PACKAGED ELECTRONIC SYSTEM FORMED BY ELECTRICALLY CONNECTED AND GALVANICALLY ISOLATED DICE

    公开(公告)号:EP4036968A1

    公开(公告)日:2022-08-03

    申请号:EP22153019.9

    申请日:2022-01-24

    Abstract: A packaged electronic system having a support (55) formed by an insulating organic substrate housing a buried conductive region (56) that is floating. A first die (51) is fixed to the support and carries, on a first main surface, a first die contact region (67) capacitively coupled to a first portion of the buried conductive region. A second die (52) is fixed to the support and carries, on a first main surface, a second die contact region (67) capacitively coupled to a second portion of the buried conductive region. A packaging mass (77) encloses the first die (51), the second die (52), the first die contact region, the second die contact region, and, at least partially, the support (55).

    MEMS TRIAXIAL MAGNETIC SENSOR WITH IMPROVED CONFIGURATION

    公开(公告)号:EP3346281A1

    公开(公告)日:2018-07-11

    申请号:EP17172105.3

    申请日:2017-05-20

    CPC classification number: G01R33/0206 G01R33/0023 G01R33/0286 G01R33/038

    Abstract: A MEMS triaxial magnetic sensor device (51) is provided with a sensing structure (2) having: a substrate (6); an outer frame (4), which internally defines a window (5) and is elastically coupled to first anchorages (7) fixed with respect to the substrate by means of first elastic elements (8); a mobile structure (10) arranged in the window, suspended above the substrate, which is elastically coupled to the outer frame by second elastic elements (12) and carries a conductive path (P) for flow of an electric current (I); and an elastic arrangement (22, 24) operatively coupled to the mobile structure. The mobile structure performs, due to the first and second elastic elements and of the arrangement of elastic elements, a first sensing movement in response to Lorentz forces originating from a first magnetic-field component (B x ), a second sensing movement in response to Lorentz forces originating from a second magnetic-field component (B y ), and a third sensing movement in response to Lorentz forces originating from a third magnetic-field component (B z ); the first, second, and third sensing movements are distinct and decoupled from one another.

    PIEZOELECTRIC MEMS ACTUATOR FOR COMPENSATING UNWANTED MOVEMENTS AND MANUFACTURING PROCESS THEREOF

    公开(公告)号:EP3745482A1

    公开(公告)日:2020-12-02

    申请号:EP20176144.2

    申请日:2020-05-22

    Abstract: A MEMS actuator (100) including a monolithic body (101) of semiconductor material, including a supporting portion (102) of semiconductor material, orientable with respect to a first and to a second rotation axis (A, B), transverse to each other; a first frame (104) of semiconductor material with a hexagonal shape, coupled to the supporting portion through first deformable elements (115) configured to control a rotation of the supporting portion about the first rotation axis (A); and a second frame (108) of semiconductor material with a regular quadrangular shape, coupled to the first frame by second deformable elements (116), coupled between the first and the second frames and configured to control a rotation of the supporting portion about the second rotation axis (B). The first and the second deformable elements carry respective piezoelectric actuation elements (150).

    MEMS COMPRISING A MEMBRANE AND AN ACTUATOR FOR CONTROLLING THE CURVATURE OF THE MEMBRANE

    公开(公告)号:EP3441358A1

    公开(公告)日:2019-02-13

    申请号:EP18187742.4

    申请日:2018-08-07

    Abstract: MEMS device (21; 61; 91; 101) including: a semiconductor support body (22) having a first cavity (24); a membrane (26; 56; 106) including a peripheral portion, fixed to the support body (22), and a suspended portion; a first deformable structure (45; 68; 98) at a distance from a central part of the suspended portion of the membrane (26; 56; 106); a second deformable structure (44; 66; 96) laterally offset relative to the first deformable structure (45; 68; 98) towards the peripheral portion of the membrane (26; 56; 106); and a projecting region (40) fixed under the membrane (26; 56; 106); and wherein the second deformable structure (44; 66; 96) is deformable so as to translate the central part of the suspended portion of the membrane (26; 56; 106) along a first direction; and wherein the first deformable structure (45; 68; 98) is deformable so as to translate the central part of the suspended portion of the membrane (26; 56; 106) along a second direction.

    INTEGRATED AMR MAGNETORESISTOR WITH LARGE SCALE
    9.
    发明公开
    INTEGRATED AMR MAGNETORESISTOR WITH LARGE SCALE 审中-公开
    INTEGRIERTER AMR-MAGNETORESISTOR MIT GROSSEM MASSSTAB

    公开(公告)号:EP3109657A1

    公开(公告)日:2016-12-28

    申请号:EP15200291.1

    申请日:2015-12-15

    Abstract: An integrated AMR magnetoresistive sensor (20) having a magnetoresistor (21), a set/reset coil (22), and a shielding region (23) arranged on top of each other, with the set/reset coil (22) arranged between the magnetoresistor and the shielding region. The magnetoresistor (21) is formed by a magnetoresistive strip (24) of an elongated shape having a length in a first direction (X) parallel to the preferential magnetization direction (EA) and a width in a second direction (Y) perpendicular to the first direction. The set/reset coil (22) has at least one stretch (34a, 34b) extending transversely to the magnetoresistive strip. The shielding region (23) is a ferromagnetic material and has a width in the second direction (Y) greater than the width of the magnetoresistive strip (24) so as to attenuate the external magnetic field (H) traversing the magnetoresistive strip (24) and increasing the sensitivity scale of the magnetoresistive sensor.

    Abstract translation: 一种集成的AMR磁阻传感器(20),其具有设置/复位线圈(22)设置在彼此顶部的磁阻(21),设定/复位线圈(22)和屏蔽区域(23) 磁敏电阻和屏蔽区域。 磁阻电阻器(21)由具有与优先磁化方向(EA)平行的第一方向(X)的长度的细长形状的磁阻条(24)形成,并且垂直于第二方向(Y)的宽度 第一个方向 设置/复位线圈(22)具有横向于磁阻带延伸的至少一个延伸部(34a,34b)。 屏蔽区域(23)是铁磁材料,并且具有大于磁阻条(24)的宽度的第二方向(Y)的宽度,以便衰减穿过磁阻条带(24)的外部磁场(H) 并增加磁阻传感器的灵敏度。

Patent Agency Ranking