-
公开(公告)号：EP0191447A3
公开(公告)日：1988-12-14
申请号：EP86101672
申请日：1986-02-10
发明人： Satomi, Mitsuo , Hirota, Ken , Inoue, Osamu
IPC分类号： G11B05/21 , G11B05/235 , G11B05/147
CPC分类号： G11B5/21 , G11B5/1475
摘要： Tape contact surface of magnetic head is made of magnetic substance of multi-layered structure; interface insulation material for said multi layered structure and/or gap spacer material are made of oxide, complex oxide, nitride and carbide of transition metal elements, lla group elements of periodic table and Zn; and accumulation of magnetic material in magnet tape is prevented and output of magnetic head is stabilized.
摘要翻译： 磁头的磁带接触表面由多层结构的磁性物质制成; 所述多层结构和/或间隙间隔物材料的界面绝缘材料由过渡金属元素的氧化物，复合氧化物，氮化物和碳化物，元素周期表的IIa族元素和Zn制成; 并且防止了磁性材料在磁带中的积聚并且磁头的输出稳定。
-
公开(公告)号：EP0791915B1
公开(公告)日：2004-08-11
申请号：EP97102826.1
申请日：1997-02-21
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/39 , G11B5/3903 , G11B2005/3996 , H01F10/3204 , H01F10/3268 , H01L43/08
-
13.发明授权
公开(公告)号：EP0930624B1
公开(公告)日：2003-10-22
申请号：EP99100579.4
申请日：1999-01-13
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , G11B5/3948 , G11B5/3954 , G11B5/3967 , G11B2005/3996 , H01F10/32 , H01F10/3218 , H01F10/3268 , H01F10/3295 , H01F41/302 , H01L43/10 , Y10S428/90 , Y10T428/1107 , Y10T428/1121
-
14.发明公开Magnetoresistance effect device, and method for producing the same 审中-公开Magnetowiderstandseffektvorrichtung und Herstellungsverfahren desselben
公开(公告)号：EP1134815A2
公开(公告)日：2001-09-19
申请号：EP01113584.5
申请日：1998-09-28
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B5/3967 , G11B2005/3996 , H01F10/3268 , H01L43/10
摘要： A magnetoresistance effect device of the present invention includes a multilayer film. The multilayer film includes an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film and a second ferromagnetic film, which are provided in this order on a non-magnetic substrate directly or via an underlying layer. The antiferromagnetic film comprises an α-Fe 2 O 3 film. A surface roughness of the multilayer film is about 0.5 nm or less.
摘要翻译： 本发明的磁阻效应器件包括多层膜。 多层膜包括反铁磁性膜，第一铁磁性膜，非磁性膜和第二铁磁性膜，其以直接或经由下层在非磁性基板上依次设置。 反铁磁膜包含α-Fe2O3膜。 多层膜的表面粗糙度为约0.5nm以下。
-
15.发明公开Exchange coupling film, magnetoresistance effect device, magnetoresistance effective head and method for producing exchange coupling film 审中-公开交换耦合膜，磁阻阵列，磁阻磁头，以及用于交替离合器膜的制备方法
公开(公告)号：EP1122749A3
公开(公告)日：2001-08-16
申请号：EP01109403.4
申请日：1999-01-13
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , G11B5/3948 , G11B5/3954 , G11B5/3967 , G11B2005/3996 , H01F10/32 , H01F10/3218 , H01F10/3268 , H01F10/3295 , H01F41/302 , H01L43/10 , Y10S428/90 , Y10T428/1107 , Y10T428/1121
摘要： An exchange coupling film of the present invention comprises a ferromagnetic layer and a pinning layer which is provided in contact with the ferromagnetic layer for pinning a magnetization direction of the ferromagnetic layer, the pinning layer comprising an (AB) 2 O x layer, wherein A is a single element, and B is a single element, and wherein : O denotes an oxygen atom; 2.8
摘要翻译： 交换耦联薄膜的本发明包括其被设置成与所述铁磁性层为钉扎铁磁性层的磁化方向的铁磁层和钉扎层中的所有，钉扎层包括（AB）2 O x层的，worin A是 单个元件，而B是一个单独的元件，并worin：O表示氧的原子; 2.8
-
