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51 条记录 (耗时 0.015 秒)

    Thin film magnetic head
    13.
    发明公开
    Thin film magnetic head 失效
    薄膜磁头

    公开(公告)号：EP0866444A1

    公开(公告)日：1998-09-23

    申请号：EP98111392.1

    申请日：1997-02-21

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

    发明人： Sakakima, Hiroshi ,  Satomi, Mitsuo ,  Kawawake, Yasuhiro ,  Irie, Yousuke

    IPC分类号： G11B5/00 ,  G11B5/39

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B2005/3996

    摘要： A thin film magnetic head (100) according to the present invention comprises an upper shield section (3), a lower shield section (6) and a magnetoresistance device section (5). The magnetoresistance device section (5) is disposed in a shield gap (7) between the upper shield section (3) and the lower shield section (6). The magnetoresistance device section (5) is electrically connected to upper shield section (3) and the lower shield section (6) through conductive layers (10a,10b), and current flows through the magnetoresistance device section (5) via the upper shield section (3) and the lower shield section (6). The magnetoresistance device section comprises a multilayer structure exhibiting a giant magnetoresistance effect, the multilayer structure comprises a first magnetic film, a second magnetic film and a non-magnetic film formed between the first magnetic film and the second magnetic film, the non-magnetic film is formed of a tunnel GMR film.

    摘要翻译： 根据本发明的薄膜磁头（100）包括上屏蔽部分（3），下屏蔽部分（6）和磁阻器件部分（5）。 磁阻器件部分（5）设置在上屏蔽部分（3）和下屏蔽部分（6）之间的屏蔽间隙（7）中。 磁阻器件部分（5）通过导电层（10a，10b）与上屏蔽部分（3）和下屏蔽部分（6）电连接，电流通过上屏蔽部分（5）流过磁阻器件部分 （3）和下屏蔽部分（6）。 磁阻器件部分包括呈现出巨大磁阻效应的多层结构，该多层结构包括第一磁膜，第二磁膜和形成在第一磁膜和第二磁膜之间的非磁膜，非磁膜 由隧道GMR膜形成。

    Magnetic recording medium
    15.
    发明公开
    Magnetic recording medium 失效
    磁记录介质

    公开(公告)号：EP0451457A2

    公开(公告)日：1991-10-16

    申请号：EP91101893.5

    申请日：1991-02-11

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

    发明人： Goto, Yoshiki ,  Honda, Kazuyoshi ,  Kawawake, Yasuhiro ,  Sugita, Ryuji ,  Tohma, Kiyokazu ,  Ishida, Tatsuaki

    IPC分类号： G11B5/72

    CPC分类号： G11B5/725 ,  G11B5/72

    摘要： A magnetic recording medium which is improved in durability by having smooth runability and high wear resistance, is obtained by forming a metal oxide film including CoO and a lubricant film of alkyl silane compound on the thin metal film type magnetic recording medium of CoCr or the like.
    The metal oxide film is a thin film including metal oxide of mainly Co, and the alkyl silane compound is composed by a linear or branched alkyl chain and silyl group. So, there is such synergetiv effect of combination of improved wear resistance owing to the metal oxide film and improved frictional performance of the alkyl silane compound having large bonding strength with the metal oxide that the magnetic recording medium having improved durability is realized.

    摘要翻译： 通过具有平滑的流动性和高耐磨性改善耐久性的磁记录介质是通过在CoCr等的金属薄膜型磁记录介质上形成包含CoO和烷基硅烷化合物润滑剂膜的金属氧化物膜而获得的 。 金属氧化物膜是包含主要为Co的金属氧化物的薄膜，并且烷基硅烷化合物由直链或支链烷基链和甲硅烷基组成。 因此，由于金属氧化物膜的改进的耐磨性的组合以及与金属氧化物的粘合强度大的烷基硅烷化合物的摩擦性能的改善，具有改善耐久性的磁记录介质的协同效应。

    Magnetic recording medium
    16.
    发明公开
    Magnetic recording medium 失效
    磁记录介质及其制造方法

    公开(公告)号：EP0415335A3

    公开(公告)日：1991-07-03

    申请号：EP90116439.2

    申请日：1990-08-28

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

    发明人： Sugita, Ryuji ,  Tohma, Kiyokazu ,  Honda, Kazuyoshi ,  Kawawake, Yasuhiro ,  Ishida, Tatsuaki

    IPC分类号： G11B5/66 ,  G11B5/64 ,  G11B5/84

    CPC分类号： G11B5/85 ,  G11B5/66

    摘要： A thin film magnetic recording medium comprising a nonmagnetic substrate (3), a first magnetic layer (4) which comprises cobalt and an axis of easy magnetization of which slants at an angle (φ₁) to a normal of a plane of magnetic recording medium and a second (5) magnetic layer which comprises cobalt and has a thickness of 0.02 to 0.1 µm and smaller than a thickness of said first magnetic layer and an axis of easy magnetization of which slants at an angle (φ₂) to a normal of a plane of magnetic recording medium, which has good high density recording characteristics and improved durability.

