a first active stack of layers comprising an optical cavity, (17) at least one quantum dot located in said cavity; (17) an upper contact provided above said optical cavity; (23) a lower contact provided below said cavity, (11)
wherein an abrupt material interface defines the whole lateral boundary of said cavity and said cavity is patterned such that it provides two dimensional lateral confinement of photon modes, said upper an lower contacts (11,23) being arranged such that current can flow vertically across the cavity between the two contacts (11,23).
摘要:
A ring cavity laser has a polyhedral structure contoured by a plurality of planes, and includes a ring cavity having reflective faces formed by the planes of the polyhedral structure, and an active medium (21, 117, 421, 521). The ring cavity laser is constructed such that there exists a three-dimensional light path among light paths of the ring cavity through which light pumped in the active medium (21, 117, 421, 521) travels when the light starts at a point on one reflective face, is reflected by each reflective face and returns to the starting point.
摘要:
Optical integrated circuitry, performing various of the functions associated with electronic integrated circuitry, is described. Fabrication, importantly to achieve high circuit chip density - typically in the range of 10⁶ as including both devices and interconnecting guides - is dependent upon device/spacing dimension miniaturization resulting from fabrication in very thin layers. Typical layer thickness as retained in fabricated devices and guides, of a maximum of the order of a 1/2 wavelength for relevant photon flux, results in limitation in cross-talk to permit device design rules of one or a few wavelengths.
摘要:
A semiconductor light-emitting device having a plurality of semiconductor rods (9), each of which has a pn junction, formed on a semiconductor substrate (3) such that the plurality of semiconductor rods are arranged at a distance substantially equal to an integer multiple of the wavelength of light emitted from said semiconductor rod. With this structure, various novel optical devices such as micro-cavity lasers having an extremely small threshold current and coherent light-emitting devices having no threshold value can be realized.
摘要:
A method for fabricating a nanostructure comprises the steps of growing a first nanowire on a substrate, forming a dielectric layer on the substrate, the dielectric layer surrounding the first nanowire, wherein a thickness of the dielectric layer is smaller than a length of the first nanowire, and removing the first nanowire from the dielectric layer, thereby exposing an aperture in the dielectric layer.
摘要:
In the field of optical networks, a laser, a laser modulation method and a laser combination system are disclosed. The laser (1) includes a gain medium (11), a resonator (12), and a second microring resonator (13), where the resonator (12) includes a first cavity mirror (121), and a second cavity mirror (122), the first cavity mirror (121) is located at one port of the gain medium (11), the second cavity mirror (122) is located at the other port of the gain medium (11), and the second cavity mirror (122) includes a splitter (1221), a first microring resonator (1222), and a reflecting grating (1223). Embodiments of the present invention resolve problems that it is difficult to resolve an optical eye diagram of output by an existing directly modulated laser due to limited performance of the laser during high-speed modulation and that it is difficult to integrate the laser.
摘要:
Disclosed is a light emitting element, which emits light with small power consumption and high luminance. The light emitting element has: a IV semiconductor substrate; two or more core multi-shell nanowires disposed on the IV semiconductor substrate; a first electrode connected to the IV semiconductor substrate; and a second electrode, which covers the side surfaces of the core multi-shell nanowires, and which is connected to the side surfaces of the core multi-shell nanowires. Each of the core multi-shell nanowires has: a center nanowire composed of a first conductivity type III-V compound semiconductor; a first barrier layer composed of the first conductivity type III-V compound semiconductor; a quantum well layer composed of a III-V compound semiconductor; a second barrier layer composed of a second conductivity type III-V compound semiconductor; and a capping layer composed of a second conductivity type III-V compound semiconductor.