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41.发明公开Tunneling effect element and physical quantity to electrical quantity transducer 有权隧道效应器件和物理量的换能器为电气可变
公开(公告)号：EP1708291A3
公开(公告)日：2009-04-08
申请号：EP06075740.8
申请日：2006-03-29
申请人： TDK Corporation
CPC分类号： G01L1/005 , G01P15/0894 , G01P15/18 , H01L45/00
摘要： This invention provides a tunneling effect element that has versatility and that does not receive the effects of drift due to differences in the thermal-expansion coefficient of the lower and upper electrodes, and is not easily affected by external magnetic fields.
The disclosed tunneling effect element 1 comprises: an insulating layer 11 that forms a tunneling barrier, a lower electrode 12 that is conductive and is formed on the bottom surface of the insulating layer 11, an upper electrode 13 that is conductive and is formed on the top surface of the insulating layer 11, and a transmission member 5 that is formed around the insulating layer 11, lower electrode 12 and upper electrode 13, and transmits the behavior of the object to be detected to the insulating layer 11.-
42.发明公开Tunneling effect element and physical quantity to electrical quantity transducer 有权Tunneleffekt-Bauelement und Wandler einer physikalischenGrössein eine elektrischeGrösse
公开(公告)号：EP1708291A2
公开(公告)日：2006-10-04
申请号：EP06075740.8
申请日：2006-03-29
申请人： TDK Corporation
CPC分类号： G01L1/005 , G01P15/0894 , G01P15/18 , H01L45/00
摘要： This invention provides a tunneling effect element that has versatility and that does not receive the effects of drift due to differences in the thermal-expansion coefficient of the lower and upper electrodes, and is not easily affected by external magnetic fields.
The disclosed tunneling effect element 1 comprises: an insulating layer 11 that forms a tunneling barrier, a lower electrode 12 that is conductive and is formed on the bottom surface of the insulating layer 11, an upper electrode 13 that is conductive and is formed on the top surface of the insulating layer 11, and a transmission member 5 that is formed around the insulating layer 11, lower electrode 12 and upper electrode 13, and transmits the behavior of the object to be detected to the insulating layer 11.摘要翻译： 本发明提供了具有通用性的隧道效应元件，并且由于上下电极的热膨胀系数的差异而不会受到漂移的影响，并且不容易受到外部磁场的影响。 所公开的隧道效应元件1包括：形成隧道势垒的绝缘层11，导电并形成在绝缘层11的底表面上的下电极12，导电并形成在绝缘层11上的上电极13 绝缘层11的上表面和形成在绝缘层11，下电极12和上电极13周围的传输构件5，并将被检测物体的行为传递到绝缘层11。
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43.发明授权
公开(公告)号：EP0763861B1
公开(公告)日：2004-08-18
申请号：EP96907760.1
申请日：1996-04-01
CPC分类号： H01L45/00 , G02F1/1365
摘要： A production method of nonlinear MIM device (50) including a Ta electrode layer (16), an anodized layer (18) and a Cr electrode layer (20). A tantalum oxide film (14) is first disposed on a transparent substrate (12), the Ta electrode layer (16) is then disposed on the former, and the anodized layer (18) is disposed on the Ta electrode layer (16). Thereafter, a heat treatment is carried out, including a final cooling step in an atmosphere containing steam. Thereafter, the Cr electrode layer (20) is disposed to finish a nonlinear MIM device (50). Owing to the heat treatment in the steam-containing atmosphere, the nonlinear characteristics of the MIM device can be improved, and its off-time resistance can be also improved.
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公开(公告)号：EP1393377A2
公开(公告)日：2004-03-03
申请号：EP02726876.2
申请日：2002-05-16
IPC分类号： H01L29/205 , H01L29/72
CPC分类号： H01L27/1446 , B82Y10/00 , B82Y15/00 , B82Y20/00 , H01L29/7311 , H01L29/7606 , H01L29/82 , H01L31/08 , H01L31/101 , H01L33/0004 , H01L33/0037 , H01L39/22 , H01L45/00
摘要： A detector (10A) for detecting electromagnetic radiation incident thereon over a desired range of frequencies exhibits a given responsivity and includes an output and first and second non-insulating layers (14), which layers are spaced apart such that a given voltage can be applied thereacross. The first non-insulating layer (12) is formed of a metal, and the first and second non-insulating layers are configured to form an antenna structure for receiving electromagnetic radiation over the desired range of frequencies. The detector further includes an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between the first and second non-insulating layers as a result of the electromagnetic radiation being received at the antenna structure. The arrangement includes at least a first layer of an amorphous material (16) such that the transport of electrons includes, at least in part, transport by means of resonant tunneling, and such that at least a portion of the electromagnetic radiation incident on the antenna is converted at the output to an electrical signal having an intensity which depends on the given responsivity.
