公开(公告)号：EP4331734A1

公开(公告)日：2024-03-06

申请号：EP23190778.3

申请日：2023-08-10

Applicant: STMicroelectronics S.r.l.

Inventor： FONCELLINO, Francesco

IPC: B06B1/06 ,  G01H11/08 ,  H10N30/30

Abstract: MEMS ultrasonic transducer, MUT, device (50), comprising a semiconductor body (53) with a first (53A) and a second (53B) main face, including: a modulation cavity (65) extending into the semiconductor body (53) from the second main face (53B); a membrane body (67) suspended on the modulation cavity (65) and comprising a transduction membrane body (78) and a modulation membrane body (68); a piezoelectric modulation structure (69) on the modulation membrane body (68); a transduction cavity (75) extending into the membrane body (67), the transduction membrane body (78) being suspended on the transduction cavity (75); and a piezoelectric transduction structure (79) on the transduction membrane body (78). The modulation membrane body (68) has a first thickness (S 1 ) and the transduction membrane body (78) has a second thickness (S 2 ) smaller than the first thickness (S 1 ). In use, the modulation membrane (73) vibrates at a first frequency and the transduction membrane (83) vibrates at a second frequency higher than the first frequency, to emit and/or receive acoustic waves at a frequency (f o ) dependent on the first and the second frequencies.

公开(公告)号：EP4326038A1

公开(公告)日：2024-02-21

申请号：EP23188320.8

申请日：2023-07-28

Applicant: STMicroelectronics S.r.l.

Inventor： ZAMPROGNO, Marco ,  FURCERI, Raffaele Enrico ,  GIANOLLO, Matteo ,  LANGFELDER, Giacomo

IPC: H10N30/80

Abstract: A differential piezoelectric actuator-system (10) includes an inductor (L) and driver-circuit (11, 12) having switches (S1-S6) for transferring energy between first and second actuators (PZT1, PZT2) and the inductor, and between a voltage-supply node (Vbatt) and the inductor. Control circuitry (21) determines whether a next phase in which to operate the driver-circuit is a first charging-phase or a first recovery-phase. The first charging-phase includes operating the switches in: a first sub-phase to transfer energy from the first actuator to the inductor; a second sub-phase to transfer energy from the voltage supply node to the inductor; and a third sub-phase to transfer energy from the inductor to the second actuator. The first recovery-phase includes operating the switches in: a first sub-phase to transfer energy from the first actuator to the inductor; a second sub-phase to transfer energy from the inductor to the voltage supply node; and a third sub-phase to transfer energy from the inductor to the second actuator.

公开(公告)号：EP4322410A1

公开(公告)日：2024-02-14

申请号：EP23188080.8

申请日：2023-07-27

Applicant: STMicroelectronics S.r.l.

Inventor： VERCESI, Federico ,  GATTERE, Gabriele ,  ALLEGATO, Giorgio ,  AZPEITIA URQUIA, Mikel ,  DANEI, Alessandro

IPC: H03K17/975

Abstract: A microelectromechanical button device (5) is provided with a detection structure (14) having: a substrate (22) of semiconductor material with a front surface (22a) and a rear surface (22b); a buried electrode (28) arranged on the substrate; a mobile electrode (32), arranged in a structural layer (30) overlying the substrate and elastically suspended above the buried electrode at a separation distance so as to form a detection capacitor (Cd); and a cap (46) coupled over the structural layer and having a first main surface (46a) facing the structural layer and a second main surface (46b) that is designed to be mechanically coupled to a deformable portion (3) of a case (2) of an electronic apparatus (1) of a portable or wearable type. The cap has, on its first main surface, an actuation portion (48) arranged over the mobile electrode and configured to cause, in the presence of a pressure applied on the second main surface, a deflection of the mobile electrode and its approach to the buried electrode, with a consequent capacitive variation of the detection capacitor, which is indicative of an actuation of the microelectromechanical button device.

公开(公告)号：EP4321969A1

公开(公告)日：2024-02-14

申请号：EP23186008.1

申请日：2023-07-18

Applicant: STMicroelectronics S.r.l.

