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公开(公告)号：EP0748260A1
公开(公告)日：1996-12-18
申请号：EP95913564.0
申请日：1995-03-01
申请人： DIAMONEX
CPC分类号： C23C16/30 , C23C16/0245 , C23C16/308 , C23C16/325 , C23C16/345 , C23C16/513
摘要： An ion beam deposition method is provided for manufacturing a coated substrate with improved abrasion resistance, and improved lifetime. The substrate is first chemically cleaned to remove contaminants. Secondly, the substrate is inserted into a vacuum chamber (1) on holder (3), and the air therein is evacuated via pump (2). Then the substrate surface is bombarded with energetic ions from ion beam source (4) supplied from inert (5) or reactive (6) gas inlets to assist in removing residual hydrocarbons and surface oxides, and activating the surface. After sputter-etching the surface, a protective, abrasion-resistant coating is deposited by ion beam deposition where reactive gas inlets (7, 8 and 9) may be employed. The ion beam-deposited coating may contain one or more layers. Once the chosen coating thickness is achieved, deposition is terminated, vacuum chamber pressure is increased to atmospheric pressure and the coated substrate products having improved abrasion-resistance are removed from the chamber. These coated products may be plastic sunglass lenses, ophthalmic lenses, bar codes scanner windows, and industrial wear parts needing protection from scratches and abrasion.
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62.发明公开
公开(公告)号：EP0737258A1
公开(公告)日：1996-10-16
申请号：EP95906660.0
申请日：1994-12-19
CPC分类号： C23C16/513 , C23C16/0245 , C23C16/26 , C30B25/105 , C30B29/04
摘要： A process for depositing amorphous or nanophase diamondlike carbon (DLC) and a-C:H carbon/hydrogen films with variable and controllable properties on the surface of a substrate is disclosed. The process utilizes a combined hydrocarbon ion beam and plasma-activated hydrocarbon gaseous radical flux produced by an end-Hall ion source to yield a film with good electron-emissivity characteristics or high hardness and good optical transparency, as desired. A second ion source providing a beam of argon ions above or together in nitrogen is optionally directed at the substrate for cleaning prior to deposition and for ion-assisted deposition during deposition or for doping.
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63.发明公开Verfahren und Vorrichtung zur Behandlung von Substratoberflächen 失效Verfahren und Vorrichtung zur Behandlung vonSubstratoberflächen
公开(公告)号：EP0727508A1
公开(公告)日：1996-08-21
申请号：EP96102259.7
申请日：1996-02-15
CPC分类号： H01J37/32449 , C23C16/452 , C23C16/50 , C23C16/513 , H01J37/32596
摘要： Die Erfindung betrifft ein Verfahren und eine Vorrichtung zur Behandlung von Substratoberflächen, insbesondere der Beschichtung, dem Abtrag von Schichten oder von Teilen der Oberfläche und der Aktivierung für eine nachfolgende Beschichtung.
Bei dem erfindungsgemäßen Verfahren wird:
a) Plasma mit einer Hohlkathoden-Glimmentladung im Vakuum erzeugt,
b) ein Reaktivgasstrom in das zwischen dem substratseitigen Ende der Hohlkathode und dem Substrat vorhandene Plasma geführt,
c) ein Inertgasstrom durch die Hohlkathode so geführt wird, daß die durch das Plasma angeregten Teilchen in Richtung auf das Substrat beschleunigt werden, und
d) die Plasmabedingungen und/oder die Inertgasführung so eingestellt, daß eine Reaktion von Reaktivgas und Kathodenmaterial weitestgehend unterbunden wird.摘要翻译： 惰性气体等离子体通过真空中的中空阴极（2）的辉光放电产生，并且被引向基板（1）。 通过在阴极和衬底之间的流或扩散来传递反应气流。 调节惰性气体等离子体的等离子体条件和/或输送，从而大大地防止反应气体和阴极材料之间的反应。 通过来自其供应单元（4）的惰性气体流（4）来防止反应气体进入中空阴极的排出区域。
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公开(公告)号：EP0724026A1
公开(公告)日：1996-07-31
申请号：EP96100200.3
申请日：1996-01-09
CPC分类号： C23C16/276 , C23C16/342 , C23C16/347 , C23C16/4584 , C23C16/513 , H01J37/32055 , H05H1/50
摘要： Für die Behandlung von Werkstücken mittels eines reaktiven Prozesses wird ein gebündelter Plasmastrahl (1) erzeugt und die zu behandelnden Werkstückoberflächen werden entlang einer zur Plasmastrahlachse (A) koaxialen Rotationsfläche (F) verteilt und zwar in einem Bereich, in welchem die Plasmadichte höchstens 20% der im Zentrum des Strahls vorherrschenden Plasmadichte beträgt.
