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199 条记录 (耗时 0.015 秒)

    VARIABLE MAGNETIZATION MACHINE CONTROLLER
    36.
    发明公开
    VARIABLE MAGNETIZATION MACHINE CONTROLLER 审中-公开
    VARIABLE MAGNETISIERUNGSMASCHINENSTEUERUNG

    公开(公告)号：EP3014757A4

    公开(公告)日：2017-08-16

    申请号：EP13887607

    申请日：2013-06-28

    申请人： NISSAN MOTOR ,  WISCONSIN ALUMNI RES FOUND

    发明人： FUKUSHIGE TAKASHI ,  YU CHEN-YEN ,  LORENZ ROBERT D

    IPC分类号： H02P6/00 ,  H02P6/08 ,  H02P21/00 ,  H02P21/12 ,  H02P21/13 ,  H02P21/14 ,  H02P21/28 ,  H02P23/14

    CPC分类号： H02P6/08 ,  H02P21/0003 ,  H02P21/0089 ,  H02P21/12 ,  H02P21/13 ,  H02P21/141 ,  H02P21/28

    摘要： A variable magnetization machine controller has a current command module, a magnetization module and a reducing current module. The current command module computes a vector current command in a dq axis based on a torque command. The magnetization module applies a magnetization control pulse to a d-axis current of the vector current command. Thus, the reducing current module applies a reducing current to a q-axis current of the vector current command based on the torque command and one of an estimated torque of the variable magnetization machine and a measured torque of the variable magnetization machine.

    摘要翻译： 可变磁化机控制器具有电流指令模块，磁化模块和减少电流模块。 电流指令模块基于转矩指令计算dq轴上的矢量电流指令。 磁化模块将磁化控制脉冲施加到矢量电流指令的d轴电流。 因此，减小电流模块基于转矩命令以及可变磁化机的估计转矩和可变磁化机的测量转矩之一向矢量电流指令的q轴电流施加减小电流。

    HIGH EFFICIENCY INTERSUBBAND SEMICONDUCTOR LASERS
    37.
    发明公开
    HIGH EFFICIENCY INTERSUBBAND SEMICONDUCTOR LASERS 审中-公开
    高性能带间半导体激光器

    公开(公告)号：EP2002518A4

    公开(公告)日：2017-03-29

    申请号：EP07757323

    申请日：2007-02-22

    申请人： WISCONSIN ALUMNI RES FOUND

    发明人： BOTEZ DAN ,  XU DAPENG P ,  MAWST LUKE J

    IPC分类号： H01S5/00 ,  H01S5/34

    CPC分类号： H01S5/3402 ,  B82Y20/00 ,  H01S5/3406 ,  H01S5/3407 ,  Y10S977/951

    摘要： An intersubband quantum cascade laser structure includes multiple coupled laser stages, wherein each stage has a multilayer structure including an electron injector, an active region with at least one quantum well, and an electron reflector. Electrons injected from the injector into the active region at a high energy level relax to a lower energy level with the emission of a photon at, for example, mid-infrared wavelengths. The reflector reflects electrons at the higher energy level at which they were injected and transmits electrons from the lower energy level after emission of a photon. Multiple layers of semiconductor are formed on each side of the multistage structure to provide conduction across the device and to provide optical confinement of the photons emitted.