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    Magnetoresistive device and magnetoresistive head
    7.
    发明公开
    Magnetoresistive device and magnetoresistive head 失效
    磁阻器件和磁阻头

    公开(公告)号：EP0845820A2

    公开(公告)日：1998-06-03

    申请号：EP97120805.3

    申请日：1997-11-27

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

    发明人： Kawawake, Yasuhiro ,  Sakakima, Hiroshi ,  Satomi, Mitsuo

    IPC分类号： H01L43/08 ,  G11B5/39

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3133 ,  G11B5/3903 ,  G11B5/3951 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3268 ,  H01L43/08

    摘要： The magnetoresistive device of the present invention includes: at least two magnetic layers stacked via a non-magnetic layer therebetween; and a metal reflective layer of conduction electrons formed so as to be in contact with at least one of outermost two layers of the magnetic layers. The metal reflective layer is in contact with one surface of the outermost magnetic layer which is opposite to the other surface of the outermost magnetic layer in contact with the non-magnetic layer. The metal reflective layer is likely to reflect conduction electrons while maintaining a spin direction of electrons.

    摘要翻译： 本发明的磁阻器件包括：至少两个磁性层，通过其间的非磁性层堆叠; 以及传导电子的金属反射层，其形成为与磁性层的最外两层中的至少一层接触。 金属反射层与最外磁性层的一个表面接触，该最外磁性层的一个表面与最外磁性层的与非磁性层接触的另一个表面相对。 金属反射层很可能反射传导电子，同时保持电子的自旋方向。

    Magnetoresistive materials
    10.
    发明公开
    Magnetoresistive materials 失效
    磁阻材料

    公开(公告)号：EP0503499A1

    公开(公告)日：1992-09-16

    申请号：EP92103874.1

    申请日：1992-03-06

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

    发明人： Satomi, Mitsuo ,  Sakakima, Hiroshi

    IPC分类号： H01F10/12

    CPC分类号： B82Y25/00 ,  H01F10/3281 ,  H01L43/10 ,  Y10S428/90 ,  Y10S428/928 ,  Y10T428/12465 ,  Y10T428/12632 ,  Y10T428/1291 ,  Y10T428/12917

    摘要： A magnetoresistive material comprising a first magnetic thin-film layer mainly composed of Co with a thickness of 10 to 100Å, and a second magnetic thin-film layer mainly composed of Ni X Fe Y Co Z with a thickness of 10 to 100Å, both of which layers are alternately laminated through a non-magnetic metallic thin-film layer sandwiched therebetween, mainly composed of Cu with a thickness of 10 to 35Å, wherein X, Y and Z are 0.6 ≦ X ≦ 0.9, 0 ≦ Y ≦ 0.3, and 0.01 ≦ Z ≦ 0.3, respectively, and a second magnetic thin-film layer mainly composed of 50 atomic% or more of Ni, with a thickness of 10 to 100Å, both of which layers are alternately laminated through a non-magnetic metallic thin-film layer sandwiched therebetween mainly composed of Cu with a thickness of 10 to 35Å, and non-magnetic metallic thin-film layers mainly composed of Cu with a thickness of 10 to 25Å, both of the two kinds of layers being laminated, and non-magnetic metallic thin-film layers mainly composed of Ni-Co containing 50 atomic% or more of Ni with a thickness of 10 to 100Å, and non-magnetic metallic thin-film layers mainly composed of Cu having a thickness of 10 to 25Å, both of the two kinds of layers being laminated.

    摘要翻译： 一种磁阻材料，其特征在于，包括厚度为10〜100的主要由Co构成的第1磁性薄膜层，以及主要由厚度为10〜100的NiXFeYCoZ构成的第2磁性薄膜层， 通过夹在其间的非磁性金属薄膜层交替层压，其主要由厚度为10至35埃的Cu构成，其中X，Y和Z为0.6，X = 0.9,0 以及主要由50原子％以上的Ni构成的第二磁性薄膜层，厚度为10〜100个，其中，层数 通过主要由厚度为10〜35的Cu构成的非磁性金属薄膜层和厚度为10〜25的主要由Cu构成的非磁性金属薄膜层交替层叠， 这两种层都是层压的，非磁性的 主要由含有50原子％以上的Ni的Ni-Co构成的厚度为10〜100的金属薄膜层和主要由厚度为10〜25的Cu构成的非磁性金属薄膜层， 这两种层都被层叠。