Inventor： RIVOLTA, Stefano Paolo ,  MURA, Roberto

IPC: G06F1/3231 ,  G06F1/16

Abstract: The present disclosure is directed to pick-up state detection for an electronic device, such as a laptop. In a pick-up state, the device is picked or lifted up from a surface, such as a table. A power state of the device is adjusted in response to detecting the pick-up state. For example, the device is in a hibernate state while set on the table, and is switched to a working state in response to detecting the pick-up state.

公开(公告)号：EP4304087A1

公开(公告)日：2024-01-10

申请号：EP23178595.7

申请日：2023-06-12

Applicant: STMicroelectronics S.r.l.

Inventor： BOTTI, Edoardo ,  GONANO, Giovanni ,  RAIMONDI, Marco

IPC: H03K17/082 ,  H03F1/52 ,  H03F3/217

Abstract: A switching power stage comprising
at least a half bridge (11) comprising a respective high side switch (HSD) and low side switch (LSD) driven (12) by a PWM signal (PWMin), and
a cycle-by-cycle protection against over-currents circuit (15)
receiving said driving PWM signal (PWMin) and
configured to output a cycle-by-cycle protected driving signal (OutCBC) to drive said high side switch (HSD) and low side switch (LSD),
said cycle-by-cycle protection against over-currents circuit (15) receiving signals indicative of an over-currents (OcHsd, OcLsd) detected at said high side switch (HSD) and low side switch (LSD),
said cycle-by-cycle protection against over-currents circuit (15) being configured to output said cycle-by-cycle protected driving signal (OutCBC) as inverted driving PWM signal (PWMin) if, during the time interval in which one of the high side switch (HSD) or low side switch (LSD) is on, the signals indicative of an over-current (OcHsd, OcLsd) indicate that the current flowing in such switch crosses a give threshold (II), turning off the one of the high side switch or low side switch which is on, else the driving PWM signal (PWMin) is outputted not inverted,
wherein said power stage (10) further comprises an anomaly detection circuit (25) which receives at least the signals indicative of an over-current (OcHsd, OcLsd) and it is configured to switch off the high side and low side switches if an anomaly is detected in the pattern of over-current events (P, P1) in the the signals indicative of an over-current (OcHsd, OcLsd).

公开(公告)号：EP4293864A1

公开(公告)日：2023-12-20

申请号：EP23175108.2

申请日：2023-05-24

Applicant: STMicroelectronics S.r.l.

Inventor： MARZO, Alberto ,  RANDAZZO, Vincenzo ,  POLETTO, Vanni ,  SUSINNA, Giovanni

IPC: H02J7/00

Abstract: A capacitance (Cload) coupled to a source of electrical charge (S) via a drain-source current flow path through a field-effect transistor (M1), is precharged by making the field-effect transistor (M1) selectively conductive in response to the gate-source voltage (Vgs) of the field-effect transistor (M1) exceeding an (e.g., temperature-dependent) threshold (Vth). The difference between the gate-source voltage (Vgs) of the field-effect transistor (M1) and the threshold (Vth) provides an overdrive value of the field-effect transistor (M1). The gate of the field-effect transistor (M1) is driven with a variable gate-source voltage (Vgs) having as a target maintaining a constant overdrive value. Electrical charge is thus controllably transferred from the source (S) to the capacitance (Cload) via the drain-source current flow path through the field-effect transistor (M1) avoiding undesirably high inrush currents and hot spotting.

公开(公告)号：EP4280215A3

公开(公告)日：2023-12-06

申请号：EP23164276.0

申请日：2023-03-27

Applicant: STMicroelectronics S.r.l.

Inventor： GIRARDI, Walter

IPC: G11C29/12 ,  G11C29/48 ,  G11C29/14

Abstract: A circuit (500) for reading or writing a random access memory, RAM (502) comprises:
a shift register (508) coupled to the RAM (502), a test data input (504), and a test data output (506); and
a control circuit (510) configured to generate a pulse every N clock cycles, each pulse triggering a RAM access operation transferring data between the shift register and the RAM (502), N being equal to a data width of the RAM divided by a parallel factor, the parallel factor being a number of pins in either the test data input or the test data output configured for parallel data loading.

公开(公告)号：EP4283508A1

公开(公告)日：2023-11-29

申请号：EP23172246.3

申请日：2023-05-09

Applicant: STMicroelectronics S.r.l.

