SENSOR, IN PARTICULAR MEMS SENSOR, FOR THE GENERATION OF AN OUTPUT DIGITAL SIGNAL, COUPLEABLE TO A PLURALITY OF SENSORS IN AN ELECTRONIC APPARATUS

    公开(公告)号:EP4067830A1

    公开(公告)日:2022-10-05

    申请号:EP22165663.0

    申请日:2022-03-30

    Abstract: The integrated sensor (5A-5C) is configured to receive a frequency-indication signal (EXT_REF) and to supply an output digital signal (S O ) formed by a plurality of samples. The integrated sensor has a digital detector (48), which detects a physical quantity and generates a discrete detection signal (S D ) indicative of the detected physical quantity; an output timing regulation block (80, 83), which receives the frequency-indication signal and a set of local reference signals (CLK, INT_REF) and generates a trigger signal (OUT_TRG) as a function of the frequency-indication signal and of the set of local reference signals; and an output stage (49), which receives the discrete detection signal and the trigger signal (OUT_TRG) and supplies the digital output signal (S O ) and a locking signal (EXT_REF, INT_REF). The output stage (49) supplies a sample of the discrete detection signal in response to the reception of the trigger signal, thus generating the digital output signal, and supplies the locking signal in response to the reception of the trigger signal. The locking signal is temporally aligned with the digital output signal.

    ELECTRONIC SYSTEM FOR DRIVING LIGHT SOURCES AND METHOD OF DRIVING LIGHT SOURCES

    公开(公告)号:EP4064794A2

    公开(公告)日:2022-09-28

    申请号:EP22305278.8

    申请日:2022-03-11

    Abstract: A system (100') comprises a microcontroller unit (102) and a driver device (101) coupled (105) to the microcontroller unit (102) to receive data therefrom. The driver device (101) comprises a plurality of output supply pins (101C 1 , ..., 101C n ) and is configured to selectively propagate (30 1 , ..., 30 n ) a supply voltage ( V BAT ) to the output supply pins (101C 1 , ..., 101C n ) to provide respective pulse-width modulated supply signals ( V BAT,1 , ..., V BAT,n ) at the output supply pins (101C 1 , ..., 101C n ). The driver device (101) is configured to compute respective duty-cycle values of the pulse-width modulated supply signals ( V BAT,1 , ..., V BAT,n ) as a function of the data received from the microcontroller unit (102) . The system further comprises a plurality of lighting devices (31 1,1 , ..., 31 1,m , 31 n ) coupled to the plurality of output supply pins (101C 1 , ..., 101C n ). The plurality of lighting devices (31 1,1 , ..., 31 1,m , 31 n ) comprises at least one subset of lighting devices (31 1,1 , ..., 31 1,m ) coupled to a same output supply pin (101C 1 ) in the plurality of output supply pins (101C 1 , ..., 101C n ). The system further comprises a set of respective electronic switches coupled in series to the lighting devices in the at least one subset of lighting devices (31 1,1 , ..., 31 1,m ). The microcontroller unit (102) is configured to individually control the electronic switches via respective control signals ( P 1,1 , ..., P 1,m ) to individually adjust a brightness of the lighting devices in the at least one subset of lighting devices (31 1,1 , ..., 31 1,m ).

    PROCESSING SYSTEM, RELATED INTEGRATED CIRCUIT, DEVICE AND METHOD

    公开(公告)号:EP4064100A1

    公开(公告)日:2022-09-28

    申请号:EP22161788.9

    申请日:2022-03-14

    Abstract: A processing system (10a) is described. The processing system (10a) comprises a microprocessor (1020), a hardware circuit (110) configured to change operation as a function of decoded life-cycle data (LC) and a non-volatile memory (104) configured to stored encoded life-cycle data (LCD). A hardware configuration circuit (108) is configured to read the encoded life-cycle data (LCD) from the non-volatile memory (104), decode the encoded life-cycle data (LCD) and provide the decoded life-cycle data (LC) to the hardware circuit (110). The processing system comprises also a reset circuit (116) configured to monitor an external reset signal received via a reset terminal (RP) and, in response to determining that the external reset signal has a first logic level, execute a reset phase (3002), a configuration phase (CP1) and a wait phase (3022), where the reset circuit (116) waits until the external reset signal has a second logic level.
    In particular, the processing system comprises also a communication interface (IF_JTAG) activated during the wait phase (3022) and configured to receive a request (REQ), and a hardware verification circuit (130) configured to generate a life-cycle advancement request signal (LCFA_REQ) when the request (REQ) comprises a given reference password (RK) and the reset circuit (116) is in the wait phase (3022). A write circuit (1044w) of the non-volatile memory (104) may thus write one or more bits of the encoded life-cycle data (LCD) stored in the non-volatile memory (104) when the life-cycle advancement request signal (LCFA_REQ) is set, thereby advancing the life-cycle to a given predetermined life-cycle stage.

    VERTICAL-CONDUCTION SILICON CARBIDE MOSFET DEVICE HAVING IMPROVED GATE BIASING STRUCTURE AND MANUFACTURING PROCESS THEREOF

    公开(公告)号:EP4047664A1

    公开(公告)日:2022-08-24

    申请号:EP22155166.6

    申请日:2022-02-04

    Abstract: A vertical-conduction MOSFET device (50) formed in a body (55) of silicon carbide having a first and a second face (52A, 52B) and a peripheral zone (87). A drain region (57), of a first conductivity type, extends in the body (55) between the two faces. A body region (60), of a second conductivity type, extends in the body from the first face (55A), and a source region (65), having the first conductivity type, extends to the inside of the body region (60) from the first face (55A) of the body. An insulated gate region (70) extends on the first face of the body and comprises a gate conductive region (72). An annular connection region (86), of conductive material, is formed within a surface edge structure extending on the first face (55A) of the body (55), in the peripheral zone (87). The gate conductive region (72) and the annular connection region (86) are formed by a silicon layer and by a metal silicide layer overlying the silicon layer.

