公开(公告)号：EP1398826A4

公开(公告)日：2006-09-06

申请号：EP02738770

申请日：2002-06-19

申请人： OHMI TADAHIRO ,  TOKYO ELECTRON LTD

发明人： OHMI TADAHIRO ,  HIRAYAMA MASAKI ,  GOTO TETSUYA

IPC分类号： H01L21/31 ,  C23C16/511 ,  H01J37/32 ,  H01L21/3065 ,  H05H1/46

CPC分类号： H01J37/3222 ,  H01J37/32192

摘要： Installed in a processing vessel (22) is a mounting block (24) on which a semiconductor wafer (W) is mounted. Microwaves, which are generated by a microwave generator (76), are introduced into a processing vessel (22) through a planar antenna member (66). The planar antenna member (66) has a plurality of slits (84) arranged along a plurality of circumferences, the circumferences forming non-concentric circles. The plasma density distribution in the radial direction of the planar antenna member (66) becomes uniform.

公开(公告)号：EP1001326A4

公开(公告)日：2004-11-17

申请号：EP99922553

申请日：1999-05-27

申请人： FUJIKIN KK ,  TOKYO ELECTRON LTD ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  KAGATSUME SATOSHI ,  IKEDA NOBUKAZU ,  NISHINO KOUJI ,  YOSHIKAWA KAZUHIRO ,  IDETA EIJI ,  DOHI RYOUSUKE ,  UNO TOMIO ,  YAMAJI MICHIO

IPC分类号： F17D1/00 ,  G05D7/06 ,  G05D16/20

CPC分类号： G05D7/0635 ,  Y10T137/7759 ,  Y10T137/7761

摘要： A gas supply equipment comprising a gas control valve (2), an orifice accommodating valve (9) provided downstream of the control valve (2), a pressure detector (3) provided between the control valve (2) and the orifice accommodating valve (9), an orifice (5) provided downstream of the valve mechanism of the orifice accommodating (9) and an arithmetic and control unit which calculates a flow rate as Qc = KP1 (K; constant) from a detected pressure P1 by the pressure detector (3) and outputs to the drive unit of the control valve (2) the difference between a flow rate instruction signal Qs and a calculated flow rate Qc as a control signal Qy.

公开(公告)号：EP0931941A4

公开(公告)日：2003-05-21

申请号：EP98937820

申请日：1998-08-13

申请人： FUJIKIN KK ,  TOKYO ELECTRON LTD ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  KAGAZUME TETU ,  SUGIYAMA KAZUHIKO ,  FUKADA OSAMU ,  OZAWA SUSUMU ,  SATOU YOSHIHIRO ,  DOHI RYOUSUKE ,  UNO TOMIO ,  NISHINO KOUJI ,  FUKUDA HIROYUKI ,  IKEDA NOBUKAZU ,  YAMAJI MICHIO

IPC分类号： G01F1/40 ,  G05D7/01 ,  F15D1/08 ,  B23P15/16 ,  G01F1/42

CPC分类号： G01F1/40 ,  G05D7/0186

摘要： An orifice for use in pressure type flow rate control unit which can be manufactured easily and inexpensively, and which has a linear relationship between pressure P1 upstream of the orifice and the flow rate over a wide range of pressure ratio P2/P1 (where P1 is the pressure upstream of the orifice and P2 is the pressure downstream of same), with the flow rate characteristic relationship among a plurality of orifices being easily adjustable. More specifically, the orifice has a structure comprising a tapered inlet section (1) wherein one open end of a bottom hole (6) bored into a main body member (D) is cut into a shape like the mouthpiece of a trumpet, and a short drawn parallel part (2) continuing therefrom; and a short expanded tapered section (3) formed by expanding the diameter of the other open end of the bottom hole (6) and continuing from the drawn parallel part (2), and an expanded parallel part (4) continuing therefrom.

公开(公告)号：EP1035457A4

公开(公告)日：2001-10-17

申请号：EP99935120

申请日：1999-08-09

申请人： FUJIKIN KK ,  TOKYO ELECTRON LTD ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  IIDA SEIICHI ,  KAGATSUME SATOSHI ,  HIROSE JUN ,  NISHINO KOUJI ,  IKEDA NOBUKAZU ,  YAMAJI MICHIO ,  DOHI RYOUSUKE ,  YOSHIKAWA KAZUHIRO ,  KOYOMOGI MUTSUNORI ,  UNO TOMIO ,  IDETA EIJI ,  HIROSE TAKASHI

IPC分类号： G05D7/06 ,  F16K37/00

CPC分类号： G05D7/0635 ,  Y10T137/0396 ,  Y10T137/7759 ,  Y10T137/7761 ,  Y10T137/8326

摘要： An orifice plugging sensor for a flow-rate controller having an orifice, comprising a memory (M) in which is stored reference pressure decrease data Y(t) about the upstream-side pressure P1 measured when the flow rate is changed from a high preset flow rate QSH to a low preset flow rate QSL under the condition that an orifice (2) does not plug, a pressure sensor (14) for measuring pressure decrease data P(t) about the upstream-side pressure P1 measured when the flow rate is changed from the high preset flow rate QSH to the low preset flow rate QSL under the condition that the orifice is in an actual state, a central processing unit (CPU) for comparison operation of the pressure decrease data P(t) and the reference pressure decrease data Y(t), and an alarm circuit (46) for giving an alarm of a plugging when the pressure decrease data P(t) differs from the reference pressure decrease data by a predetermined degree.

