-
41.发明公开
公开(公告)号：EP3879011A1
公开(公告)日：2021-09-15
申请号：EP19882902.0
申请日：2019-11-05
发明人： KANEKO, Tadaaki , ASHIDA, Koji , IHARA, Tomoya , DOJIMA, Daichi
IPC分类号： C30B29/36 , C30B25/20 , H01L21/205
摘要： An object of the present invention is to provide a SiC semiconductor substrate capable of reducing a density of basal plane dislocations (BPD) in a growth layer, a manufacturing method thereof, and a manufacturing device thereof. The method includes: a strained layer removal process S10 that removes a strained layer 11 introduced on a surface of a SiC substrate 10; and an epitaxial growth process S20 that conducts growth under a condition that a terrace width W of the SiC substrate 10 is increased. When a SiC semiconductor substrate 14 is manufactured in such processes, the basal plane dislocations BPD in the growth layer 13 can be reduced, and a yield of a SiC semiconductor device can be improved.
-
公开(公告)号：EP3375914B1
公开(公告)日：2020-06-24
申请号：EP16863829.4
申请日：2016-11-08
发明人： KANEKO, Tadaaki , KUTSUMA, Yasunori , ASHIDA, Koji
-
公开(公告)号：EP3451362A1
公开(公告)日：2019-03-06
申请号：EP17789662.8
申请日：2017-04-27
发明人： KANEKO, Tadaaki , ASHIDA, Koji
摘要： A reference sample (41) has a step/terrace structure made of monocrystalline SiC and a surface of each terrace has first or second stack orientation. In the reference sample (41), contrast as difference in lightness and darkness between an image of a terrace with a surface directly under which the first stack orientation lies and an image of a terrace with a surface directly under which the second stack orientation lies changes according to an incident electron angle which is an angle that an electron beam emitted from a scanning electron microscope forms with a perpendicular to the terrace surface. Even when a SiC substrate has an off angle (e.g., from 1° to 8°), using an inclined support base (20a) capable of correcting the off angle enables sharp contrast that reflects difference between the first and second stack orientations directly under the surface to be obtained irrespective of the off angle.
-
公开(公告)号：EP3375914A1
公开(公告)日：2018-09-19
申请号：EP16863829.4
申请日：2016-11-08
发明人： KANEKO, Tadaaki , KUTSUMA, Yasunori , ASHIDA, Koji
摘要： In a first step, protrusions (42) are formed on a surface of an SiC substrate (40), and the SiC substrate (40) is etched. In a second step, the protrusions (42) of the SiC substrate (40) are epitaxially grown through MSE process, and an epitaxial layer (43a) containing threading screw dislocation, which has been largely grown in the vertical (c-axis) direction as a result of MSE process, is at least partially removed. In a third step, MSE process is performed again on the SiC substrate (40) after the second step, to cause epitaxial layers (43) containing no threading screw dislocation to be grown in the horizontal (a-axis) direction to be connected at the molecular level, so that one monocrystalline 4H-SiC semiconductor wafer (45) having a large area is generated throughout an Si-face or a C-face of the SiC substrate (40).
-
公开(公告)号：EP3223303A1
公开(公告)日：2017-09-27
申请号：EP15861337.2
申请日：2015-11-17
发明人： TORIMI, Satoshi , SHINOHARA, Masato , TERAMOTO, Youji , YABUKI, Norihito , NOGAMI, Satoru , KANEKO, Tadaaki , ASHIDA, Koji , KUTSUMA, Yasunori
IPC分类号： H01L21/302 , C30B29/36 , C30B33/12
CPC分类号： H01L21/30604 , C30B29/36 , C30B33/12 , C30B35/002 , H01L21/302 , H01L21/67063
摘要： Provided is a method for controlling the rate of etching of a SiC substrate based on a composition of a storing container. The etching method of the present invention is for etching the SiC substrate by heating the SiC substrate under Si vapor pressure, in a state where the SiC substrate is stored in a crucible. The crucible is formed of a tantalum metal, and has a tantalum carbide layer provided on an internal space side of the tantalum metal, and a tantalum silicide layer provided on the side further toward the internal space side than the tantalum carbide layer. The rate of etching of the SiC substrate is controlled based on difference in a composition of the tantalum silicide layer.
摘要翻译： 提供了一种基于储存容器的组成来控制SiC衬底的蚀刻速率的方法。 本发明的蚀刻方法用于在将SiC基板收纳在坩埚中的状态下，通过在Si蒸气压下加热SiC基板来对SiC基板进行蚀刻。 坩埚由钽金属形成，并且具有设置在钽金属的内部空间侧上的碳化钽层和设置在比碳化钽层更靠近内部空间侧的侧面上的硅化钽层。 基于钽硅化物层的组成差异来控制SiC衬底的蚀刻速率。
-
公开(公告)号：EP3783637A1
公开(公告)日：2021-02-24
申请号：EP20200972.6
申请日：2017-04-27
发明人： KANEKO, Tadaaki , ASHIDA, Koji
摘要： A reference sample (41) has a step/terrace structure made of monocrystalline SiC and a surface of each terrace has first or second stack orientation. In the reference sample (41), contrast as difference in lightness and darkness between an image of a terrace with a surface directly under which the first stack orientation lies and an image of a terrace with a surface directly under which the second stack orientation lies changes according to an incident electron angle which is an angle that an electron beam emitted from a scanning electron microscope forms with a perpendicular to the terrace surface. Even when a SiC substrate has an off angle (e.g., from 1° to 8°), using an inclined support base (20a) capable of correcting the off angle enables sharp contrast that reflects difference between the first and second stack orientations directly under the surface to be obtained irrespective of the off angle.