摘要翻译： 在真空容器（10）中产生等离子体束（1），而工件平行于射束轴线（A）设置，其中径向偏离。 将新鲜的反应气体（R）引入容器中，而从其中吸入使用的气体。 该方法的特征在于，待同时处理的工件沿着等离子体束周围的细长旋转表面布置。 appts。 包括同轴围绕等离子体束的工件载体系统（24）。
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公开(公告)号：EP0712530A1
公开(公告)日：1996-05-22
申请号：EP93919872.0
申请日：1993-08-03
CPC分类号： G11B5/725 , C23C16/26 , C23C16/513 , G11B5/72 , G11B5/8408
摘要： The present invention provides a magnetic recording medium that includes a polymeric flexible substrate and a magnetic layer coating thereon, with a binderless carbon rich layer adhered to the magnetic layer. The present invention also provides a process for the plasma deposition of the carbon rich coating onto a substrate comprising the steps of: a) providing a substrate in a vacuum chamber; b) generating carbon rich plasma in the vacuum chamber by injecting a plasma gas suitable to provide a carbon rich coating into an elongated hollow cathode; and providing a sufficient voltage to create and maintain plasma; and maintaining a vacuum in the vacuum chamber sufficient for the plasma; and c) exposing the substrate to the plasma while the magnetic medium is influenced by a radio frequency bias electrode to accelerate the plasma toward the substrate and deposit the carbon rich coating on the substrate.
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公开(公告)号：EP0617142A1
公开(公告)日：1994-09-28
申请号：EP94302160.0
申请日：1994-03-25
CPC分类号： C23C16/402 , C23C16/513
摘要： A silica thin film is formed by establishing an atmospheric pressure glow discharge beam plasma using an inert gas as a main gas, feeding a silane compound, typically tetramethoxysilane in vapor form to the plasma, and depositing a silica thin film on a substrate, typically a plastic film. The method enables to deposit a silica thin film of quality on various substrates in the ambient atmosphere, at relatively low temperatures and within a short time.
摘要翻译： 通过使用惰性气体作为主要气体来建立大气压辉光放电等离子体来形成二氧化硅薄膜，将硅烷化合物（通常为蒸汽形式的四甲氧基硅烷）供给到等离子体中，并将二氧化硅薄膜沉积在基底上，通常为 塑料薄膜。 该方法能够在相对较低的温度和短时间内在环境气氛中在各种基底上沉积质量的二氧化硅薄膜。
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公开(公告)号：EP0562035A1
公开(公告)日：1993-09-29
申请号：EP92903855.0
申请日：1991-12-11
CPC分类号： H01J37/32623 , C23C16/4401 , C23C16/513 , H01J37/32633
摘要： Procédé de régulation de la qualité du dépôt de surfaces de visée et cible dans un appareil de dépôt chimique en phase vapeur activée au plasma. L'invention concerne également un appareil de régulation de la qualité du dépôt de surfaces de visée et cible dans un appareil de dépôt chimique en phase vapeur activée au plasma. L'appareil comprend un écran à plasma (6) doté d'une surface de visée (10) et d'une cible de plasma (7) comportant une surface cible. La surface de visée (10) définit un alésage (9) à travers l'écran à plasma (6) et n'est pas en contact direct avec un courant de plasma, tel que de l'oxygène, passant de la chambre de plasma (2), par l'intermédiaire de l'alésage (9), dans une chambre de réaction (3). Un échantillon à semiconducteur est monté sur un support (5) dans la chambre de réaction (3). La surface cible entoure l'échantillon. Les surfaces de visée et cible (10) sont maintenues à une température constante par circulation d'un milieu fluide dans les passages de fluide (11) se trouvant dans l'écran à plasma (6) et la cible de plasma (7). Ladite cible de plasma (7) peut comprendre une plaque amovible (33) sur une face de laquelle se trouve la surface cible. L'écran à plasma peut comprendre un anneau à gaz amovible (24) destiné à éjecter du gaz tel que SiH4 dans l'alésage.
