SPLIT LASER SCRIBE
    11.
    发明公开
    SPLIT LASER SCRIBE 审中-公开
    分裂激光切割

    公开(公告)号:EP2537179A1

    公开(公告)日:2012-12-26

    申请号:EP10848614.3

    申请日:2010-10-08

    Abstract: A dual-beam laser cutting system uses laser beam polarization to output two identical laser beams. The dual identical laser beams are spaced appropriately to simultaneously cut a wafer thus increasing the laser cutting system's throughput as compared to a single-laser cutting system. In one implementation, the dual-beam laser cutting system (100) utilizes a beam expander (220), two half- wave plates (224, 238), a polarizing beam splitter (228), a mirror (236), and two lenses (234, 242) to provide two identical laser beams (202, 204) from a single laser source (214). The identical laser beams (202, 204) are tuned to have the same power, cross-sectional diameter, and polarization direction. One of the half-wave plates (224) is rotated to yield laser beams with the same power. The other half- wave plate (238) is rotated to yield laser beams with the same polarization direction.

    Abstract translation: 双光束激光切割系统使用激光束偏振来输出两个相同的激光束。 与单一激光切割系统相比,双重相同的激光束适当间隔以同时切割晶圆,从而增加激光切割系统的产量。 在一个实施方式中,双光束激光切割系统(100)利用光束扩展器(220),两个半波片(224,238),偏振分束器(228),反射镜(236)和两个透镜 (234,242)以从单个激光源(214)提供两个相同的激光束(202,204)。 相同的激光束(202,204)被调谐为具有相同的功率,横截面直径和偏振方向。 旋转一个半波片(224)以产生具有相同功率的激光束。 另一个半波片(238)旋转以产生具有相同偏振方向的激光束。

    LINEAR DEPOSITION SOURCE
    12.
    发明公开
    LINEAR DEPOSITION SOURCE 审中-公开
    LINEAR矿源

    公开(公告)号:EP2507403A1

    公开(公告)日:2012-10-10

    申请号:EP10833708.0

    申请日:2010-06-17

    CPC classification number: C23C14/243 C23C14/26 C23C14/562 F16L59/029

    Abstract: A deposition source includes at least one crucible for containing deposition material. A body includes a conductance channel with an input coupled to an output of the crucible. A heater increases a temperature of the crucible so that the crucible evaporates the deposition material into the conductance channel. A plurality of nozzles is coupled to an output of the conductance channel so that evaporated deposition material is transported from the crucible through the conductance channel to the plurality of nozzles where the evaporated deposition material is ejected from the plurality of nozzles to form a deposition flux. At least one of the plurality of nozzles includes a tube that is positioned proximate to the conductance channel so that the tube restricts an amount of deposition material supplied to the nozzle including the tube.

    Apparatus and method for controlling temperature uniformity of substrates
    13.
    发明公开
    Apparatus and method for controlling temperature uniformity of substrates 审中-公开
    Vorrichtung und Verfahren zur Steuerung derTemperaturgleichmäßigkeitvon Substraten

    公开(公告)号:EP2402108A1

    公开(公告)日:2012-01-04

    申请号:EP11007339.2

    申请日:2001-08-08

    Abstract: An apparatus and method for providing substantially uniform substrate temperature in a chemical vapor deposition reaction chamber is provided. The method and apparatus utilize a carrier (110) for holding substrate (160) in the reaction chamber and a plurality of heating elements (120, 130, 140) arranged to heat the carrier and the substrate. A substrate pyrometer (138, 139) measures the temperature of the substrates to provide a signal representing the process temperature. This signal is sued in a feedback loop (151, 134, 132) to control one or more of the heating elements. At least two carrier pyrometers (126, 136, 146) focused at different zones of the carrier are provided. The signals from the carrier pyrometers are compared to provide an indication of temperature non-uniformity. This indication is used in a separate feedback loop (149, 124, 122) to adjust other heating elements so as to maintain temperature uniformity across the carrier.

    Abstract translation: 提供了一种用于在化学气相沉积反应室中提供基本上均匀的衬底温度的装置和方法。 所述方法和装置利用用于将反应室中的基板(160)保持的载体(110)和布置成加热载体和基板的多个加热元件(120,130,140)。 衬底高温计(138,139)测量衬底的温度以提供表示工艺温度的信号。 该信号在反馈回路(151,134,132)中起诉以控制一个或多个加热元件。 提供聚焦在载体的不同区域的至少两个载体高温计(126,136,146)。 比较来自载体高温计的信号以提供温度不均匀性的指示。 该指示用于单独的反馈回路(149,124,122)中以调节其他加热元件,以便保持载体上的温度均匀性。

    CHEMICAL VAPOR DEPOSITION FLOW INLET ELEMENTS AND METHODS
    14.
    发明公开
    CHEMICAL VAPOR DEPOSITION FLOW INLET ELEMENTS AND METHODS 审中-公开
    维多利亚FÜRCHEMISCHE GASPHASENABSCHEIDUNG的STRÖMUNGSEINLASSELEMENTE

    公开(公告)号:EP2356672A2

    公开(公告)日:2011-08-17

    申请号:EP09831089.9

    申请日:2009-12-03

    CPC classification number: C30B25/14 C23C16/45574 C23C16/45578 C23C16/4584

    Abstract: A flow inlet element (22) for a chemical vapor deposition reactor (10) is formed from a plurality of elongated tubular elements (64, 65) extending side-by-side with one another in a plane transverse to the upstream to downstream direction of the reactor. The tubular elements have inlets for ejecting gas in the downstream direction. A wafer carrier (14) rotates around an upstream to downstream axis. The gas distribution elements may provide a pattern of gas distribution which is asymmetrical with respect to a medial plane (108) extending through the axis.