-
47.发明公开
公开(公告)号：EP3450394A1
公开(公告)日：2019-03-06
申请号：EP17789664.4
申请日：2017-04-27
IPC分类号： C01B32/188 , C30B29/36 , C30B33/02 , H01L21/3065
摘要： A method includes a graphene precursor formation process of: heating a SiC substrate to sublimate Si atoms in a Si surface of the SiC substrate so that a graphene precursor is formed; and stopping the heating before the graphene precursor is covered with graphene. A SiC substrate to be treated in the graphene precursor formation process is provided with a step including a plurality of molecular layers. The step has a stepped structure in which a molecular layer whose C atom has two dangling bonds is disposed closer to the surface than a molecular layer whose C atom has one dangling bond.
-
48.发明公开NANOMETER STANDARD PROTOTYPE AND METHOD FOR MANUFACTURING NANOMETER STANDARD PROTOTYPE 审中-公开NM标准原型及其制造方法的标准NM原型
公开(公告)号：EP2778649A1
公开(公告)日：2014-09-17
申请号：EP11875382.1
申请日：2011-11-11
发明人： KANEKO, Tadaaki , USHIO, Shoji
CPC分类号： G01Q40/02 , C30B23/02 , C30B25/02 , C30B29/36 , C30B33/12 , H01L21/02378 , H01L21/02529 , H01L29/1608
摘要： A standard sample (72) that is a nanometer standard prototype has a standard length that serves as a length reference. The standard sample (72) includes a SiC layer in which a step-terrace structure is formed. The height of a step is equal to the height of a full unit that corresponds to one periodic of a stack of SiC molecules in a stack direction or equal to the height of a half unit that corresponds to one-half periodic of the stack of SiC molecules in the stack direction. The height of the step is used as the standard length. In a microscope such as an STM that is to be measured in a high-temperature vacuum environment, performing heating in a vacuum furnace provided in the STM enables a surface reconstruction to occur while removing a natural oxide film from the surface. The surface reconstruction has an ordered atomic arrangement. Therefore, the accuracy of the height of the step is not degraded. Accordingly, a standard sample usable under a high-temperature vacuum is achieved.
-
49.发明公开
公开(公告)号：EP3450595A1
公开(公告)日：2019-03-06
申请号：EP17789663.6
申请日：2017-04-27
IPC分类号： C30B29/36
摘要： In a state in which a SiC container (3) of a material including polycrystalline SiC is housed in a TaC container (2) of a material including TaC and in which an underlying substrate (40) is housed in the SiC container (3), the TaC container (2) is heated in an environment where a temperature gradient occurs in such a manner that inside of the TaC container (2) is at a Si vapor pressure. Consequently, C atoms sublimated by etching of the inner surface of the SiC container (3) are bonded to Si atoms in an atmosphere so that an epitaxial layer (41) of single crystalline 3C-SiC thereby grows on the underlying substrate (40).
-
公开(公告)号：EP3222759A1
公开(公告)日：2017-09-27
申请号：EP15861692.0
申请日：2015-11-17
发明人： KANEKO, Tadaaki , ASHIDA, Koji , KUTSUMA, Yasunori , TORIMI, Satoshi , SHINOHARA, Masato , TERAMOTO, Youji , YABUKI, Norihito , NOGAMI, Satoru
IPC分类号： C30B33/12 , C30B29/36 , H01L21/302
CPC分类号： H01L21/30621 , C30B29/36 , C30B33/12 , H01L21/0445 , H01L21/302 , H01L21/304
摘要： Provided is a surface treatment method for a SiC substrate (40), the method being capable of controlling whether to generate a step bunching or the type of step bunching that is generated. In the surface treatment method in which the surface of the SiC substrate (40) is etched by heating the SiC substrate (40) under Si vapor pressure, an etching mode and an etching depth which are determined at least on the basis of an etching rate, are controlled to etch the SiC substrate (40), so that a surface pattern of the SiC substrate (40) after etching treatment is controlled.
摘要翻译： 提供了一种用于SiC衬底（40）的表面处理方法，该方法能够控制是产生台阶聚集还是产生的台阶聚集的类型。 在通过在Si蒸气压下加热SiC衬底（40）来对SiC衬底（40）的表面进行蚀刻的表面处理方法，蚀刻模式和蚀刻深度至少基于蚀刻速率 被控制以蚀刻SiC衬底（40），从而控制蚀刻处理后的SiC衬底（40）的表面图案。
-
-
-
-
-
-
-
-
-
搜索结果
52 条记录 (耗时 0.016 秒)
