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27 条记录 (耗时 0.012 秒)

    Air-gap type FBAR, method for fabricating the same, and filter and duplexer using the same
    22.
    发明公开
    Air-gap type FBAR, method for fabricating the same, and filter and duplexer using the same 有权
    空气间隙型的薄膜谐振器，其制造方法及其在所述过滤器和双工器使用

    公开(公告)号：EP1523097A3

    公开(公告)日：2007-07-04

    申请号：EP04255782.7

    申请日：2004-09-22

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Song, In-sang ,  Ha, Byeoung-ju ,  Hwang, Jun-sik ,  Park, Yun-kwon

    IPC分类号： H03H3/02

    CPC分类号： H03H9/587 ,  H03H3/02 ,  H03H9/105 ,  H03H9/173 ,  Y10T29/42

    摘要： An air-gap type thin film bulk acoustic resonator (FBAR) and method for fabricating the same. Also disclosed are a filter and a duplexer employing the air-gap type FBAR. The air-gap type FBAR includes: a first substrate (200) having a cavity part (210) at a predetermined region on its upper surface; a dielectric film stacked on the upper part of the first substrate; a first air gap formed between the first substrate and the dielectric film (220); a stacked resonance part (230) including a lower electrode/piezoelectric layer/upper electrode formed on the upper part of the dielectric film; a second substrate (240) having a cavity part at a predetermined region on its lower surface and joined to the first substrate; and a second air gap (250) formed between the stacked resonance part and the second substrate. A thin film of predetermined thickness made of a liquid crystal polymer (LCP) may be used as the dielectric film.

    摘要翻译： 气隙型薄膜体声波谐振器（FBAR）及其制造方法是相同的。 所以圆盘游离缺失是一个滤波器和双工器用人气隙型FBAR。 气隙型FBAR包括：具有在其上表面上的预定区域中的空腔部（210）的第一衬底（200）; 的介电薄膜层叠在第一基板的上部; 所述第一基板和所述电介质的电影（220）之间形成的第一空气间隙; 堆叠谐振部（230）包括下电极/压电体层/上部形成在电介质成膜的上部电极; 一个第二基片（240）在其下表面上的预定区域具有空腔部和接合到所述第一基板; 和第二空气间隙（250）的叠层谐振部和第二基板之间形成。 由液晶聚合物（LCP）的预定厚度的薄膜可被用作电介质成膜。

    Film bulk acoustic wave resonator and manufacturing method thereof
    23.
    发明公开
    Film bulk acoustic wave resonator and manufacturing method thereof 审中-公开
    Dünnschicht-Volumenwellen-Resonator（FBAR）和sein Herstellungsverfahren

    公开(公告)号：EP1746722A2

    公开(公告)日：2007-01-24

    申请号：EP06253526.5

    申请日：2006-07-05

    申请人： Samsung Electronics Co., Ltd.

    发明人： Kim, Duck-hwan ,  Park, Yun-kwon ,  Kim, Chul-soo ,  Sul, Sang-chul ,  Ha, Byeoung-ju ,  Song, In-sang

    IPC分类号： H03H9/17

    CPC分类号： H03H9/172 ,  H03H3/02 ,  H03H9/02015 ,  H03H9/02118

    摘要： A film bulk acoustic resonator includes a substrate (101); a lower electrode (110) formed on top of the substrate (101); a piezoelectric membrane (113) formed on top of the lower electrode (110) and having a crystallographic axis (CC) so inclined as to generate a total reflection when an acoustic wave advances toward the lower electrode (110); and an upper electrode (115) formed on top of the piezoelectric membrane (113). The circumference of the piezoelectric membrane (113) may comprise an enveloping wall (117) which may be patterned on the same layer as that of forming the upper electrode (115).

    摘要翻译： 薄膜体声波谐振器包括基板（101）; 形成在所述基板（101）的顶部上的下电极（110）; 形成在所述下电极（110）的顶部并且具有如下倾斜的结晶轴（CC）的压电膜（113），以便当声波向所述下电极（110）前进时产生全反射; 以及形成在所述压电膜（113）的顶部上的上电极（115）。 压电膜（113）的圆周可以包括可以在与形成上电极（115）的层相同的层上被图案化的包封壁（117）。

    Manufacturing method of a MEMS structure using a porous silicon layer
    24.
    发明公开
    Manufacturing method of a MEMS structure using a porous silicon layer 审中-公开
    Herstellungsverfahrenfüreine MEMS Struktur，die eineporöseSiliziumschicht benutzt

    公开(公告)号：EP1683757A1

    公开(公告)日：2006-07-26

    申请号：EP05024649.5

    申请日：2005-11-11

    申请人： Samsung Electronics Co., Ltd.