    Abstract translation: 用于化学气相沉积反应器的流入口元件由在与反应器的上游到下游方向横切的平面中彼此并排延伸的多个细长管状元件形成。 管状元件具有用于沿下游方向喷射气体的入口。 晶片载体围绕上游到下游轴线旋转。 气体分配元件可以提供相对于延伸穿过轴线的中间平面不对称的气体分布图案。

    ELECTRICAL CONTACTS FOR USE WITH VACUUM DEPOSITION SOURCES
    15.
    发明公开
    ELECTRICAL CONTACTS FOR USE WITH VACUUM DEPOSITION SOURCES 有权
    电接触电源蒸发源

    公开(公告)号:EP2321444A2

    公开(公告)日:2011-05-18

    申请号:EP09806957.8

    申请日:2009-08-11

    CPC classification number: C23C14/243 C23C14/0623

    Abstract: The present invention provides electrical contact assemblies can be used with vacuum deposition sources. In one exemplary application, the electrical contact assemblies of the present invention provide electrical contact to an arcuate or otherwise curved surface of a heating device used with a vacuum deposition source.

    SCANNING PROBE MICROSCOPY METHOD AND APPARATUS UTILIZING SAMPLE PITCH
    17.
    发明公开
    SCANNING PROBE MICROSCOPY METHOD AND APPARATUS UTILIZING SAMPLE PITCH 有权
    新西兰国家杜塞尔多夫

    公开(公告)号:EP1949086A2

    公开(公告)日:2008-07-30

    申请号:EP06825377.2

    申请日:2006-09-29

    Abstract: The preferred embodiments are directed to a method and apparatus of operating a scanning probe microscope (SPM) to perform sample measurements using a survey scan that is less than five lines, and more preferably two lines, to accurately locate a field of features of a sample. This is accomplished by selecting a step distance between adjacent lines of the survey scan that does not equal the pitch of the features in a direction orthogonal to the direction the survey scan traverses, i.e., does not equal the pitch of the features in the scan direction, XPO. The aspect ratio of the scans can also be modified to further improve sample throughput.

    Abstract translation: 优选实施例涉及一种操作扫描探针显微镜(SPM)的方法和装置,以使用小于五行,更优选两行的测量扫描进行样本测量,以精确地定位样本的特征场 。 这是通过选择在与扫描扫描方向正交的方向上不等于特征的间距的测量扫描的相邻行之间的步距,即不等于扫描方向上的特征的间距 ,X PO PO。 也可以修改扫描的宽高比以进一步提高样品通量。

    ALKYL PUSH FLOW FOR VERTICAL FLOW ROTATING DISK REACTORS
    19.
    发明公开
    ALKYL PUSH FLOW FOR VERTICAL FLOW ROTATING DISK REACTORS 有权
    垂直流HUB REACTORS和治疗方法,这些方法

    公开(公告)号:EP1660697A1

    公开(公告)日:2006-05-31

    申请号:EP03818356.2

    申请日:2003-08-20

    Abstract: In a rotating disk reactor for growing epitaxial layers on substrate or other CVD reactor system, gas directed toward the substrates at gas inlets at different radial distances from the axis of rotation of the disk has both substantially the same gas flow rate/velocity and substantially the same gas density at each inlet. The gas directed toward portions of the disk remote from the axis may include a higher concentration of a reactant gas than the gas directed toward portions of the disk close to the axis, so that portions of the substrate surfaces at different distances from the axis receive substantially the same amount of reactant gas per unit area, and a combination of carrier gases with different relative molecular weights at different radial distances from the axis of rotation are employed to substantially make equal the gas density in each region of the reactor. The system may be applied with a combination or carrier gases at multiple gas inlets, a combination of carrier and reactant gases at multiple inlets, and may be used with an arbitrarily large number of gases, when at least two gases of different molecular weights are provided. A linear flow pattern is achieved within the reactor, avoiding laminar recirculation areas, and permitting uniform deposition and growth of epitaxial layers on the substrate.

    INTEGRATED PHASE SEPARATOR FOR ULTRA HIGH VACUUM SYSTEM
    20.
    发明授权
    INTEGRATED PHASE SEPARATOR FOR ULTRA HIGH VACUUM SYSTEM 有权
    综合PHASENTRENNVORRCHTUNG对于高真空系统

    公开(公告)号:EP1330561B1

    公开(公告)日:2004-11-10

    申请号:EP01971298.3

    申请日:2001-09-21

    CPC classification number: F04B37/08 C30B23/02

    Abstract: An integrated phase separator for use in an ultra high vacuum system, for example, a molecular beam epitaxy system, is described. The vacuum chamber has a cryogenic panel disposed therein. The cryogenic panel includes a cryogenic shroud region and a phase separator region. Liquid nitrogen is introduced into the cryogenic panel via an inlet line. As the liquid nitrogen warms and vaporizes, nitrogen vapor rises within the shroud. The phase separator region within the cryogenic panel provides a near atmospheric pressure vapor barrier over the liquid nitrogen so that the nitrogen vapor may escape smoothly through the outlet of the panel, without forming gas bursts. Also, the phase separator region is vacuum jacketed to prevent cryogenic shroud surface temperature changes due to variations in liquid nitrogen levels, thereby increasing the cryogenic shroud's pumping stability.

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