公开(公告)号：EP0993048A3

公开(公告)日：2000-06-07

申请号：EP99117485.5

申请日：1999-09-10

申请人： Matsushita Electronics Corporation

发明人： Ishida, Masahiro ,  Nakamura, Shinji ,  Orita, Kenji ,  Imafuji, Osamu ,  Yuri, Masaaki

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L29/04

CPC分类号： H01L33/0075 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L29/045 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/0079

摘要： A semiconductor device includes: a crystalline substrate including a primary surface and a crystal plane provided within the primary surface so as to have a surface orientation different from a surface orientation of the primary surface; a semiconductor layered structure grown over the crystalline substrate; and an active region provided at a portion in the semiconductor layer structure above the crystal plane.

公开(公告)号：EP0997996A2

公开(公告)日：2000-05-03

申请号：EP99120838.0

申请日：1999-10-25

申请人： Matsushita Electronics Corporation

发明人： Nakamura, Shinji ,  Yuri, Masaaki ,  Orita, Kenji

IPC分类号： H01S5/323 ,  H01L33/00

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01S5/32341

摘要： A semiconductor device includes a substrate, a multi-layer structure provided on the substrate, a first-conductive-type etch stop layer of a III nitride provided on the multi-layer structure, and a second-conductive-type first semiconductor layer of a III nitride provided on the etch stop layer. A molar fraction of Al is lower in a composition of the III nitride included in the first semiconductor layer than in a composition of the III nitride included in the etch stop layer.

摘要翻译： 半导体器件包括衬底，设置在衬底上的多层结构，设置在多层结构上的III族氮化物的第一导电型蚀刻停止层和第二导电型第一半导体层， 提供在蚀刻停止层上的III族氮化物。 包含在第一半导体层中的III族氮化物的组成中Al的摩尔分数低于蚀刻停止层中包含的III族氮化物的组成。

公开(公告)号：EP0951077A3

公开(公告)日：1999-12-15

申请号：EP99107202.6

申请日：1999-04-13

申请人： Matsushita Electronics Corporation

发明人： Ishida, Masahiro ,  Yuri, Masaaki ,  Imafuji, Osamu ,  Hashimoto, Tadao ,  Orita, Kenji

IPC分类号： H01L33/00 ,  H01L21/205

CPC分类号： H01L33/025 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02658 ,  H01L33/0075

摘要： A method for growing a nitride compound semiconductor according to the present invention includes the step of growing a compound semiconductor expressed by a general formula Al x Ga 1-x N (where 0≦x≦1) or ln y Al z Ga 1-y-z N (where 0