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51.发明公开
公开(公告)号：EP1292975A1
公开(公告)日：2003-03-19
申请号：EP01945456.0
申请日：2001-06-15
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： The invention concerns a method for making substrates, in particular for optics, electronics, or optoelectronics, comprising an operation which consists in bonding a useful element (10, 16) of a first material on the surface of a support (2), comprising a second material. The invention is characterised in that: it further comprises an operation which consists in depositing an amorphous material (3), on the surface of the support (2), formed with the second material and designed to receive the element consisting of the first material or on the surface of the useful element formed with the first material and designed to be bonded on the support (2); and the second material is less noble than the first material. The invention also concerns a method for making substrates, in particular for optics, electronics or optoelectronics, comprising an operation which consists in bonding a useful element (10) of a first material on a surface of a support (2), comprising a second material. The method is characterised in that the useful element (10) or the support (2) comprises a polycrystalline material at least on its surface designed to be bonded, and it further comprises, prior to the bonding operation, an operation which consists in forming a layer of amorphous material (2), on the surface or surfaces comprising the polycrystalline material.
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公开(公告)号：EP1268884A1
公开(公告)日：2003-01-02
申请号：EP01919609.6
申请日：2001-04-02
发明人： IWASAKI, Atsushi , GHYSELEN, Bruno
IPC分类号： C30B31/22 , C30B33/00 , H01L21/762
CPC分类号： C30B29/06 , C30B31/22 , C30B33/00 , H01L21/76254
摘要： The invention concerns a method for making substrates, in particular for optics, electronics or optoelectronics, characterised in that it comprises an operation which consists in implanting (100) atomic species beneath the surface of a material in the form of a cylindrical ingot (1), at a depth of implantation distributed about a certain value by bombardment of said atomic species on a zone of the ingot (1) cylindrical surface, and an operation which consists in removing (300), at a separation depth located proximate to the depth of implantation, the layer (2) of material located between the surface and the separation depth, to remove said layer (2) from the rest of the ingot (1)
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53.发明公开METHOD FOR RECYCLED SEPARATED WAFER AND RECYCLED SEPARATED WAFER 有权VERFAHREN ZURRÜCKGEWINNUNGEINES ABGETRENNTEN WAFER
公开(公告)号：EP1156531A1
公开(公告)日：2001-11-21
申请号：EP00977956.2
申请日：2000-11-27
发明人： Kuwabara, Susumu Isobe R & D Center , Mitani, Kiyoshi Isobe R & D Center , Tate, Naoto Isobe R & D Center , Nakano, Masatake Isobe R & D Center , Barge, Thierry S.O.I.TEC Silicon on Insulator Tech , Maleville, Christophe SOITEC Silicon on Ins. Tech
IPC分类号： H01L27/12
CPC分类号： H01L21/02032 , H01L21/76254 , H01L22/34 , Y10S438/906 , Y10S438/974 , Y10S438/977
摘要： In a method for reclaiming a delaminated wafer produced as a by-product in the production of bonded wafer by the ion implantation and delamination method, at least ion-implanted layer on a chamfered portion of the delaminated wafer is removed, and then a surface of the wafer is polished. Specifically, at least a chamfered portion of the delaminated wafer is subjected to an etching treatment and/or processing by chamfering, and then a surface of the wafer is polished. Alternatively, the delaminated wafer is subjected to a heat treatment, and then polished. There are provided a method for reclaiming a delaminated wafer, which provides a reclaimed wafer of high quality that does not generate particles even when it is subjected to a heat treatment with good yield, and such a reclaimed wafer.
摘要翻译： 在通过离子注入和分层方法回收在接合晶片的生产中作为副产物生产的分层晶片的方法中，至少去除分层晶片的倒角部分上的离子注入层，然后将表面 晶圆被抛光。 具体而言，通过倒角对剥离后的晶片的至少倒角部进行蚀刻处理和/或处理，然后对晶片的表面进行研磨。 或者，对分层晶片进行热处理，然后进行抛光。 提供了一种用于回收分层晶片的方法，其提供了高质量的再生晶片，即使当其以良好的成品进行热处理时也不产生颗粒，以及这种再生晶片。
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公开(公告)号：EP2293326A3
公开(公告)日：2012-01-25
申请号：EP10013020.2
申请日：2004-06-10
发明人： Maurice, Thibaut , Nguyen, Phuong , Guiot, Eric
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： The invention relates to a method for manufacturing a material compound wafer, in particular a semiconductor on quartz type material compound wafer, comprising the steps of a) forming a predetermined splitting area in a source substrate, b) attaching the source substrate to a handle substrate to form a source-handle-compound and c) thermal annealing of the source-handle-compound for weakening of the predetermined splitting area and d) detachment of the source substrate at the predetermined splitting area by mechanical splitting. It has been observed that with the described process the final product quality was not constant so that production yield was relatively low and it is therefore the object of the present invention to further improve the process for manufacturing material compound wafers. This is achieved in that the source-handle-compound is brought to at a detachment temperature in step d) higher than room temperature at which a predetermined splitting area stays with essentially the same degree of weakening, and the mechanical splitting is performed at said temperature.
