摘要:
A semiconductor memory system includes a memory device including plural banks, and a memory controller that generates an offset address for a first bank among the plural banks and a command indicating the offset address, based on a first request. The memory device generates a first address by adding the offset address to a base address for the first bank, according to the command, and performs a memory operation on the first address of the first bank according to the command.
摘要:
A system and method that includes a memory die, residing on a stacked memory, which is organized into a plurality of mats that include data. The system and method also includes an additional memory die, residing on the stacked memory, that is organized into an additional plurality of mats and connected to the memory die by a Through Silicon Vias (TSVs), the data to be transmitted along the TSVs.
摘要:
Examples of the present disclosure provide apparatuses and methods related to generating and executing a control flow. An example apparatus can include a first device configured to generate control flow instructions, and a second device including an array of memory cells, an execution unit to execute the control flow instructions, and a controller configured to control an execution of the control flow instructions on data stored in the array.
摘要:
Disclosed herein is a semiconductor device that includes a command decoder activating a first mode register setting signal in response to a mode register setting command supplied from outside, a first latency shifter activating a second mode register setting signal after elapse of predetermined cycles of a clock signal since the first mode register setting signal is activated, and a mode register storing a mode signal supplied from outside in response to the second mode register setting signal.
摘要:
Disclosed herein is a semiconductor device that includes a command decoder activating a first mode register setting signal in response to a mode register setting command supplied from outside, a first latency shifter activating a second mode register setting signal after elapse of predetermined cycles of a clock signal since the first mode register setting signal is activated, and a mode register storing a mode signal supplied from outside in response to the second mode register setting signal.
摘要:
A circuit for synchronizing row and column access operations in a semiconductor memory having an array of bit lines pairs, word lines, memory cells, sense amplifiers, and a sense amplifier power supply circuit for powering the sense amplifiers, the circuit comprising, a first delay circuit for delaying a word line timing pulse by a first predetermined period, a first logic circuit for logically combining the word line timing pulse and the delayed word line timing pulse to produce a sense amplifier enable signal, for enabling a sense amplifier power supply circuit, a second delay circuit for delaying the word line timing pulse by a second predetermined period, and a second logic circuit for logically combining the word line timing pulse and the second delayed word line timing pulse to produce a column select enable signal, for enabling selected ones of a plurality of column access devices wherein the second predetermined time period is selected so that ones of a plurality of column access devices are activated after the sense amplifier power supply circuit is enabled.
摘要:
Described is a memory system in which the memory core organization changes with device width. The number of physical memory banks accessed reduces with device width, resulting in reduced power usage for relatively narrow memory configurations. Increasing the number of logic memory banks for narrow memory widths reduces the likelihood of bank conflicts, and consequently improves speed performance.