-
公开(公告)号：EP1979999A2
公开(公告)日：2008-10-15
申请号：EP06849249.5
申请日：2006-12-26
IPC分类号： H01S5/00
CPC分类号： H01S5/0262 , G02B6/4214 , G02B6/4246 , H01L31/03046 , H01L31/105 , H01L31/107 , H01L31/153 , H01L31/1844 , H01S5/005 , H01S5/0078 , H01S5/02248 , H01S5/02284 , H01S5/026 , H01S5/0264 , H01S5/0267 , H01S5/1085 , H01S5/18 , H01S5/2022 , H01S5/4012 , H01S5/4056 , Y02E10/544
摘要： A laser and detector integrated on corresponding epitaxial layers of a single chip cooperate with on-chip and/or external optics to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels. A monitoring photodetector is fabricated in the detector epitaxy adjacent one end of the laser.
-
公开(公告)号：EP1894280A2
公开(公告)日：2008-03-05
申请号：EP06785144.4
申请日：2006-06-20
CPC分类号： H01S5/0201 , B82Y20/00 , H01S5/0042 , H01S5/0203 , H01S5/0262 , H01S5/0264 , H01S5/028 , H01S5/1039 , H01S5/18 , H01S5/22 , H01S5/32341 , H01S5/34333
摘要： A process for fabricating lasers capable of emitting blue light wherein a GaN wafer is etched to form laser waveguides and mirrors using a temperature of over 500 °C and an ion beam in excess of 500 V in CAIBE.
摘要翻译： 一种用于制造能够发射蓝光的激光器的方法，其中在CAIBE中使用超过500℃的温度和超过500V的离子束蚀刻GaN晶片以形成激光波导和反射镜。
-
公开(公告)号：EP1735884A2
公开(公告)日：2006-12-27
申请号：EP05744345.9
申请日：2005-04-14
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , G02B6/12002 , G02B6/12004 , G02B6/122 , G02B6/131 , G02B2006/12104 , G02F1/01708 , G02F2202/102 , H01S5/005 , H01S5/0071 , H01S5/026 , H01S5/0265 , H01S5/028 , H01S5/0683 , H01S5/1014 , H01S5/1017 , H01S5/1021 , H01S5/1032 , H01S5/22 , H01S5/34306
摘要： A laser (40) and electroabsorption modulator (EAM) (44) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure (44). Strong optical coupling between the laser and the EAM (44) is realized by using two 45-degree turning mirrors (52 and 66) to route light vertically from the laser waveguide to the EAM waveguide (44). A directional angled etch process is used to form the two angled facets.
-
公开(公告)号：EP1886388B1
公开(公告)日：2015-03-18
申请号：EP06771742.1
申请日：2006-06-01
CPC分类号： H01S5/028 , H01S5/0203 , H01S5/0286 , H01S5/0287 , H01S5/1082 , H01S5/1085 , H01S5/18 , H01S5/22 , H01S2301/166
-
公开(公告)号：EP2643907A1
公开(公告)日：2013-10-02
申请号：EP11838552.5
申请日：2011-10-25
发明人： BEHFAR, Alex , STAGARESCU, Cristian
IPC分类号： H01S5/20
CPC分类号： H01S5/10 , B82Y20/00 , H01S5/1003 , H01S5/1039 , H01S5/1082 , H01S5/22 , H01S5/34313
摘要： Long semiconductor laser cavities are placed in relative short length chips through the use of total internal reflection (TIR) surfaces formed through etched facets. In one embodiment, a laser cavity is formed along the perimeter edges of a rectangular semiconductor chip by using three 45 angled TIR facets to connect four legs of a ridge or buried heterostructure (BH) waveguide that defines the laser cavity. In other embodiments, even more TIR facets and waveguide legs or sections are employed to make even longer laser cavities in the shape of rectangular or quadrilateral spirals. These structures are limited in the spacing of adjacent waveguide sections, which if too small, can cause undesirable coupling between the sections. However, use of notches etched between the adjacent sections have been shown to decrease this coupling effect.
-
公开(公告)号：EP1854189A2
公开(公告)日：2007-11-14
申请号：EP06735363.1
申请日：2006-02-17
发明人： BEHFAR, Alex, A.
IPC分类号： H01S5/00
CPC分类号： H01S5/323 , G02F1/17 , H01S5/0042 , H01S5/0201 , H01S5/0202 , H01S5/0203 , H01S5/028 , H01S5/0282 , H01S5/16 , H01S5/22 , H01S5/2214
摘要： Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.
-
公开(公告)号：EP1668749A2
公开(公告)日：2006-06-14
申请号：EP04780438.0
申请日：2004-08-31
CPC分类号： H01S5/0625 , B82Y20/00 , H01S5/0264 , H01S5/06256 , H01S5/0655 , H01S5/1017 , H01S5/1021 , H01S5/1039 , H01S5/125 , H01S5/141 , H01S5/22 , H01S5/343 , H01S5/34313
摘要： A single-mode, etched facet distributed Bragg reflector laser includes an A1GalnAs/InP laser cavity (70), a front mirror stack (32) with multiple Fabry-Perot elements (60, 62, 64, 66), a rear DBR reflector (68), and rear detector. The front mirror stack elements and the rear reflector elements include input and output etched facets (72, 76), and the laser cavity is an etched ridge cavity, all formed from an epitaxial wafer (30) by a two-step lithography and CAIBE process.
-
公开(公告)号：EP1552587A1
公开(公告)日：2005-07-13
申请号：EP03792940.3
申请日：2003-06-30
IPC分类号： H01S3/083
CPC分类号： H01S5/1071 , H01S5/0265 , H01S5/062 , H01S5/065 , H01S5/1039 , H01S5/40 , H01S5/50
摘要： An integrated semiconductor laser device capable of emitting light of selected wavelengths includes multiple ring lasers of different cavity lengths coupled in series or in parallel to a common output to produce an output beam having a wavelength corresponding to the selected ring lasers.
摘要翻译： 能够发射选定波长的光的集成半导体激光器装置包括与公共输出串联或并联耦合的不同谐振腔长度的多个环形激光器，以产生具有对应于所选环形激光器的波长的输出光束。
-
公开(公告)号：EP1428245A1
公开(公告)日：2004-06-16
申请号：EP02747946.8
申请日：2002-07-15
IPC分类号： H01L21/00
CPC分类号： G02B6/12002 , B81B2201/047 , B81C99/008 , B81C2201/0159 , G02B6/13 , G02B6/4204 , G02B6/4249 , G03F7/0037 , Y10S438/948 , Y10S438/949 , Y10S438/95
摘要： Three-dimensional structures of arbitrary shape are fabricated on the surface of a substrate (10) through a series of processing steps wherein a monolithic structure is fabricated in successive layers. A first layer (14) of photoresist material is spun onto a substrate (10) surface (18) and is exposed (26) in a desired pattern corresponding to the shape of a final structure, at a corresponding cross-sectional level in the structure. The layer is not developed after exposure; instead, a second layer (30) of photoresist material is deposited and is also exposed (32) in a desired pattern. Subsequent layers (40,52,64) spun onto the top surface of prior layers (14,30) and exposed (44,54,66), and upon completion of the succession of layers each defining corresponding levels of the desired structure, the layers are all developed at the same time leaving the three-dimensional structure (22).
-
-
-
-
-
-
-
-
搜索结果
29 条记录 (耗时 0.012 秒)
