公开(公告)号：EP4409640A1

公开(公告)日：2024-08-07

申请号：EP22765462.1

申请日：2022-08-11

申请人： International Business Machines Corporation

发明人： GAUL, Andrew ,  FROUGIER, Julien ,  XIE, Ruilong ,  GREENE, Andrew ,  WASKIEWICZ, Christopher ,  CHENG, Kangguo

IPC分类号： H01L29/06 ,  H01L29/24 ,  H01L29/778 ,  H01L21/34 ,  H01L29/423 ,  B82Y10/00 ,  B82Y40/00

CPC分类号： H01L29/778 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/42356 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/0665

公开(公告)号：EP4246558B1

公开(公告)日：2024-06-05

申请号：EP22716119.7

申请日：2022-02-14

IPC分类号： H01L21/425 ,  H01L21/34 ,  C30B33/06

CPC分类号： H01L21/425 ,  H01L21/34 ,  H01L21/02002 ,  C30B33/06 ,  C30B29/16 ,  C30B29/60

公开(公告)号：EP4167291A1

公开(公告)日：2023-04-19

申请号：EP21905343.6

申请日：2021-11-02

申请人： BOE Technology Group Co., Ltd. ,  South China University of Technology

发明人： YUAN, Guangcai ,  LAN, Linfeng ,  LIU, Fengjuan ,  NING, Ce ,  HU, Hehe ,  WANG, Fei ,  PENG, Junbiao

IPC分类号： H01L29/24 ,  H01L29/786 ,  H01L21/34 ,  C23C14/34 ,  C23C14/08

摘要： A metal oxide semiconductor material, comprising: a semiconductor matrix material; and at least one rare earth compound doped in the semiconductor matrix material. The general formula of each rare earth compound is represented as (M FD ) a A b . In the general formula (M FD ) a A b , M FD is selected from one of rare earth elements capable of generating an f-d transition, A is selected from an element capable of causing a wavelength band of an absorption spectrum of the corresponding M FD having an f-d transition to be redshifted into a visible light wavelength band range, a is the number of atoms of the element M FD in the general formula (M FD ) a A b , and b is the number of atoms of the element A.

公开(公告)号：EP4053917A1

公开(公告)日：2022-09-07

申请号：EP21830212.3

申请日：2021-05-27

申请人： BOE Technology Group Co., Ltd.

发明人： HUANG, Jie ,  NING, Ce ,  LI, Zhengliang ,  HU, Hehe ,  HE, Jiayu ,  YAO, Nianqi ,  QU, Feng ,  XU, Xiaochun

IPC分类号： H01L29/786 ,  H01L21/34 ,  H01L27/12

摘要： A thin-film transistor and a manufacturing method therefor, and an array substrate and an electronic apparatus. The thin-film transistor comprises a substrate (BS), and an active layer (ACT), which is located on the substrate (BS), wherein the active layer (ACT) comprises multiple layers of oxides (MOL), which are arranged in a stacked manner; the multiple layers of oxides (MOL) comprise a channel layer (CH), a transition layer and a first barrier layer (BR1); the channel layer (CH) is a layer having the maximum carrier mobility in the multiple layers of oxides (MOL); the channel layer (CH) is a crystalline oxide layer or an amorphous oxide layer; the transition layer is in direct contact with the channel layer (CH); the first barrier layer (BR1) is the outermost oxide layer among the multiple layers of oxides (MOL); the first barrier layer (BR1) and the transition layer are both crystalline oxide layers; the degree of crystallization of the first barrier layer (BR1) and the degree of crystallization of the transition layer are both greater than the degree of crystallization of the channel layer (CH); and the band gap of the first barrier layer (BR1) and the band gap of the transition layer are both greater than the band gap of the channel layer. The thin-film transistor has a high mobility and a high stability.

公开(公告)号：EP3295475A1

公开(公告)日：2018-03-21

申请号：EP15858102

申请日：2015-12-10

申请人： BOE TECHNOLOGY GROUP CO LTD

发明人： YAN LIANGCHEN

IPC分类号： H01L21/34 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02664 ,  H01L21/423 ,  H01L21/477 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/786

摘要： The disclosure provides a method of manufacturing a thin film transistor on a base substrate by patterning an active layer comprising a metal oxynitride, and treating the active layer with a plasma comprising oxygen.