Inventor： ALFARANO, Marco ,  MASSASCUSA, Sofia

IPC: G06F21/77 ,  G07F7/10

Abstract: Method for introducing personalization data in non-volatile memories of a plurality of integrated circuit cards, in particular secure elements, in particular integrated circuit cards, by storing Token Non-Volatile Memory (NVM) Images comprising
writing in the non-volatile memory (61) of a given integrated circuit (60) a static data image (SI), corresponding to an invariant part of non-volatile memory (61) common to said plurality of integrated circuits (60) including an operating system, and
writing in the static data image (SI) a set of personalization data (DI, PD, UPD) representing data specific of the given integrated circuit (60),
wherein said method includes
storing (232) a subset (UPD) of personalization data (DI, PD, UPD) in said non-volatile memories of a plurality of integrated circuits by
reserving (234) an area (61b) of the non-volatile memory for said subset (UPD) of personalization data,
storing (236) commands (SC(AC,K)), in particular APDU, configured to perform the writing of respective personalization data values (K) in said subset (UPD) by corresponding applications and/or operative system stored in said integrated circuit (61),
said storing (234) commands comprising converting (236a) said commands with a known coding obtaining an inner command script (ICS) comprising said commands encoded therein and storing (236b) said inner command script in said area (61b) of the non-volatile memory for said subset (UPD) of personalization data,
providing (238) a decoding software module (SEE), in particular an application, which is configured to decode said inner command script (ICS) obtaining said commands (SC(AC,K)), in particular APDU, configured to perform the writing of personalization data values in said subset (UPD) and to execute them,
at a subsequent activation of the integrated circuit by said decoding software module (SEE) decoding (250) and executing said inner command script (ICS).

公开(公告)号：EP4283435A1

公开(公告)日：2023-11-29

申请号：EP23172824.7

申请日：2023-05-11

Applicant: STMicroelectronics S.r.l.

Inventor： RIZZARDINI, Federico ,  BRACCO, Lorenzo

IPC: G06F1/16 ,  G06F1/3206 ,  G06F1/3287

Abstract: The present disclosure is directed to a device and method for lid angle detection that is accurate even if the device is activated in an upright position. While the device is in a sleep state, first and second sensor units measure acceleration and angular velocity, and calculate orientations of respective lid components based on the acceleration and angular velocity measurements. Upon the device exiting the sleep state, a processor estimates the lid angle using the calculated orientations, sets the estimated lid angle as an initial lid angle, and updates the initial lid angle using, for example, two accelerometers; two accelerometers and two gyroscopes; two accelerometers and two magnetometers; or two accelerometers, two gyroscopes, and two magnetometers.

公开(公告)号：EP4277130A1

公开(公告)日：2023-11-15

申请号：EP23164784.3

申请日：2023-03-28

Applicant: STMicroelectronics S.r.l.

Inventor： POLETTO, Vanni ,  LOI, Fabrizio

IPC: H03K17/082

Abstract: A method, comprising: coupling a high-side switching transistor (Q HS ) between a high-side reference node (Vs) and a switching node (V OUT ), coupling a low-side switching transistor (Q LS ) between the switching node (V OUT ) and a low-side reference node (GND); coupling an inductive load (L, Z L ) to the switching node (V OUT ) and to a reference node among the high-side reference node (Vs) and the low-side reference node (GND), arranging the respective high-side switch (Q HS ) or low-side switch (Q LS ) to be freewheeling as a result, coupling an inductive load (L, Z L ) to the switching node (V OUT ) and to a reference node selected out of the high-side reference node (Vs) and the low-side reference node (GND), with a respective one of the high-side switching transistor (Q HS ) or low-side switching transistor (Q LS ) being freewheeling as a result, and in response to a short circuit occurring at the switching node (V OUT ) with the respective freewheeling switching transistor (Q HS , Q LS ) in the conductive state: sensing (22; M S ) an electrical signal (V OUT ; I HS ; I LS ) at the switching node (V OUT ), performing a comparison (22) between the electrical signal (V OUT ; I HS ; I LS ) sensed at the switching node (V OUT ) and a threshold level (I REF , V TH , 23; 23A), and providing a driving signal (CMP; 24, 26, 21) to the control node of the respective freewheeling switching transistor to switch the respective freewheeling switching transistor (Q HS , Q LS ) to the non-conductive state as a result of the comparison indicating that the electrical signal (I HS ; I LS ) has reached the threshold level (I REF , V TH , 23; 23A).