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公开(公告)号：EP1032047A3
公开(公告)日：2001-11-28
申请号：EP00301097.2
申请日：2000-02-11
申请人： Hitachi, Ltd.
IPC分类号： H01L29/739 , H01L29/06 , H01L23/528 , H02M7/527
CPC分类号： H01L29/7397 , H01L29/0619 , H01L29/0692 , H01L29/1095 , H01L2924/0002 , H01L2924/00
摘要： An area of a narrow interval between neighboring insulating gates and an area of a wide interval are provided and in the area of a wide interval, a p-type well layer deeper than a p-type base layer is provided. By use of this constitution, even if an area of a narrow interval between neighboring insulating gates and an area of a wide interval are provided, the withstand voltage will not be lowered.
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公开(公告)号：EP2221870A3
公开(公告)日：2011-03-09
申请号：EP10002938.8
申请日：2007-06-13
申请人： Hitachi Ltd.
CPC分类号： H05K1/144 , H01L23/24 , H01L25/072 , H01L25/16 , H01L25/162 , H01L25/18 , H01L2224/45124 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2224/48472 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/19107 , H01L2924/30107 , H05K1/0254 , H05K1/0271 , H05K1/147 , H05K3/284 , H05K3/3447 , H05K2201/042 , H05K2201/09081 , H05K2201/10287 , H05K2201/10318 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A power semiconductor module comprises
a power circuit portion having a power semiconductor chip (113, 111) located on an upper surface of a base (108) having a case (500) on an outer periphery of the base;
a printed board (102) with a circuit component mounted thereon, located above the power circuit potion with a space therebetween;
a supporter (1031, 1032) which couples the printed board (102) with a cover plate (105) located on an upper portion of the case (500); and
silicon gel (101) which is filled in the semiconductor module.
An elastic coefficient of all or part of the printed board (102) is smaller than that of the cover plate (105).摘要翻译： 提供弹性印刷电路板（102），使得由硅胶（101）施加的应力被印刷电路板（102）吸收。 此外，印刷电路板（102）形成为如此狭窄，使得应力可能逸出。 另一方面，施加高电压的导线在相应的印刷电路板上图案化。 这用于防止通过作为电流通道的相同印刷电路板的表面放电。 该设计使得能够密封电源模块，防止潮湿或污染的侵入以及盖板（105）的位移，转换和裂纹。
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公开(公告)号：EP2237319A3
公开(公告)日：2010-10-27
申请号：EP10007172.9
申请日：2000-02-11
申请人： Hitachi Ltd.
IPC分类号： H01L29/739 , H01L29/06 , H01L23/528 , H02M7/527
CPC分类号： H01L29/7397 , H01L29/0619 , H01L29/0692 , H01L29/1095 , H01L2924/0002 , H01L2924/00
摘要： An area of a narrow interval between neighboring insulating gates and an area of a wide interval are provided and in the area of a wide interval, a p-type well layer deeper than a p-type base layer is provided. By use of this constitution, even if an area of a narrow interval between neighboring insulating gates and an area of a wide interval are provided, the withstand voltage will not be lowered.
摘要翻译： 提供相邻绝缘栅极之间的窄间隔区域和宽间隔区域的区域，并且在宽间隔区域中设置比p型基极层更深的p型阱层。 通过使用这种结构，即使设置相邻绝缘栅之间的窄间隔区域和宽间隔区域，耐压也不会降低。
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公开(公告)号：EP1032047B1
公开(公告)日：2010-09-22
申请号：EP00301097.2
申请日：2000-02-11
申请人： Hitachi, Ltd.
IPC分类号： H01L29/739 , H01L29/06 , H01L23/528 , H02M7/527
CPC分类号： H01L29/7397 , H01L29/0619 , H01L29/0692 , H01L29/1095 , H01L2924/0002 , H01L2924/00
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公开(公告)号：EP2221870A2
公开(公告)日：2010-08-25
申请号：EP10002938.8
申请日：2007-06-13
申请人： Hitachi Ltd.
