Abstract:
A dual-beam laser cutting system uses laser beam polarization to output two identical laser beams. The dual identical laser beams are spaced appropriately to simultaneously cut a wafer thus increasing the laser cutting system's throughput as compared to a single-laser cutting system. In one implementation, the dual-beam laser cutting system (100) utilizes a beam expander (220), two half- wave plates (224, 238), a polarizing beam splitter (228), a mirror (236), and two lenses (234, 242) to provide two identical laser beams (202, 204) from a single laser source (214). The identical laser beams (202, 204) are tuned to have the same power, cross-sectional diameter, and polarization direction. One of the half-wave plates (224) is rotated to yield laser beams with the same power. The other half- wave plate (238) is rotated to yield laser beams with the same polarization direction.
Abstract:
A deposition source includes at least one crucible for containing deposition material. A body includes a conductance channel with an input coupled to an output of the crucible. A heater increases a temperature of the crucible so that the crucible evaporates the deposition material into the conductance channel. A plurality of nozzles is coupled to an output of the conductance channel so that evaporated deposition material is transported from the crucible through the conductance channel to the plurality of nozzles where the evaporated deposition material is ejected from the plurality of nozzles to form a deposition flux. At least one of the plurality of nozzles includes a tube that is positioned proximate to the conductance channel so that the tube restricts an amount of deposition material supplied to the nozzle including the tube.
Abstract:
An apparatus and method for providing substantially uniform substrate temperature in a chemical vapor deposition reaction chamber is provided. The method and apparatus utilize a carrier (110) for holding substrate (160) in the reaction chamber and a plurality of heating elements (120, 130, 140) arranged to heat the carrier and the substrate. A substrate pyrometer (138, 139) measures the temperature of the substrates to provide a signal representing the process temperature. This signal is sued in a feedback loop (151, 134, 132) to control one or more of the heating elements. At least two carrier pyrometers (126, 136, 146) focused at different zones of the carrier are provided. The signals from the carrier pyrometers are compared to provide an indication of temperature non-uniformity. This indication is used in a separate feedback loop (149, 124, 122) to adjust other heating elements so as to maintain temperature uniformity across the carrier.
Abstract:
A flow inlet element (22) for a chemical vapor deposition reactor (10) is formed from a plurality of elongated tubular elements (64, 65) extending side-by-side with one another in a plane transverse to the upstream to downstream direction of the reactor. The tubular elements have inlets for ejecting gas in the downstream direction. A wafer carrier (14) rotates around an upstream to downstream axis. The gas distribution elements may provide a pattern of gas distribution which is asymmetrical with respect to a medial plane (108) extending through the axis.
Abstract:
The present invention provides electrical contact assemblies can be used with vacuum deposition sources. In one exemplary application, the electrical contact assemblies of the present invention provide electrical contact to an arcuate or otherwise curved surface of a heating device used with a vacuum deposition source.
Abstract:
A method of operating a metrology instrument includes generating relative motion between a probe (14) and a sample (22) at a scan frequency using an actuator (110). The method also includes detecting motion of the actuator using a position sensor (108) that exhibits noise in the detected motion, and controlling the position of the actuator (110) using a feedback loop (104) and a feed forward algorithm (120). In this embodiment, the controlling step attenuates noise in the actuator position compared to noise exhibited by the position sensor over the scan bandwidth. Scan frequencies up to a third of the first scanner resonance frequency or greater than 300 Hz are possible.
Abstract:
The preferred embodiments are directed to a method and apparatus of operating a scanning probe microscope (SPM) to perform sample measurements using a survey scan that is less than five lines, and more preferably two lines, to accurately locate a field of features of a sample. This is accomplished by selecting a step distance between adjacent lines of the survey scan that does not equal the pitch of the features in a direction orthogonal to the direction the survey scan traverses, i.e., does not equal the pitch of the features in the scan direction, XPO. The aspect ratio of the scans can also be modified to further improve sample throughput.
Abstract translation:优选实施例涉及一种操作扫描探针显微镜(SPM)的方法和装置,以使用小于五行,更优选两行的测量扫描进行样本测量,以精确地定位样本的特征场 。 这是通过选择在与扫描扫描方向正交的方向上不等于特征的间距的测量扫描的相邻行之间的步距,即不等于扫描方向上的特征的间距 ,X PO PO。 也可以修改扫描的宽高比以进一步提高样品通量。
Abstract:
A method and apparatus for fabricating a conformal thin film on a substrate are disclosed. The method includes introducing a gas from a gas inlet into an expansion volume associated with an atomic layer deposition (ALD) system. The gas is flowed through a diffuser plate adjacent to the expansion volume and a reaction chamber. The diffuser plate includes a protrusion located opposite the gas inlet and the protrusion reduces turbulence in the expansion volume.
Abstract:
In a rotating disk reactor for growing epitaxial layers on substrate or other CVD reactor system, gas directed toward the substrates at gas inlets at different radial distances from the axis of rotation of the disk has both substantially the same gas flow rate/velocity and substantially the same gas density at each inlet. The gas directed toward portions of the disk remote from the axis may include a higher concentration of a reactant gas than the gas directed toward portions of the disk close to the axis, so that portions of the substrate surfaces at different distances from the axis receive substantially the same amount of reactant gas per unit area, and a combination of carrier gases with different relative molecular weights at different radial distances from the axis of rotation are employed to substantially make equal the gas density in each region of the reactor. The system may be applied with a combination or carrier gases at multiple gas inlets, a combination of carrier and reactant gases at multiple inlets, and may be used with an arbitrarily large number of gases, when at least two gases of different molecular weights are provided. A linear flow pattern is achieved within the reactor, avoiding laminar recirculation areas, and permitting uniform deposition and growth of epitaxial layers on the substrate.
Abstract:
An integrated phase separator for use in an ultra high vacuum system, for example, a molecular beam epitaxy system, is described. The vacuum chamber has a cryogenic panel disposed therein. The cryogenic panel includes a cryogenic shroud region and a phase separator region. Liquid nitrogen is introduced into the cryogenic panel via an inlet line. As the liquid nitrogen warms and vaporizes, nitrogen vapor rises within the shroud. The phase separator region within the cryogenic panel provides a near atmospheric pressure vapor barrier over the liquid nitrogen so that the nitrogen vapor may escape smoothly through the outlet of the panel, without forming gas bursts. Also, the phase separator region is vacuum jacketed to prevent cryogenic shroud surface temperature changes due to variations in liquid nitrogen levels, thereby increasing the cryogenic shroud's pumping stability.