    发明人： Lee, Chang-seung ,  Ha, Byeoung-ju

    IPC分类号： B81C1/00

    CPC分类号： B81C1/0092 ,  B81B2201/0214 ,  B81B2201/0271 ,  B81B2201/058 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81C1/00047 ,  B81C1/00952 ,  B81C2201/0115

    摘要： A method of manufacturing a MEMS structure including forming a porous layer having a predetermined thickness on the top surface of a substrate over an area where a cavity is to be formed; forming the cavity by etching the substrate below the porous layer; forming a membrane layer on the top surface to seal the cavity; and forming a structure on the upper side of the membrane layer. After forming a cantilever structure on the membrane layer and etching the membrane layer, a cantilever structure is produced in a floating state over the cavity. Also, at least one inlet hole and outlet hole can be formed in the porous layer and the membrane, thereby providing a sealed fluidic channel.

    摘要翻译： 一种制造MEMS结构的方法，包括在要形成空腔的区域上的衬底顶表面上形成具有预定厚度的多孔层; 通过在多孔层下方蚀刻基底来形成空腔; 在顶表面上形成膜层以密封空腔; 并在膜层的上侧形成结构。 在膜层上形成悬臂结构并蚀刻膜层之后，在空腔上以悬浮状态产生悬臂结构。 此外，可以在多孔层和膜中形成至少一个入口孔和出口孔，从而提供密封的流体通道。

    Monolithic duplexer
    26.
    发明公开
    Monolithic duplexer 有权
    单片双工器

    公开(公告)号：EP1659688A2

    公开(公告)日：2006-05-24

    申请号：EP05024698.2

    申请日：2005-11-11

    申请人： Samsung Electronics Co., Ltd.

    发明人： Park, Yun-kwon ,  Song, In-sang ,  Yun, Seok-chul ,  Hong, Seog-woo ,  Ha, Byeoung-ju ,  Shim, Dong-ha ,  Park, Hae-seok ,  Nam, Kuang-woo ,  Kim, Duck-hwan

    IPC分类号： H03H9/70 ,  H03H9/10 ,  H03H9/58 ,  H03H3/02

    CPC分类号： H03H3/02 ,  H03H9/0571 ,  H03H9/706 ,  Y10T29/42 ,  Y10T29/43 ,  Y10T29/4902 ,  Y10T29/49155

    摘要： A subminiature, high-performance monolithic duplexer is disclosed. The monolithic duplexer includes a substrate (100), a transmitting-end filter (300) formed in a first area on an upper surface of the substrate, a receiving-end filter (400) formed in a second area on the upper surface of the substrate, a packaging substrate (200), bonded on an area on the upper surface of the substrate, for packaging the transmitting-end filter and the receiving-end filter in a sealed state, and a phase shifter (210), formed on one surface of the packaging substrate and connected to the transmitting-end filter and the receiving-end filter, respectively, for intercepting a signal inflow between the transmitting-end filter and the receiving-end filter.

    摘要翻译： 公开了一种超小型高性能单片双工器。 单片双工器包括：衬底（100），形成在衬底的上表面上的第一区域中的透射端过滤器（300）;形成在第二区域中的接收端过滤器（400） 基板，封装在所述基板的上表面上的区域上的封装基板（200），用于将所述发送端滤波器和所述接收端滤波器封装在密封状态;以及移相器（210），形成在一个 分别连接到发送端滤波器和接收端滤波器，用于截取发送端滤波器与接收端滤波器之间的信号流入。

    Monolithic rf filter
    27.
    发明公开
    Monolithic rf filter 审中-公开
    单片射频滤波器

    公开(公告)号：EP1657817A2

    公开(公告)日：2006-05-17

    申请号：EP05024448.2

    申请日：2005-11-09

    申请人： Samsung Electronics Co., Ltd.

    发明人： Park, Yun-kwon ,  Kim, Duck-hwan 505-803, Cheonggu Apt. ,  Nam, Kuang-woo Samsung Adv. Inst. of Technology ,  Song, In-sang ,  Yun, Seok-chul Samsung Adv. Inst. of Technology ,  Ha, Byeoung-ju ,  Kim, Jong-seok

    IPC分类号： H03H9/58 ,  H03H9/02

    CPC分类号： H03H9/0542 ,  H03H9/542 ,  H03H9/564 ,  H03H9/566

    摘要： A filter formed of film bulk acoustic resonators (40,42,44,48,54,56,60) has a topology that enables a trimming inductor (58) to be fabricated on the same substrate as the resonator arrays. The entire filter can be fabricated on a single chip, utilizing only integrated circuit processes. In an exemplary embodiment, a pair of shunt resonators (54,56) each have one electrode connected to series-connected resonators. The other electrodes of the two shunt resonators are connected in common to one another. The trimming inductor (58) is connected between the common electrode and ground potential. A third shunt resonator (60) is connected between the series-connected resonators and ground potential.

    摘要翻译： 由薄膜体声共振器（40,42,44,48,54,56,60）形成的滤波器具有能够将修整电感器（58）制造在与谐振器阵列相同的衬底上的拓扑结构。 整个滤波器可以在单个芯片上制造，仅利用集成电路工艺。 在示例性实施例中，一对并联谐振器（54,56）各自具有连接到串联谐振器的一个电极。 两个并联谐振器的其他电极彼此共同连接。 修整电感器（58）连接在公共电极和地电位之间。 第三并联谐振器（60）连接在串联连接的谐振器和地电位之间。