摘要:
A memory is disclosed. The memory includes a memory array having a plurality of memory cells. The memory also includes an address decoder configured to assert a wordline to enable the memory cells. Additionally, the memory includes a tracking circuit configured to vary a duration of asserting the wordline as a function of which one of the memory cells is accessed. A method is also disclosed. The method includes asserting a wordline to enable the memory cells and varying a duration of asserting the wordline as a function of which one of a plurality of memory cells is accessed.
摘要:
There is provided a multiple data rate memory comprising a clock splitting circuit and a multiplexing address latch. The clock splitting circuit is configured to generate first and second internal clock pulses from a rising edge of an external clock signal and to provide the first and second internal clock signals to the multiplexing address latch. The multiplexing address latch is configured to output a first address signal in response to the first internal clock pulse and a second address signal in response to the second internal clock pulse.
摘要:
A driving circuit includes a driving stage with a first level shifter and a second level shifter. The first level shifter includes an input terminal receiving a first control signal, an inverted input terminal receiving an inverted first control signal, a first output terminal, and a second output terminal. The second level shifter includes an input terminal receiving a second control signal, an inverted input terminal receiving an inverted second control signal, a third output terminal, and a fourth output terminal. The first output terminal and the third output terminal are connected with each other to generate an output signal. The second output terminal and the fourth output terminal are connected with each other to generate an inverted output signal. Moreover, only one of the first level shifter and the second level shifter is enabled according to an operation mode of the driving circuit.
摘要:
A memory (10) includes a memory array (12) having a plurality of word lines (WL), a plurality of latching predecoders (18), and word line driver logic (14). Each latching predecoder receives a clock signal (CLK) and a plurality of address signals (A0, A0b) and latches a result of a logic function of the plurality of address signals in response to a first edge of a clock cycle of the clock signal and provides a predetermined value in response to a second edge of the first clock cycle of the clock signal, wherein, in response to the second edge, every latching decoder of the plurality of latching predecoders provides a same predetermined value. The word line driver logic selectively activates a selected word line of the plurality of word lines in response to the latched results.
摘要:
A circuit for synchronizing row and column access operations in a semiconductor memory having an array of bit lines pairs, word lines, memory cells, sense amplifiers, and a sense amplifier power supply circuit for powering the sense amplifiers, the circuit comprising, a first delay circuit for delaying a word line timing pulse by a first predetermined period, a first logic circuit for logically combining the word line timing pulse and the delayed word line timing pulse to produce a sense amplifier enable signal, for enabling a sense amplifier power supply circuit, a second delay circuit for delaying the word line timing pulse by a second predetermined period, and a second logic circuit for logically combining the word line timing pulse and the second delayed word line timing pulse to produce a column select enable signal, for enabling selected ones of a plurality of column access devices wherein the second predetermined time period is selected so that ones of a plurality of column access devices are activated after the sense amplifier power supply circuit is enabled.
摘要:
A system includes a system controller (102) and a configuration of series-connected semiconductor devices (104). Such a device includes an input for receiving a clock signal originating from a previous device, and an output for providing a synchronized clock signal destined for a succeeding device. The device further includes a clock synchronizer (110) for producing the synchronized clock signal by processing the received clock signal and an earlier version of the synchronized clock signal. The device further includes a device controller for adjusting a parameter used by the clock synchronizer in processing the earlier version of the synchronized clock signal. The system controller further includes a detector (506) for processing the first and second clock signals (S TCK ,S RCK ) to detect a phase difference therebetween; and a synchronization controller (508) for commanding an adjustment to the clock synchronizer in at least one of the devices based on the phase difference (S DIFF ) detected by the detector.
摘要:
A serial input processing apparatus provides how to capture serial data without loss of a single bit while command interpretation is being performed in a command decoder at high frequency. Individual bytes of serial bits of a pre-defined sequence are latched and bit streams are temporarily stored with multiple clocks. The temporary store is conducted before transferring byte information to assigned address registers to register the address. The address registration and the data registration are performed by latching all bit streams of the serial input at the leading edges of clocks. While at a high frequency operation (e.g., 1 GHz or 1 ns cycle time), no additional registers are required for storing bit data during command interpretation with enough time margins between the command bit stream interpretation and next bit data stream.
摘要:
In a method for reducing detrimental phenomena related to disturb voltages in a data storage apparatus employing passive matrix addressing, particularly a memory device or a sensor device, an application of electric potentials conforming to an addressing operation is generally controlled in a time-coordinated manner according to a voltage pulse protocol. In an addressing operation a data storage cell is set to a first polarization state by means of a first active voltage pulse and then, dependent on the voltage pulse protocol, a second voltage pulse which may be a second active voltage pulse of opposite polarity to that of the first voltage pulse, is applied and used for switching the data storage cell to a second polarization state. The addressed cell is thus set to a predetermined polarization state as specified by the addressing operation. The data storage cells of the apparatus are provided in two or more electrically separated segments such that each segment comprises a separate physical address space for the apparatus. In an addressing operation the data are directed to a segment that is selected based on information on prior and/or scheduled applications of active voltage pulses to the segments.