公开(公告)号：EP3016219B1

公开(公告)日：2018-12-26

申请号：EP15191797.8

申请日：2015-10-28

Applicant: Nichia Corporation

Inventor： HIRAO, Tsuyoshi

IPC: H01S5/042 ,  H01S5/16 ,  H01S5/32 ,  H01S5/343 ,  H01S5/40 ,  H01S5/22 ,  H01S5/022 ,  H01S5/028 ,  H01S5/20

CPC classification number: H01S5/0421 ,  H01S5/0224 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/168 ,  H01S5/2036 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/34333 ,  H01S5/4018 ,  H01S2301/176

Abstract: A semiconductor laser element includes: a semiconductor stack with a ridge, the semiconductor stack having an emission surface and a reflection surface; a first electrode layer extending in the lengthwise direction and disposed on the ridge in contact with the semiconductor stack; a current injection prevention layer covering at least a part of an upper surface from side surfaces of the first electrode layer, and being in contact with the first electrode layer at 18 to 80% of a contact surface area between the first electrode layer and the semiconductor stack; and a second electrode layer disposed on the current injection prevention layer, and being in contact with a part of the first electrode layer, edges of the second electrode layer being disposed closer to the emission surface and the reflection surface than edges of the first electrode layer, respectively..

公开(公告)号：EP1672757B1

公开(公告)日：2017-11-08

申请号：EP05112050.9

申请日：2005-12-13

Applicant: Palo Alto Research Center Incorporated

Inventor： Kneissl, Michael A.

IPC: H01S5/343 ,  H01S5/32

CPC classification number: B82Y20/00 ,  H01S5/0421 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/3219 ,  H01S5/34333 ,  H01S2301/18 ,  H01S2304/04

公开(公告)号：EP3154140A4

公开(公告)日：2017-06-07

申请号：EP15803180

申请日：2015-05-07

Applicant: SHARP KK ,  UNIV TOKYO

Inventor： KOTANI TERUHISA ,  ARAKAWA YASUHIKO

IPC: H01S5/343 ,  H01S5/022 ,  H01S5/042 ,  H01S5/20 ,  H01S5/22 ,  H01S5/32 ,  H01S5/34

CPC classification number: H01S5/3401 ,  H01S5/0224 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/2031 ,  H01S5/2077 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/3402 ,  H01S5/3407 ,  H01S5/34333

Abstract: A QCL (10) includes a first electrode (15), a first contact layer (11) that is in contact with the first electrode (15) and is made of a first compound semiconductor, a second electrode (14) having a polarity opposite to that of the first electrode (15), a second contact layer (13) that is in contact with the second electrode (14) and is made of a second compound semiconductor, and an active layer (12) disposed between the first contact layer (11) and the second contact layer (13) and including two or more active layer units. Each of the active layer units includes one or more quantum well layers made of a third compound semiconductor and one or more barrier layers made of a fourth compound semiconductor, and each of the quantum well layers and each of the barrier layers are alternately stacked. The vibrational energies of longitudinal optical phonons of the third compound semiconductor and the fourth compound semiconductor are higher than the vibrational energy of a longitudinal optical phonon of GaAs and lower than or equal to the vibrational energy of a longitudinal optical phonon of AlN.

Abstract translation: QCL（10）包括第一电极（15），与第一电极（15）接触且由第一化合物半导体构成的第一接触层（11），具有极性相反的第二电极（14） 与所述第一电极（15）的第一接触层（12）之间的第二接触层（13），所述第二接触层（13）与所述第二电极（14）接触并且由第二化合物半导体制成;以及有源层（12） （11）和第二接触层（13）并且包括两个或更多个有源层单元。 每个有源层单元包括由第三化合物半导体构成的一个或多个量子阱层和由第四化合物半导体构成的一个或多个阻挡层，并且每个量子阱层和每个阻挡层交替堆叠。 第三化合物半导体和第四化合物半导体的纵向光学声子的振动能量高于GaAs的纵向光学声子的振动能量并且小于或等于AlN的纵向光学声子的振动能量。

公开(公告)号：EP2988378B1

公开(公告)日：2017-04-26

申请号：EP15181819.2

申请日：2015-08-20

Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives ,  STmicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

Inventor： FERROTTI, Thomas ,  BEN BAKIR, Badhise ,  CHANTRE, Alain ,  CREMER, Sébastien ,  DUPREZ, Hélène

IPC: H01S5/026 ,  H01S5/10 ,  H01S5/12 ,  H01S5/02 ,  H01S5/022 ,  H01S5/042 ,  H01S5/187 ,  H01S5/323 ,  G02B6/12 ,  G02B6/30 ,  G02B6/34

CPC classification number: H01S5/1237 ,  G02B6/30 ,  G02B6/34 ,  G02B2006/12061 ,  G02B2006/12121 ,  H01L2224/32 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/02284 ,  H01S5/026 ,  H01S5/0421 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/1231 ,  H01S5/187 ,  H01S5/323 ,  H01S5/343 ,  H01S2301/166

公开(公告)号：EP2988378A1

公开(公告)日：2016-02-24

申请号：EP15181819.2

申请日：2015-08-20

Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives ,  STmicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

Inventor： FERROTTI, Thomas ,  BEN BAKIR, Badhise ,  CHANTRE, Alain ,  CREMER, Sébastien ,  DUPREZ, Hélène

IPC: H01S5/026 ,  H01S5/10 ,  H01S5/12 ,  H01S5/02 ,  H01S5/022 ,  H01S5/042 ,  H01S5/187 ,  H01S5/323 ,  G02B6/12

CPC classification number: H01S5/1237 ,  G02B6/30 ,  G02B6/34 ,  G02B2006/12061 ,  G02B2006/12121 ,  H01L2224/32 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/02284 ,  H01S5/026 ,  H01S5/0421 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/1231 ,  H01S5/187 ,  H01S5/323 ,  H01S5/343 ,  H01S2301/166