CPC分类号： H05K1/144 , H01L23/24 , H01L25/072 , H01L25/16 , H01L25/162 , H01L25/18 , H01L2224/45124 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2224/48472 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/19107 , H01L2924/30107 , H05K1/0254 , H05K1/0271 , H05K1/147 , H05K3/284 , H05K3/3447 , H05K2201/042 , H05K2201/09081 , H05K2201/10287 , H05K2201/10318 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A power semiconductor module comprises
a power circuit portion having a power semiconductor chip (113, 111) located on an upper surface of a base (108) having a case (500) on an outer periphery of the base;
a printed board (102) with a circuit component mounted thereon, located above the power circuit potion with a space therebetween;
a supporter (1031, 1032) which couples the printed board (102) with a cover plate (105) located on an upper portion of the case (500); and
silicon gel (101) which is filled in the semiconductor module.
An elastic coefficient of all or part of the printed board (102) is smaller than that of the cover plate (105).摘要翻译： 功率半导体模块包括电源电路部分，该电源电路部分具有位于基座的外表面上具有壳体（500）的基座（108）的上表面上的功率半导体芯片（113,111） 其上安装有电路部件的印刷电路板（102）位于电力电路部分之上，其间具有空间; 支撑件（1031,1032），其将印刷板（102）与位于壳体（500）的上部的盖板（105）连接; 和填充在半导体模块中的硅凝胶（101）。 印刷电路板（102）的全部或部分的弹性系数小于盖板（105）的弹性系数。
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公开(公告)号：EP1811572A3
公开(公告)日：2007-09-19
申请号：EP07009037.8
申请日：2000-02-11
申请人： Hitachi, Ltd.
IPC分类号： H01L29/739 , H01L29/06 , H01L23/528 , H02M7/527
CPC分类号： H01L29/7397 , H01L29/0619 , H01L29/0692 , H01L29/1095 , H01L2924/0002 , H01L2924/00
摘要： An area of a narrow interval between neighboring insulating gates (7) and an area of a wide interval are provided and in the area of a wide interval, a p-type well layer deeper (9) than a p-type base layer is provided. By use of this constitution, even if an area of a narrow interval between neighboring insulating gates and an area of a wide interval are provided, the withstand voltage will not be lowered.
摘要翻译： 提供相邻绝缘栅极（7）之间的窄间隔区域和宽间隔区域的区域，并且在宽间隔区域中提供比p型基极层更深（9）的p型阱层 。 通过使用这种结构，即使设置相邻绝缘栅之间的窄间隔区域和宽间隔区域，耐压也不会降低。
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17.发明公开Semiconductor device and power converter using the same 有权Halbleiterbauelement und dieses verwendender Leistungswandler
公开(公告)号：EP1032047A2
公开(公告)日：2000-08-30
申请号：EP00301097.2
申请日：2000-02-11
申请人： HITACHI, LTD.
IPC分类号： H01L29/739 , H01L29/06 , H01L23/528 , H02M7/527
CPC分类号： H01L29/7397 , H01L29/0619 , H01L29/0692 , H01L29/1095 , H01L2924/0002 , H01L2924/00
摘要： An area of a narrow interval between neighboring insulating gates and an area of a wide interval are provided and in the area of a wide interval, a p-type well layer deeper than a p-type base layer is provided. By use of this constitution, even if an area of a narrow interval between neighboring insulating gates and an area of a wide interval are provided, the withstand voltage will not be lowered.
摘要翻译： 提供了相邻绝缘栅极和宽间隔区域之间的窄间隔区域，并且在宽间隔的区域中，提供了比p型基极层更深的p型阱层。 通过使用这种结构，即使设置相邻绝缘栅极与宽间隔区域之间的窄间隔的区域，也不会降低耐压。
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