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55.发明公开PROCESS TO DISSOLVE THE OXIDE LAYER IN THE PERIPHERAL RING OF A STRUCTURE OF SEMICONDUCTOR-ON-INSULATOR TYPE 审中-公开PROCESS FOR解决氧化层外围环SEMICONDUCTOR绝缘体上型结构
公开(公告)号：EP2382657A1
公开(公告)日：2011-11-02
申请号：EP09799117.8
申请日：2009-12-30
IPC分类号： H01L21/762 , H01L21/3105 , H01L21/324
CPC分类号： H01L21/3247 , H01L21/02238 , H01L21/02255 , H01L21/02422 , H01L21/02532 , H01L21/31662 , H01L21/7624
摘要： The invention concerns a process to treat a structure of semiconductor-on-insulator type, successively comprising a carrier substrate, an oxide layer (2) and a thin layer of a semiconductor material (3), said structure having a peripheral ring in which the oxide layer (2) is exposed, said process comprising application of a main thermal treatment in a neutral or controlled reducing atmosphere. It comprises a step to cover at least an exposed peripheral part of the oxide layer (2), prior to said main thermal treatment, this latter treatment being conducted under controlled time and temperature conditions so as to urge at least part of the oxygen in the oxide layer (2) to diffuse through the thin semiconductor layer (3), leading to controlled reduction of the thickness of the oxide layer (2).
摘要翻译： 本发明涉及一种工艺处理的载体基底的半导体绝缘体上型结构的结构，氧化物层和半导体材料的薄层上，worin具有其中氧化物层露出的外周环的结构，并且 该过程包括一个主热处理在中性或受控的还原气氛中的应用。 该方法包括一个步骤，以至少覆盖在所述氧化物层的裸露的周向部分，前向主热处理后一种处理被控制的时间和温度条件下进行，以便在氧化层以促使氧的至少一部分 通过薄半导体层扩散，从而导致在氧化物层的厚度的受控降低。
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公开(公告)号：EP1461190B1
公开(公告)日：2011-10-26
申请号：EP02799856.6
申请日：2002-12-31
IPC分类号： B28D5/00
CPC分类号： B28D5/0011 , B28D5/0023 , B28D5/0052 , B28D5/0064 , H01L21/2007 , H01L21/76254 , Y10T83/364 , Y10T156/1126 , Y10T156/1184 , Y10T156/1928 , Y10T156/1967 , Y10T156/1972
摘要： The invention concerns a method for cutting two material layers (10a, 10b) forming an assembly to be cut (10), which consists in: producing between the two layers a weakened interface (11), defining an interface ring; forming a first region (21) called high-pressure region; forming at least a second region (22a, 22b) called low-pressure region; supplying the high pressure region with a fluid with controlled pressure. The invention is characterized in that the weakened interface can be produced by any type of process known per se and designed therefor, thus not limited to producing a bonding interface; and combined with the high pressure supply the interface ring of the assembly to be cut is etched with at least a blade (30). The invention also concerns a related device.
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57.发明公开
公开(公告)号：EP2375455A1
公开(公告)日：2011-10-12
申请号：EP10290190.7
申请日：2010-04-09
IPC分类号： H01L31/052 , H01L31/075
CPC分类号： H01L31/052 , H01L31/076 , Y02E10/548
摘要： The present invention relates to a (voltage matched multijunction) solar cell with a first solar cell stack and a second solar cell stack and wherein the first solar cell stack and the second solar cell stack are electrically connected parallel to each other.
摘要翻译： 本发明涉及具有第一太阳能电池堆和第二太阳能电池堆的（电压匹配多结）太阳能电池，其中第一太阳能电池堆和第二太阳能电池堆彼此并联电连接。
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公开(公告)号：EP2375442A1
公开(公告)日：2011-10-12
申请号：EP10290181.6
申请日：2010-04-06
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/187 , H01L21/2007 , H01L21/76251
摘要： The invention relates to a method for manufacturing a semiconductor substrate, in particular a semiconductor-on-insulator substrate, comprising the steps of a) providing a donor substrate and a handle substrate, b) forming a pattern of one or more doped regions in, in particular inside, the handle substrate, and then c) attaching, in particular by bonding, the donor and the handle substrate to obtain a donor-handle compound.
摘要翻译： 本发明涉及一种用于制造半导体衬底，尤其是绝缘体上半导体衬底的方法，包括以下步骤：a）提供施主衬底和处理衬底，b）形成一个或多个掺杂区域的图案， 特别是在处理衬底内部，然后c）特别地通过结合施主和处理衬底来获得施主 - 处理化合物。
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59.发明公开
公开(公告)号：EP2345060A1
公开(公告)日：2011-07-20
申请号：EP09793351.9
申请日：2009-10-08
发明人： ARENA, Chantal
IPC分类号： H01L21/02
CPC分类号： H01L21/0254 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02647 , H01L21/76254 , H01L29/0684 , H01L29/2003
摘要： Methods of fabricating semiconductor devices or structures include forming structures of a semiconductor material overlying a layer of a compliant material, subsequently changing the viscosity of the compliant material to relax the semiconductor material structures, and utilizing the relaxed semiconductor material structures as a seed layer in forming a continuous layer of relaxed semiconductor material. In some embodiments, the layer of semiconductor material may comprise a III-V type semiconductor material, such as, for example, indium gallium nitride. Novel intermediate structures are formed during such methods. Engineered substrates include a continuous layer of semiconductor material having a relaxed lattice structure.
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公开(公告)号：EP1440467B1
公开(公告)日：2011-06-22
申请号：EP02783214.6
申请日：2002-09-26
IPC分类号： H01L21/66 , H01L21/265 , G01R31/28
CPC分类号： H01L22/20 , H01J2237/31703 , H01L21/26506 , H01L21/324
摘要： The invention relates to a method of characterising, ex-situ, the implantation dose of at least one species in a substrate. The inventive method is characterised in that it comprises: an annealing step that is intended to cause the blistering of the species in the implanted substrate; a substrate surface image acquisition step; and an image processing step. The implantation dose characteristics are deduced from the image processing step.
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