摘要:
A flash memory comprises a cell matrix, in which rewritable nonvolatile memory cells (591ij) are arranged at intersections between a plurality of word lines (WLi) and a plurality of bit lines (BLi), and also comprises row decoders (587) for applying specified voltage selectively to the word lines (WLi) during writing or reading. The flash memory further comprises: switch circuits (590i) that are located between the cell matrix and the row decoder (587) in association with the word lines, and that enter a cutoff state when the word lines are set to negative voltage and enter a conducting state on any other occasion; negative-voltage bias circuits (592) whose negative-voltage output terminals (554) are connected to the word lines (WLi), and that apply the voltage output of a negative power supply to the word lines in response to a clock pulse (CLK) ; and clock pulse control circuits (593, 594) for causing the clock pulse (CLK) to be supplied to the negative-voltage bias circuit when it is detected during erasing that the word lines (WLi) are selected. The word lines (WLi) are divided into a plurality of groups and the clock pulse control circuits (593, 594) are operable to cause the clock pulse (CLK) to be supplied to each of the negative-voltage bias circuits connected to the selected word lines in a group when any word lines in the group are selected.
摘要:
A negative-voltage bias circuit is provided which comprises: a capacitor (550) having first and second terminals (550B, 550A) ; a first p-channel MIS field-effect transistor (551) whose drain is connected to a negative-voltage output terminal (554) and whose gate and source are connected to the first terminal (550B) of the capacitor (550); and a second p-channel MIS field-effect transistor (552) whose drain is connected to the source of the first p-channel MIS field effect transistor (551), whose gate is connected to the negative-voltage output terminal (554), and whose source is provided with a negative voltage (VBB). The first p-channel MIS field-effect transistor (551) is a depletion-type p-channel MIS field-effect transistor. In operation of the circuit, application to the second terminal (550A) of a series of clock pulses (CLK) causes a potential of the negative-voltage output terminal (554) to tend towards the negative voltage (VBB).
摘要:
A hot-swappable point-to-point connection between high speed transmitter (28) on transmitter card (22) and high speed receiver (32) on receiver card (24) is provided. Transmitter card (22) and receiver card (24) can be inserted into backplane (26) forming connection (36) between transmitter (28) and receiver (32). Power indicator (64) on transmitter card (22) indicates if power is applied to transmitter card (22). Receiver switch (60) on receiver card (24) has control input (62) connected to power indicator (64) when both receiver card (24) and transmitter card (22) are inserted in backplane (26). Receiver switch (60) enables receiver (32) when control input (62) is asserted. Likewise, second power indicator (54) on receiver card (24) connects to control input (52) of transmitter switch (50) on transmitter card (22).
摘要:
A hot-swappable point-to-point connection between high speed transmitter (28) on transmitter card (22) and high speed receiver (32) on receiver card (24) is provided. Transmitter card (22) and receiver card (24) can be inserted into backplane (26) forming connection (36) between transmitter (28) and receiver (32). Power indicator (64) on transmitter card (22) indicates if power is applied to transmitter card (22). Receiver switch (60) on receiver card (24) has control input (62) connected to power indicator (64) when both receiver card (24) and transmitter card (22) are inserted in backplane (26). Receiver switch (60) enables receiver (32) when control input (62) is asserted. Likewise, second power indicator (54) on receiver card (24) connects to control input (52) of transmitter switch (50) on transmitter card (22).
摘要:
A logic circuit capable of suppressing occurrence of wraparound of signals. capable of reducing power consumption, and in addition achieving a reduction of a circuit scale and an improvement of an operating speed and a full adder using the same, wherein provision is made of an exclusive-OR generation circuit (12) for receiving a first logic signal A and a second logic signal B taking a logic "1" or "0" and generating the exclusive-OR of the first logic signal A and the second logic signal B, a dual signal generation circuit (11) for receiving the first logic signal A and the second logic signal B and generating the dual signal of the exclusive-OR of the first logic signal A and the second logic signal B. and an interpolation circuit (13) for compulsorily setting the output level of the dual signal at the level of the logic "1" when the output level of the exclusive-OR is the logic "0", while compulsorily setting the output level of the exclusive-OR at the level of the logic "0" when the output level of the dual signal is the logic "1",
摘要:
La présente invention concerne le domaine des équipements de traitement de données comprenant éventuellement, dans certaines applications un ensemble d'unités de traitement à commandes communes et a notamment pour objet un dispositif de traitement de deux informations binaires A et B en vue de l'obtention d'une conjonction ou d'une disjonction de ces valeurs et/ou de leur complémentaire, les deux informations binaires A et B étant stockées respectivement dans des points mémoire semi-statique Ga et Gb appartenant ou non à un même registre à décalage, chacun de ces points mémoire comportant deux inverseurs I1 et I2 installés dans le même sens de rotation, la sortie de I1 étant connectée à l'entrée de I2 à travers un interrupteur TM1 et la sortie de I2 étant connectée à l'entrée de I1 à travers un interrupteur TM2, la tension en sortie de I2 étant représentative de l'information binaire du point, caractérisé en ce qu'il comporte des moyens (Tc) de commutation commandés aptes à connectés l'entrée de l'un des inverseurs (I1, I2) du point mémoire Ga à l'entrée de l'un des inverseurs (I1, I2) du point mémoire Gb, et des moyens de seuillage connectés à l'une au moins des dites entrées des inverseurs.
摘要:
A comparator compares a first data word with a second data word. The comparator includes first stage of two input XOR gates (21A0-21A1), each of which receive one bit of the first word and a corresponding bit of the second word, and output a coincidence detection signal. A first inverter circuit (23) receives a control signal and generates an inverted control signal. A decision circuit (24) receives the inverted control signal and each of the coincidence detection signals, and generates a decision circuit output signal. A two input NAND gate (28) receives the decision circuit output signal and the control signal and generates a comparator output signal. The decision circuit includes an inverter circuit (25) that receives the inverted control signal from the first inverter circuit and a series of transistors (TN0-TNn-1) connected between the inverter circuit output terminal and ground. The gates of the transistor receive the respective coincidence detection signals.
摘要:
La présente invention concerne une porte logique OU-Exclusif à quatre entrées complémentaires deux à deux (A, NA et B, NB) et à deux sorties complémentaires (XOR et NXOR), dont la structure est dite symétrique en ce que la porte présente un temps de propagation identique quelle que soit celui des couples d'entrées qui commute, quelle que soit la nature de la transition, et quel que soit l'état logique du couple d'entrées qui ne commute pas. L'invention permet de réduire encore les écarts du temps de propagation des fronts à travers la porte en supprimant le caractère flottant de certains noeuds. Elle concerne aussi un multiplieur de fréquence comportant un arbre de telles portes OU-Exclusif.