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45.发明公开THIN-FILM TWO-TERMINAL ELEMENTS, METHOD OF PRODUCTION THEREOF, AND LIQUID CRYSTAL DISPLAY 失效DÜNNSCHICHTZWEIPOLELEMENT，HERSTELLUNGSVERFAHREN UNDFLÜSSIGKRISTAL-ANZEIGEVORRICHTUNG
公开(公告)号：EP1018772A1
公开(公告)日：2000-07-12
申请号：EP98935302.4
申请日：1998-07-30
发明人： AOMORI, Shigeru , NAKATANI, Yoshiki
IPC分类号： H01L49/02
CPC分类号： H01L45/00 , G02F1/1365
摘要： A thin-film two-terminal element including a first metal film functioning as a wiring layer and a first electrode, a first insulating film formed on the first electrode of the first metal film and having a non-linear resistance property, a second metal film formed on the first insulating film and functioning as a second electrode, and a third metal film formed in a wiring layer portion of the first metal film and having a smaller stress and a smaller electrical resistance than the first metal film, and a thin-film two-terminal element including, on a resinous substrate as an insulative substrate, a first metal film functioning as a wiring layer and a first electrode, a first insulating film formed on the first electrode of the first metal film and having a non-linear resistance property, a second metal film formed on the first insulating film and functioning as a second electrode, and a second insulating film formed under the second metal film expect a portion thereof which electrically functions with the first electrode via the first insulating film.
摘要翻译： 一种薄膜二端元件，包括用作布线层的第一金属膜和第一电极，形成在第一金属膜的第一电极上并具有非线性电阻特性的第一绝缘膜，第二金属膜 形成在第一绝缘膜上并用作第二电极，以及形成在第一金属膜的布线层部分中并且具有比第一金属膜更小的应力和更小的电阻的第三金属膜，以及薄膜 在作为绝缘基板的树脂基板上具有作为布线层的第一金属膜和第一电极的第二绝缘膜，在第一金属膜的第一电极上形成有非线性电阻的第一绝缘膜 性质，形成在第一绝缘膜上并用作第二电极的第二金属膜，以及形成在第二金属膜下方的第二绝缘膜，期望其中的一部分 y通过第一绝缘膜与第一电极起作用。
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公开(公告)号：EP0870215A1
公开(公告)日：1998-10-14
申请号：EP97939123.0
申请日：1997-09-19
发明人： OVERSLUIZEN, Gerrit , GEUNS, Thomas, Cleophas, Theodorus , McGARVEY, Brian, Patrick , DEANE, Steven, Charles
CPC分类号： G02F1/1365 , G02F1/1368 , H01L45/00 , Y10S438/957
摘要： Thin-film switching elements (20, 21) of a display device or the like include a first electrode (22, 23) on a substrate (11) and a layer of switching material (24, 25) on the first electrode. These switching elements may be semiconductor pin or Schottky diodes, or MIMs, or TFTs. The switching material is typically α-Si:H in the case of the semiconductor diodes and TFTs, and tantalum oxide or silicon nitride in the case of the MIMs. An auxiliary layer (28, 29) of insulating material is provided between the first electrode (22, 23) and the layer of switching material (24, 25), leaving an edge (30, 31) of the first electrode uncovered, so that the layer of switching material is connected to this edge only. The switching elements with this construction can be patterned using an inexpensive proximity printer, and have a low capacitance value, so counter-acting kickback and crosstalk which can occur in a switching matrix, e.g. in the display of television pictures.
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47.发明授权Element substrate for liquid crystal display devices and its production method 失效用于液晶显示装置和方法用于制备元件基板上
公开(公告)号：EP0496223B1
公开(公告)日：1996-04-03
申请号：EP92100348.9
申请日：1992-01-10
IPC分类号： G02F1/136
CPC分类号： G02F1/1365 , H01L45/00
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48.发明授权Method for producing an element substrate for a liquid crystal display device 失效一种用于制造用于液晶显示装置的基板的制造方法。
公开(公告)号：EP0464810B1
公开(公告)日：1995-05-10
申请号：EP91111072.4
申请日：1991-07-04
发明人： Takahashi, Kotoyoshi, c/o Seiko Epson Corporation , Ushiki, Takeyoshi, c/o Seiko Epson Corporation
CPC分类号： G02F1/1365 , H01L45/00 , Y10S438/957 , Y10T29/41 , Y10T29/413
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49.发明公开A method for producing metal wirings on an insulating substrate 失效Verfahren zum Herstellen von Metalleiter auf einem isolierenden Substrat。
公开(公告)号：EP0570205A1
公开(公告)日：1993-11-18
申请号：EP93303669.1
申请日：1993-05-12
IPC分类号： H01L21/321 , H01L21/28 , H01L29/62 , H01L45/00
CPC分类号： H01L29/66765 , G02F2001/136295 , H01L21/28008 , H01L21/31683 , H01L29/4908 , H01L45/00
摘要： A method for producing metal wirings on an insulating substrate is disclosed. The method comprises the steps of forming a metal wiring layer of a predetermined shape on a predetermined position of the insulating substrate, the metal wiring layer being made of a metal capable of being oxidized; implanting the metal wiring layer with an impurity element; and forming an insulating layer by oxidizing the surface of the metal wiring layer after implanting the impurity element.
摘要翻译： 公开了一种在绝缘基板上制造金属布线的方法。 该方法包括以下步骤：在绝缘基板的预定位置上形成预定形状的金属布线层，金属布线层由能被氧化的金属制成; 用杂质元素注入金属布线层; 以及在注入杂质元素之后通过氧化金属布线层的表面来形成绝缘层。
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