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350 条记录 (耗时 0.019 秒)

    LEUCHTDIODE
    22.
    发明公开
    LEUCHTDIODE 审中-公开
    发光二极管

    公开(公告)号：EP2817833A1

    公开(公告)日：2014-12-31

    申请号：EP13705491.2

    申请日：2013-02-22

    申请人： LIMO Patentverwaltung GmbH & Co. KG

    发明人： MIKHAILOV, Aleksei

    IPC分类号： H01L33/00 ,  H01L33/02 ,  H01L21/268

    CPC分类号： H01L33/025 ,  H01L21/268 ,  H01L33/0095 ,  H01L2933/0058 ,  H01L2933/0091

    摘要： The invention relates to a light-emitting diode comprising a body (1) which consists at least partly of a semiconductor material. The body (1) has an active layer (2), in which light can be generated, and at least one outlet surface (3) from which the light that is generated in the active layer (2) can exit. A plurality of structures (5) is provided in the body (1), and at least some of the light exiting the active layer (2) can be scattered at said structures before reaching the outlet surface (3).

    Light emitting device
    23.
    发明公开
    Light emitting device 有权
    发光装置

    公开(公告)号：EP2804226A1

    公开(公告)日：2014-11-19

    申请号：EP14167223.8

    申请日：2014-05-06

    申请人： LG Innotek Co., Ltd.

    发明人： Choi, Jae Hoon ,  Choi, Young Jae

    IPC分类号： H01L33/02 ,  H01L33/12 ,  H01L33/00

    CPC分类号： H01L33/325 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/025 ,  H01L33/12

    摘要： Disclosed is a light emitting device including a first conductivity type semiconductor layer (9) on a substrate (1), a control layer (7) interposed between the substrate (1) and the first conductivity type semiconductor layer (9). The control layer includes a first nitride semiconductor layer including aluminum (Al), a plurality of nano-structures (17) on the first nitride semiconductor layer (15), and a second nitride semiconductor layer disposed (19) on the first nitride semiconductor layer (15) and including gallium (Ga).

    摘要翻译： 公开了一种发光器件，包括衬底（1）上的第一导电类型半导体层（9），介于衬底（1）和第一导电类型半导体层（9）之间的控制层（7）。 控制层包括包含铝（Al）的第一氮化物半导体层，在第一氮化物半导体层（15）上的多个纳米结构（17）以及在第一氮化物半导体层（15）上布置（19）的第二氮化物半导体层 （15）并包括镓（Ga）。

    Light emitting device
    24.
    发明公开
    Light emitting device 有权
    发光装置

    公开(公告)号：EP2802019A1

    公开(公告)日：2014-11-12

    申请号：EP14166548.9

    申请日：2014-04-30

    申请人： LG Innotek Co., Ltd.

    发明人： Choi, Jae Hoon ,  Choi, Young Jae

    IPC分类号： H01L33/02 ,  H01L33/20 ,  H01L33/22

    CPC分类号： H01L33/12 ,  H01L33/025 ,  H01L33/22 ,  H01L33/24

    摘要： Disclosed is a light emitting device including a substrate; a buffer layer on the substrate; a first conductive layer on the buffer layer; an active layer on the first conductive layer; and a third conductive semiconductor layer on the active layer, wherein the first conductive layer includes a first conductive semiconductor layer including a first dopant having a tensile stress, and a second conductive semiconductor layer provided on the first conductive semiconductor layer and including a second dopant having a compressive stress.

    摘要翻译： 公开了一种包括衬底的发光器件; 衬底上的缓冲层; 在缓冲层上的第一导电层; 在第一导电层上的有源层; 以及在所述有源层上的第三导电半导体层，其中所述第一导电层包括第一导电半导体层和第二导电半导体层，所述第一导电半导体层包括具有拉伸应力的第一掺杂剂，所述第二导电半导体层设置在所述第一导电半导体层上， 压力。

    NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT
    29.
    发明公开
    NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT 有权
    NITRID-HALBLEITER-LICHTEMISSIONSELEMENT

    公开(公告)号：EP2270879A4

    公开(公告)日：2013-08-07

    申请号：EP09724676

    申请日：2009-03-23

    申请人： PANASONIC CORP ,  RIKEN

    发明人： TAKANO TAKAYOSHI ,  TSUBAKI KENJI ,  HIRAYAMA HIDEKI ,  FUJIKAWA SACHIE

    IPC分类号： H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32

    CPC分类号： H01L33/12 ,  H01L33/02 ,  H01L33/025 ,  H01L33/32

    摘要： The nitride semi-conductive light emitting layer in this invention comprises a single crystal substrate 1 for epitaxial growth, a first buffer layer 2, an n-type nitride semi-conductive layer 3, a second buffer layer 4, a third buffer layer 5, a light emitting layer 6 , and a p-type nitride semi-conductive layer 7. The first buffer layer 2 is laminated to a top side of the single crystal substrate 1 . The n-type nitride semi-conductive layer 3 is laminated to a top side of the first buffer layer 2. The third buffer layer 5 is laminated to a top side of the n-type nitride semi-conductive layer 3 with the second buffer layer 4 being interposed therebetween. The light emitting layer 6 is laminated to a top side of the third buffer layer 5. The p-type nitride semi-conductive layer 7 is laminated to a top side of the light emitting layer 6. The third buffer layer 5 serves as a planarized base for growth of the light emitting layer 6 so as to reduce a threading dislocation and a residual distortion in the light emitting layer 6 . This nitride semi-conductive light emitting device reduces a piezoelectric field in the light emitting layer by exploiting carriers generated in the third buffer layer 5. The third buffer layer 5 is doped with an Si impurity serving as a donor.

    摘要翻译： 本发明的氮化物半导体发光层包括用于外延生长的单晶衬底1，第一缓冲层2，n型氮化物半导体层3，第二缓冲层4，第三缓冲层5， 发光层6和p型氮化物半导电层7.第一缓冲层2层压到单晶衬底1的顶侧。 n型氮化物半导体层3层叠在第一缓冲层2的上侧。第三缓冲层5与第二缓冲层层叠在n型氮化物半导体层3的顶面 4插入其间。 发光层6被层压到第三缓冲层5的顶侧.p型氮化物半导体层7层压到发光层6的顶侧。第三缓冲层5用作平坦化 用于发光层6的生长的基底，以便减少发光层6中的穿透位错和残留变形。 该氮化物半导体发光器件通过利用在第三缓冲层5中产生的载流子来减少发光层中的压电场。第三缓冲层5掺杂有用作供体的Si杂质。