Abstract: L'invention concerne un dispositif laser (1) disposé dans et/ou sur silicium et à hétéro structure III-V comprenant
o un milieu amplificateur (3) à hétérostructure III-V, et
o un guide d'onde optique en arête (11), disposé en regard du milieu amplificateur (3) et comprenant un guide d'onde en ruban (15) doté d'une arête longitudinale (17), le guide d'onde optique en arête (11) étant disposé dans du silicium.
Le guide d'onde optique en arête (11) est orienté de manière à ce qu'au moins un réseau de Bragg (19, 19a, 19b) est disposée sur la face (21) du guide d'onde en ruban (15) qui est proximale par rapport au milieu amplificateur (3) et en ce que l'arête (17) est disposée sur la face (23) du guide d'onde en ruban (15) qui est distale par rapport au milieu amplificateur (3).

Abstract translation: 本发明涉及一种布置在硅中和/或硅上的III-V异质结构激光器件，包括：III-V异质结构增益介质; 以及面向所述增益介质（3）并且包括配备有纵向肋（17）的平板波导（15）的光学肋波导（11），所述光学波纹管（11）布置在所述硅中。 光学肋波导（11）被定向为使得至少一个布拉格光栅（19,19a，19b）布置在相对于增益介质（3）近端的平板波导（15）的该侧（21）上， 因为肋（17）被放置在相对于增益介质（3）远端的平板波导（15）的该侧（23）上。

公开(公告)号：EP1830416B1

公开(公告)日：2011-06-08

申请号：EP06124077.6

申请日：2003-12-18

Applicant: Cree, Inc.

Inventor： Haberern, Kevin W ,  Rosado, Raymond ,  Bergmann, Michael J ,  Emerson, David T

IPC: H01S5/028 ,  H01S5/323

CPC classification number: H01L33/145 ,  H01S5/021 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/2275 ,  H01S5/32341 ,  H01S2301/176

公开(公告)号：EP1710877B1

公开(公告)日：2010-12-01

申请号：EP04807417.3

申请日：2004-12-21

Applicant: Panasonic Corporation

Inventor： MIZUUCHI, Kiminori, ,  KASAZUMI, Ken'ichi, ,  MORIKAWA, Akihiro,

IPC: H01S5/183 ,  H01S5/14 ,  H01S5/042 ,  G02F1/37 ,  H01S5/42

CPC classification number: H01S5/18386 ,  H01S3/109 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/0655 ,  H01S5/14 ,  H01S5/18391 ,  H01S5/2086 ,  H01S5/4062 ,  H01S5/423 ,  H01S2301/166

Abstract: A surface-emitting laser (100a) comprises an active layer (3) formed on a semiconductor substrate (2a) and a pair of upper and lower electrodes (5, 6) for injecting carriers into the active layer (3). The lower electrode (6) is shaped into a star when viewed from above so that the density of the current injected into the active layer (3) from the lower electrode (6) is high at the center of the lower electrode (6) and low at its periphery part. The density distribution of the carriers injected into the active layer of the surface-emitting laser (100a) corresponds to the power distribution of the light inside the active layer. As a result, hole burning due to an increase of the current density in the region corresponding to the peripheral part of the electrode does not occur in the active layer, and the transverse mode stability during high output operation is drastically enhanced, thereby improving the high-output characteristic.

公开(公告)号：EP1387453B1

公开(公告)日：2009-11-11

申请号：EP02714522.6

申请日：2002-04-08

Applicant: Nichia Corporation

Inventor： KAWAGOE, Kimihiro c/o NICHIA CORPORATION

IPC: H01S5/323 ,  H01S5/22 ,  H01L33/00

CPC classification number: H01L33/32 ,  H01L33/02 ,  H01S5/0421 ,  H01S5/32341

公开(公告)号：EP1766697A2

公开(公告)日：2007-03-28

申请号：EP05763653.2

申请日：2005-03-30

Applicant: CREE, INC.

Inventor： HABERERN, Kevin ,  BERGMANN, Michael, John ,  MIECZKOWSKI, Van ,  EMERSON, David, Todd

IPC: H01L33/00

CPC classification number: H01L33/145 ,  H01S5/0421 ,  H01S5/2063 ,  H01S5/2068 ,  H01S5/32341

Abstract: Light emitting devices and methods of fabricating light emitting devices having a current blocking mechanism below the wire bond pad (22) are provided. The current blocking mechanism may be a reduced conduction region (30) in an active region (14) of the device. The current blocking mechanism could be a damage region of a layer on which a contact (18) is formed. The current blocking mechanism could be a Schottky contact between an ohmic contact (18) and the active region (14) of the device. A semiconductor junction, such as a PN junction could also be provided between the ohmic contact (18) and the active region (14).

公开(公告)号：EP1394912A4

公开(公告)日：2007-02-21

申请号：EP02730913

申请日：2002-06-04

Applicant: SONY CORP

Inventor： TOMIYA SHIGETAKA ,  HINO TOMONORI

IPC: H01S5/042 ,  H01S5/10 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343

CPC classification number: B82Y20/00 ,  H01S5/0421 ,  H01S5/1082 ,  H01S5/3072 ,  H01S5/3201 ,  H01S5/321 ,  H01S5/3213 ,  H01S5/3409 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/12 ,  Y10S438/962

Abstract: Nitride compound semiconductor laser which has a flat cleavage end face and can restrict destruction at a laser end face to be caused during the operation to thereby prolong the service life, and which comprises a stress concentration restricting layer provided between an active layer and a cap layer.