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68.发明公开Process for forming diamond coatings using a silent discharge plasma jet process 失效使用静电放电等离子体喷射工艺形成钻石涂料的方法
公开(公告)号：EP0394735A3
公开(公告)日：1991-01-23
申请号：EP90106785.0
申请日：1990-04-09
CPC分类号： C23C16/276 , C23C16/277 , C23C16/513
摘要： A process for forming diamond coatings is disclosed, in which a gas or a mixture of gases is passed through a low temperature silent discharge to generate a low temperature non-equilibrium plasma gas stream, the plasma gas stream is adiabatically expanded into a region of lover pressure to ford a plasma gas stream of highly ionized and dissociated gases, a carbon-containing gas is injected into the plasma gas stream during or after the expansion into a region of lower pressure, and the plasma gas stream is then directed onto the surface of a substrate to form the diamond coating.
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69.发明公开Process for forming diamond coatings using a silent discharge plasma jet process 失效Verfahren zur Herstellung von Diamantschichten mittels einesPlasmasprühverfahrensmit stiller Entladung。
公开(公告)号：EP0394735A2
公开(公告)日：1990-10-31
申请号：EP90106785.0
申请日：1990-04-09
CPC分类号： C23C16/276 , C23C16/277 , C23C16/513
摘要： A process for forming diamond coatings is disclosed, in which a gas or a mixture of gases is passed through a low temperature silent discharge to generate a low temperature non-equilibrium plasma gas stream, the plasma gas stream is adiabatically expanded into a region of lover pressure to ford a plasma gas stream of highly ionized and dissociated gases, a carbon-containing gas is injected into the plasma gas stream during or after the expansion into a region of lower pressure, and the plasma gas stream is then directed onto the surface of a substrate to form the diamond coating.
摘要翻译： 公开了一种用于形成金刚石涂层的方法，其中气体或气体混合物通过低温无声放电以产生低温非平衡等离子体气流，等离子体气流被绝热地扩展到情人的区域 施加高度电离和离解气体的等离子体气体流的压力，在膨胀期间或之后将含碳气体注入到等离子体气体流中，并将等离子体气体流引导到 形成金刚石涂层的基材。
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公开(公告)号：EP3067914B1
公开(公告)日：2018-11-28
申请号：EP16159924.6
申请日：2016-03-11
发明人： ARCHARD, Daniel , BURGESS, Stephen , CARRUTHERS, Mark , CROOK, Kathrine , PRICE, Andrew , BUCHANAN, Keith
IPC分类号： H01J37/32
CPC分类号： C23C16/455 , C23C16/513 , H01J37/32633 , H01J37/32834
摘要： According to the invention there is provided a plasma-enhanced chemical vapour deposition (PE-CVD) apparatus comprising: a chamber comprising a circumferential pumping channel; a substrate support disposed within the chamber; one or more gas inlets for introducing gas into the chamber; a plasma production device for producing a plasma in the chamber; and an upper and a lower element positioned in the chamber; wherein: the upper element is spaced apart from the substrate support to confine the plasma and to define a first circumferential pumping gap, and the upper element acts as a radially inward wall of the circumferential pumping channel; and the upper and lower elements are radially spaced apart to define a second circumferential pumping gap which acts as an entrance to the circumferential pumping channel, in which the second circumferential pumping gap is wider than the first circumferential pumping gap.
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