    PACKAGED ELECTRONIC SYSTEM FORMED BY ELECTRICALLY CONNECTED AND GALVANICALLY ISOLATED DICE

    公开(公告)号:EP4036968A1

    公开(公告)日:2022-08-03

    申请号:EP22153019.9

    申请日:2022-01-24

    Abstract: A packaged electronic system having a support (55) formed by an insulating organic substrate housing a buried conductive region (56) that is floating. A first die (51) is fixed to the support and carries, on a first main surface, a first die contact region (67) capacitively coupled to a first portion of the buried conductive region. A second die (52) is fixed to the support and carries, on a first main surface, a second die contact region (67) capacitively coupled to a second portion of the buried conductive region. A packaging mass (77) encloses the first die (51), the second die (52), the first die contact region, the second die contact region, and, at least partially, the support (55).

    HARDWARE ACCELERATOR DEVICE, CORRESPONDING SYSTEM AND METHOD OF OPERATION

    公开(公告)号:EP4009174A3

    公开(公告)日:2022-08-03

    申请号:EP21209056.7

    申请日:2021-11-18

    Abstract: A hardware accelerator device comprises a set of processing circuits (160) arranged in subsets, a set of data memory banks coupled to a memory controller, a control unit, and an interconnect network (162). The processing circuits (160) are configurable to read (200) first input data from said data memory banks via the interconnect network (162) and the memory controller, process (20) said first input data to produce output data, and write (204) said output data into said data memory banks via the interconnect network (162) and the memory controller. The hardware accelerator device comprises a set of configurable lockstep control units (169) which interface the processing circuits (160) to the interconnect network (162). Each configurable lockstep control unit (169) is coupled to a subset of processing circuits (160) and is selectively activatable to operate in a first operation mode, or in a second operation mode. In the first operation mode, the lockstep control unit (169) is configured to compare data read requests and/or data write requests issued towards said memory controller by a first (160 0 ) and a second (160 1 ) processing circuits in the subset of processing circuits to detect a fault. In the second operation mode, the lockstep control unit (169) is configured to propagate towards said memory controller said data read requests and/or data write requests issued by the first (160 0 ) and by the second (160 1 ) processing circuits in the subset of processing circuits (160).

    MEMS MICROPARTICLE SENSOR
    68.
    发明公开

    公开(公告)号:EP4024025A1

    公开(公告)日:2022-07-06

    申请号:EP21217995.6

    申请日:2021-12-28

    Abstract: A MEMS sensing device (200, 200', 200", 200‴) for sensing microparticles in an environment external to the MEMS sensing device is provided. The MEMS sensing device comprises a semiconductor body (125) integrating a sensor and a pump (205; 205(1), 205(2); 205(1)(a), 205(1)(b), 205(2)(a), 205(2)(b)), the sensor including (100) a sensor cavity (130), a membrane (110) suspended over the sensor cavity (130), and a piezoelectric element (120) over the membrane (110) and configured to cause the membrane to oscillate, about an equilibrium position, at a corresponding resonance frequency when sensing electric signals are applied to the piezoelectric element during a first operative phase of the MEMS sensing device, the resonance frequency depending on an amount of microparticles located on the membrane, the membrane having a plurality of through holes (168) for establishing a fluid communication between the sensor cavity (130) and the environment; the pump is configured to cause air pressure in the sensor cavity (130) to be reduced with respect to the air pressure of the environment during the first operative phase, so that microparticles are caused to adhere onto the membrane (110) by a suction force through the through holes (168).

    PACKAGED ELECTRONIC DEVICE WITH HIGH THERMAL DISSIPATION AND MANUFACTURING PROCESS THEREOF

    公开(公告)号:EP4020547A2

    公开(公告)日:2022-06-29

    申请号:EP21215266.4

    申请日:2021-12-16

    Abstract: The packaged power electronic device (1) has a bearing structure (15) including a base section (16) and a transverse section (17) extending transversely to the base section. A die (2) is bonded to the base section of the bearing structure and has a first terminal (11) on a first main face (2A) and a second and a third terminal (12, 13) on a second main face (2B). A package (5) of insulating material embeds the semiconductor die (2), the second terminal (12), the third terminal (13) and at least partially the carrying base (16). A first, a second and a third outer connection region (36, 31, 33) are electrically coupled to the first, the second and the third terminals of the die, respectively, are laterally surrounded by the package and face the second main surface (5B) of the package. The transverse section (17) of the bearing structure extends from the base section (16) towards the second main surface of the package and has a higher height with respect to the die.

    MICROELECTROMECHANICAL GYROSCOPE AND METHOD FOR COMPENSATING AN OUTPUT THERMAL DRIFT IN A MICROELECTROMECHANICAL GYROSCOPE

    公开(公告)号:EP4006490A1

    公开(公告)日:2022-06-01

    申请号:EP21210761.9

    申请日:2021-11-26

    Abstract: A microelectromechanical gyroscope includes: the support structure (6); a sensing mass (3), coupled to the support structure (6) with degrees of freedom along a driving direction (DD) and a sensing direction (DS) perpendicular to each other; and a calibration structure (5) facing the sensing mass (3) and separated from the sensing mass (3) by a gap (21) having an average width (W), the calibration structure (5) being movable with respect to the sensing mass (3) so that displacements of the calibration structure (5) cause variations in the average width (W) of the gap (21) . A calibration actuator (20, 30) controls a relative position of the calibration structure (5) with respect to the sensing mass (3) and the average width (W) of the gap (21).

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