公开(公告)号：EP3261127A1

公开(公告)日：2017-12-27

申请号：EP15832673.6

申请日：2015-09-11

申请人： BOE Technology Group Co., Ltd. ,  Hefei Xinsheng Optoelectronics Technology Co. Ltd

发明人： SONG, Botao ,  LIN, Liang ,  ZOU, Zhixiang ,  HUANG, Yinhu

IPC分类号： H01L29/786 ,  H01L29/417 ,  H01L27/02 ,  H01L21/44 ,  H01L21/34

CPC分类号： H01L29/66969 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/383 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/7869

摘要： A thin film transistor and manufacturing method thereof, an array substrate and a display device are disclosed. The thin film transistor includes a source electrode (1), a drain electrode (2) and an active layer (3); the source electrode (1), the drain electrode (2) and the active layer (3) are disposed in a same layer, the source electrode (1) and the drain electrode (2) are separately joined to the active layer (3) through their respective side faces (1b, 2b), a material of the source electrode (1) and the drain electrode (2) is metal, and a material of the active layer (3) is a metal oxide semiconductor in correspondence with material of the source electrode (1) and the drain electrode (2). With the thin film transistor, procedures can be decreased, thereby reducing costs.

摘要翻译： 公开了一种薄膜晶体管及其制造方法，阵列基板和显示装置。 薄膜晶体管包括源电极（1），漏电极（2）和有源层（3）; 源电极（1），漏电极（2）和有源层（3）设置在同一层中，源电极（1）和漏电极（2）分别连接到有源层（3） 通过它们各自的侧面（1b，2b），源电极（1）和漏电极（2）的材料是金属，并且有源层（3）的材料是金属氧化物半导体， 源电极（1）和漏电极（2）。 利用薄膜晶体管，可以减少程序，从而降低成本。

公开(公告)号：EP1285461B1

公开(公告)日：2017-01-25

申请号：EP01940623.0

申请日：2001-05-29

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： ASPAR, Bernard ,  LAGAHE, Chrystelle ,  RAYSSAC, Olivier ,  GHYSELEN, Bruno

IPC分类号： H01L21/762 ,  H01L21/20 ,  H01L21/78 ,  H01L21/34

CPC分类号： H01L21/76254 ,  H01L2221/68368

公开(公告)号：EP0518683B1

公开(公告)日：2002-08-28

申请号：EP92305417.5

申请日：1992-06-12

申请人： CREE, INC.

发明人： Palmour, John W.

IPC分类号： H01L29/24 ,  H01L29/812 ,  H01L21/34

CPC分类号： H01L29/1608 ,  H01L29/812

公开(公告)号：EP0587417B1

公开(公告)日：1997-12-29

申请号：EP93307070

申请日：1993-09-08

申请人： INT SUPERCONDUCTIVITY TECH ,  HOKKAIDO ELECTRIC POWER

发明人： HAMADA KAZUYUKI ,  WAKATA MITSUNOBU ,  MATSUURA KIYOTAKA ,  SUGII NOBUYUKI ,  KUBO KOHICHI ,  YAMAUCHI HISAO

IPC分类号： C01G25/00 ,  C01B35/04 ,  C01G1/00 ,  C01G27/00 ,  C04B35/58 ,  C30B29/10 ,  H01L29/26 ,  H01L39/22 ,  C30B1/02 ,  H01L21/34 ,  H01L39/12

CPC分类号： C04B35/58078 ,  C04B35/5805 ,  H01L29/26

公开(公告)号：EP0635881A2

公开(公告)日：1995-01-25

申请号：EP94109895.6

申请日：1994-06-27

申请人： MOTOROLA, INC.

发明人： Davis, Kenneth L. ,  Weitzel, Charles

IPC分类号： H01L21/34 ,  H01L21/473 ,  H01L29/78

CPC分类号： H01L29/7813 ,  H01L29/1608 ,  H01L29/66068 ,  Y10S438/931

摘要： A silicon carbide LOCOS vertical MOSFET formed on a silicon carbide substrate (55) with portions of epitaxial layers (57, 59, 60) defining the various transistor electrodes (83, 85, 87), rather than defining the electrodes with implants and diffusion. Because of the low diffusion rate in silicon carbide, the LOCOS (75) operation can be performed after the doped epitaxial layers are formed.

摘要翻译： 在碳化硅衬底（55）上形成的碳化硅LOCOS垂直MOSFET具有限定各种晶体管电极（83,85,87）的外延层（57,59,60）的部分，而不是用注入和扩散来限定电极。 由于碳化硅中的扩散速率低，所以可以在掺杂外延层形成之后执行LOCOS（75）操作。