    Aligned fine particles, method for producing the same and device using the same
    18.
    发明公开
    Aligned fine particles, method for producing the same and device using the same 审中-公开
    排列好的微粒，其制造方法以及使用该微粒的装置

    公开(公告)号：EP1226878A3

    公开(公告)日：2003-11-26

    申请号：EP02001702.6

    申请日：2002-01-24

    申请人： Matsushita Electric Industrial Co., Ltd.

    发明人： Mino, Norihisa ,  Kawawake, Yasuhiro ,  Morita, Kiyoyuki ,  Yoshii, Shigeo ,  Murakami, Mutuaki ,  Kusumoto, Osamu

    IPC分类号： B05D1/18 ,  C09C3/12 ,  G11B5/39 ,  G11B5/712 ,  G11B5/84 ,  G11C11/16 ,  H01F41/22 ,  H01F41/30 ,  H01L29/788 ,  H01L43/08 ,  H01F1/047 ,  H01F1/03 ,  G11B5/855

    摘要： The present invention provides aligned fine particles(30) that are aligned on a substrate(32). An organic coating film(31) is bonded to surfaces of the fine particles(30) is formed on the surfaces of the fine particles(30). An organic coating film(33) bonded to a surface of the substrate(32) is formed on the surface of the substrate(32). The organic coating film(31) on the surfaces of the fine particles(31) is bonded(34) to the organic coating film(33) on the surface of the substrate(32), whereby the fine particles(31) are immobilized and aligned on the substrate(32). Thus, it is possible to align the fine particles(31) of a nanometer scale in a specific direction. When fine magnetic particles are used, a magnetic recording medium for high recording density can be obtained, and a high-density magnetic recording/reproducing apparatus can be provided.

    摘要翻译： 本发明提供了在衬底（32）上排列的对齐的微粒（30）。 在微粒（30）的表面上形成有微粒（30）的表面上结合有有机涂膜（31）的结构。 接合到基板（32）的表面的有机涂膜（33）形成在基板（32）的表面上。 微粒31的表面的有机覆膜31与基材32的表面的有机覆膜33接合（34），由此微粒（31）被固定， 在衬底（32）上对齐。 因此，可以使纳米级的微粒31在特定的方向上排列。 当使用细小的磁性颗粒时，可以获得用于高记录密度的磁记录介质，并且可以提供高密度磁记录/再现装置。

    Magnetoresistance effect device, head, and memory element
    19.
    发明公开
    Magnetoresistance effect device, head, and memory element 审中-公开
    Magnetowiderstandsbauteil，Kopf und Speiclelement

    公开(公告)号：EP1187103A2

    公开(公告)日：2002-03-13

    申请号：EP01117737.5

    申请日：2001-07-30

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

    发明人： Sakakima, Hiroshi ,  Kawawake, Yasuhiro ,  Sugita, Yasunari

    IPC分类号： G11B5/39 ,  G01R33/09 ,  H01F10/32 ,  G11C11/14 ,  G11C11/15

    CPC分类号： G11C11/16 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3272 ,  H01L27/228 ,  H01L43/08

    摘要： A magnetoresistance effect device includes: a free layer (101) whose magnetization direction is easily rotated by an external magnetic field; a non-magnetization layer (103); and a pinned layer (102) whose magnetization direction is not easily rotated by an external magnetic field, the pinned layer being provided on a face of the non-magnetization layer (103) which is opposite to a face on which the free layer (101) is formed, wherein the pinned layer (102) includes: a first non-magnetic film (104) for exchange-coupling; and first and second magnetic films (105,106) which are antiferromagnetically exchange-coupled to each other via the first non-magnetic film (104), and the first non-magnetic film (104) includes one of the oxides of Ru, Ir, Rh, and Re.

    摘要翻译： 磁阻效应器件包括：其磁化方向容易被外部磁场旋转的自由层（101）; 非磁化层（103）; 以及其磁化方向不容易被外部磁场旋转的被钉扎层（102），所述被钉扎层设置在所述非磁化层（103）的与自由层（101）的面相反的面上 ），其中被钉扎层（102）包括：用于交换耦合的第一非磁性膜（104）; 以及通过第一非磁性膜（104）反铁磁交换耦合的第一和第二磁性膜（105,106），并且第一非磁性膜（104）包括Ru，Ir，Rh的氧化物之一 ，和Re。