16.发明公开Exchange coupling film, magnetoresistance effect device, magnetoresistance effective head and method for producing exchange coupling film 审中-公开交换耦合膜，磁阻效应器件，磁阻效应头及交换耦合膜的制造方法
公开(公告)号：EP1122749A2
公开(公告)日：2001-08-08
申请号：EP01109403.4
申请日：1999-01-13
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , G11B5/3948 , G11B5/3954 , G11B5/3967 , G11B2005/3996 , H01F10/32 , H01F10/3218 , H01F10/3268 , H01F10/3295 , H01F41/302 , H01L43/10 , Y10S428/90 , Y10T428/1107 , Y10T428/1121
摘要： An exchange coupling film of the present invention comprises a ferromagnetic layer and a pinning layer which is provided in contact with the ferromagnetic layer for pinning a magnetization direction of the ferromagnetic layer, the pinning layer comprising an (AB) 2 O x layer, wherein A is a single element, and B is a single element, and wherein : O denotes an oxygen atom; 2.8
摘要翻译： 本发明的交换耦合膜包括铁磁层和与铁磁层接触设置的钉扎层，用于钉扎铁磁层的磁化方向，钉扎层包括（AB）2Ox层，其中A是 单个元素，并且B是单个元素，并且其中：O表示氧原子; 2.8
-
17.发明公开
公开(公告)号：EP0905802A3
公开(公告)日：1999-05-06
申请号：EP98118338.7
申请日：1998-09-28
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B5/3967 , G11B2005/3996 , H01F10/3268 , H01L43/10
摘要： A magnetoresistance effect device of the present invention includes a multilayer film. The multilayer film includes an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film and a second ferromagnetic film, which are provided in this order on a non-magnetic substrate directly or via an underlying layer. The antiferromagnetic film comprises an α-Fe 2 O 3 film. A surface roughness of the multilayer film is about 0.5 nm or less.
摘要翻译： 本发明的磁阻效应装置包括多层膜。 多层膜包括反铁磁性膜，第一铁磁性膜，非磁性膜和第二铁磁性膜，它们以此顺序直接或通过下层设置在非磁性基板上。 反铁磁膜包含α-Fe2O3膜。 多层膜的表面粗糙度为约0.5nm或更小。
-
公开(公告)号：EP0791915A3
公开(公告)日：1998-03-04
申请号：EP97102826.1
申请日：1997-02-21
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/39 , G11B5/3903 , G11B2005/3996 , H01F10/3204 , H01F10/3268 , H01L43/08
摘要： A magnetoresistive device of the present invention includes: a soft magnetic layer; a hard magnetic layer; a non-magnetic layer formed between the soft magnetic layer and the hard magnetic layer; and an interface magnetic layer, provided at an interface between the soft magnetic layer and the non-magnetic layer, for enhancing magnetic scattering, wherein the soft magnetic layer includes an amorphous structure.
-
公开(公告)号：EP0614192A3
公开(公告)日：1995-01-04
申请号：EP93118463.4
申请日：1993-11-15
发明人： Sakakima, Hiroshi , Satomi, Mitsuo , Irie, Yousuke
IPC分类号： G11C11/14
CPC分类号： G11C11/14
摘要： A high performance thin film memory device uses an artificial lattice magnetoresistance effect film, and is operable with a low magnetic field and room temperature; and the device has a magnetic film part (M), current feed lines (R and R') for generating magnetic field for information data writing-in, and an information data read-out line (S) of an artificial lattice magnetoresistance film of a lamination structure of a metallic magnetic thin layers such as Ni-Fe-Co system and a metallic nonmagnetic thin layers such as Cu.
-
公开(公告)号：EP0392675B1
公开(公告)日：1994-08-17
申请号：EP90302945.2
申请日：1990-03-19
发明人： Satomi, Mitsuo , Hirota, Ken , Kugimiya, Koichi
CPC分类号： G11B5/3106 , G11B5/10 , G11B5/147 , Y10S428/90 , Y10T428/1157
-
-
-
-
-
-
-
-
-
搜索结果
75 条记录 (耗时 0.016 秒)