公开(公告)号：EP2184771A4

公开(公告)日：2010-10-20

申请号：EP08792453

申请日：2008-08-14

申请人： UNIV TOHOKU NAT UNIV CORP ,  TOKYO ELECTRON LTD ,  UBE INDUSTRIES ,  UBE NITTO KASEI CO

发明人： OHMI TADAHIRO ,  MATSUOKA TAKAAKI ,  INOKUCHI ATSUTOSHI ,  WATANUKI KOHEI ,  KOIKE TADASHI ,  ADACHI TATSUHIKO

IPC分类号： H01L21/312 ,  H01L21/768 ,  H01L23/522

CPC分类号： H01L23/5329 ,  H01L21/0212 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3121 ,  H01L21/316 ,  H01L21/76807 ,  H01L21/76819 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/7684 ,  H01L21/76897 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP1879431A4

公开(公告)日：2009-10-28

申请号：EP06730224

申请日：2006-03-28

申请人： UNIV TOHOKU ,  TOKYO ELECTRON LTD ,  TOYOTA JIDOSHOKKI KK

发明人： OHMI TADAHIRO ,  MATSUOKA TAKAAKI ,  NAKAYAMA SHOZO ,  ITO HIRONORI

IPC分类号： H05B33/10 ,  C23C14/12

CPC分类号： C23C14/564 ,  C23C14/12 ,  C23C14/228 ,  C23C14/24 ,  H01L51/0008 ,  H01L51/0081 ,  H01L51/56

公开(公告)号：EP1741802A4

公开(公告)日：2009-08-19

申请号：EP05727877

申请日：2005-03-29

申请人： OHMI TADAHIRO ,  TOKYO ELECTRON LTD

发明人： OHMI TADAHIRO ,  MATSUOKA TAKAAKI

IPC分类号： C23C14/24 ,  C23C14/12 ,  C23C14/54 ,  C23C14/56 ,  C23C16/448 ,  F28F13/08 ,  F28F27/02 ,  H05B33/10 ,  H05B33/28

CPC分类号： C23C14/541 ,  C23C14/12 ,  C23C14/228 ,  C23C14/243 ,  C23C14/564 ,  F28D2021/0077 ,  F28F9/026 ,  F28F13/08

摘要： Disclosed are a film-forming apparatus and a film-forming method which enable to form a uniform film at a high film-forming rate while eliminating the waste of raw materials. In such an apparatus and method, a vaporized film-forming material is made to reach the surface of a substrate by the flow of a transport gas, so that the film-forming conditions can be controlled by the flow of the gas and a uniform film can be deposited on a substrate having a large area. Namely, by directing the vaporized raw material to the substrate, a uniform film can be formed while improving the film-forming rate.

公开(公告)号：EP1594142A4

公开(公告)日：2009-08-05

申请号：EP04707661

申请日：2004-02-03

申请人： TOKYO ELECTRON LTD ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  TAKAHASHI ICHIRO ,  YAMADA ATSUHIKO ,  SAKURAI HIROYUKI

IPC分类号： C23C14/06 ,  C01G35/00 ,  C23C14/08 ,  H01B3/00 ,  H01B3/12 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L29/788 ,  H01L29/792 ,  H01B19/00 ,  H01L27/10

CPC分类号： H01L21/31691 ,  C01G35/00 ,  C01G35/006 ,  C01P2006/42 ,  C23C14/088

摘要： The relative dielectric constant of a ferroelectric film of Sr2(Ta1-xNbx)O7 (0

公开(公告)号：EP1622194A4

公开(公告)日：2009-04-08

申请号：EP04727121

申请日：2004-04-13

申请人： OHMI TADAHIRO ,  TOKYO ELECTRON LTD

发明人： OHMI TADAHIRO ,  TERAMOTO AKINOBU

IPC分类号： H01L21/283 ,  H01L21/316 ,  H01L21/04 ,  H01L21/318 ,  H01L21/336 ,  H01L29/78

CPC分类号： H01L21/049

摘要： A semiconductor device comprising a substrate of SiC provided with an insulating film through plasma treatment. Rare gas is incorporated in the insulating film. Preferably, at least one of krypton (Kr), argon (Ar) and xenon (Xe) is used as the rare gas. A combination of oxygen gas and krypton (Kr) is especially preferred.

摘要翻译： 一种半导体器件，包括通过等离子体处理提供有绝缘膜的SiC衬底。 稀有气体被纳入绝缘薄膜中。 优选地，使用氪（Kr），氩（Ar）和氙（Xe）中的至少一种作为稀有气体。 氧气和氪（Kr）的组合是特别优选的。

公开(公告)号：EP1434253A4

公开(公告)日：2006-10-04

申请号：EP02800747

申请日：2002-10-02

申请人： OHMI TADAHIRO ,  TOKYO ELECTRON LTD

发明人： OHMI TADAHIRO ,  SHIGETOSHI SUGAWA

IPC分类号： H01L21/28 ,  H01L21/316 ,  H01L21/336 ,  H01L29/04 ,  H01L29/51 ,  H01L29/78 ,  H01L29/786 ,  H01L21/00

CPC分类号： H01L29/518 ,  H01L21/28202 ,  H01L29/045 ,  H01L29/78

摘要： A semiconductor device in which field-effect transistors are fabricated on the surface of silicon substantially having direction of crystal plane. The field-effect transistors are so arranged on the silicon surface that the direction from the source region of each field-effect transistor to the drain region thereof substantially agrees with the direction of crystal plane.