申请日：2001-12-18

Applicant: IBM

Inventor： SUZUKI HIROSHI ,  SUEOKA KUNIAKI

IPC: H01L21/336 ,  H01L29/49 ,  H01L29/786 ,  G02F1/1368 ,  G09F9/30 ,  H01L21/3205

CPC classification number: H01L29/66757 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78603

Abstract: A thin-film transistor structure enabling a large display screen for high-definition display without causing any signal delay, a method for manufacturing a thin-film transistor structure, and a display device having the thin-film transistor structure. The thin-film transistor structure is so constructed that on a substrate (100) an insulating polymer film (101) having at least a trench (109) formed therein is formed, and the trench (109) formed in the insulating polymer film (101) houses a gate wiring (110) formed of a plurality of conductive layers. Further provided are a method for manufacturing the thin-film transistor structure having the aforementioned construction, and a display device including a TFT array having the thin-film transistor of that construction.

公开(公告)号：EP1097546B1

公开(公告)日：2005-12-21

申请号：EP99929590.0

申请日：1999-07-06

Applicant: International Business Machines Corporation ,  IBM United Kingdom Limited

Inventor： MCKAY, Danny c/o IBM UK Ltd ,  BAKER, Murray ,  SINHA, Rupam c/o IBM UK Ltd. ,  JEAN, Nelson ,  WONG, Daniel

IPC: H04L12/28 ,  H04L12/56 ,  H04L1/16

CPC classification number: H04W74/0816 ,  H04L1/1685 ,  H04L1/1806 ,  H04L2001/0093 ,  H04L2001/125 ,  H04W28/26 ,  H04W76/30 ,  H04W80/02

Abstract: A method is provided for communication between a plurality of stations in a communication network using media access protocol, in which medium access is granted to stations obtaining a successful reservation of the medium and in which data transmission verification is performed by the protocol within the reservation. In the method a station sends a request message on the communication medium for a reservation of the medium to a recipient station in the network. The recipient station sends a reservation confirmation message back to the sending station which receives it and responds to the reservation confirmation message by sending an ordered sequence of data frames to the recipient station. After sending the ordered sequence of data frames the sending station sends an end of transmission message to the recipient station, which replies by sending back an end of transmission confirmation identifying the number of frames received in their original sequence. If the number is not correct remedial action can be taken by the sending station to resend missing data. Address conflict resolution is also provided by another aspect of the invention. The invention has embodiments which handle unicast and groupcasting transmissions.