MESSER ZUM SCHNEIDEN LAUFENDER MATERIALBAHNEN
    62.
    发明公开
    MESSER ZUM SCHNEIDEN LAUFENDER MATERIALBAHNEN 有权
    刀切割RUNNING材料片材

    公开(公告)号:EP1113908A1

    公开(公告)日:2001-07-11

    申请号:EP99944518.2

    申请日:1999-08-26

    IPC分类号: B26D1/00 C23C14/48

    摘要: The invention relates to blades for cutting moving lines of material, especially for cutting lines of paper or cardboard, plastic films or metal foils. Known blades (1, 2) have a blade body (3) with a steel cutting edge (5). According to the invention, foreign ions are inserted between layers in the cutting edge (5) by means of a plasma-assisted process, the penetration depth being between 50 νm and 500 νm, preferably between 100 νm and 200 νm. The doping of foreign ions in the metal lattice produces an improvement in hardness which is optimal for cutting without causing the steel to become too brittle. The inventive blades therefore have a long service life, even when used to cut lines of paper or cardboard, which can be abrasive, and are still economical to produce.

    Pulsed plate plasma implantation method and apparatus
    65.
    发明公开
    Pulsed plate plasma implantation method and apparatus 失效
    通过脉冲板的装置的方法和装置用于Plasmaionenimplantierung

    公开(公告)号:EP0838840A3

    公开(公告)日:1999-06-23

    申请号:EP97307902.3

    申请日:1997-10-07

    申请人: EATON CORPORATION

    IPC分类号: H01J37/32 C23C14/48 C30B31/22

    CPC分类号: H01J37/32412 C23C14/48

    摘要: Method and apparatus for treating a workpiece implantation surface (120) by causing ions to impact the workpiece implantation surface (120). An implantation chamber (12) defines a chamber interior (24) into which one or more workpieces (14) can be inserted. A support (30) positions one or more workpieces (14) within an interior region (34) of the implantation chamber (12) so that implantation surfaces (120) of the workpieces (14) are facing the interior region (34). A dopant material in the form of a gas is injected into the implantation chamber (12) to cause the gas to occupy a region (34) of the implantation chamber (12) in close proximity to the one or more workpieces (14). A plasma of implantation material is created within the interior region (34) of the implantation chamber (12). First and second conductive electrodes (30, 32) positioned within the implantation chamber (12) include conductive surfaces in proximity to the chamber interior (24, 34) occupied by the one or more workpieces (12). A voltage source outside the chamber relatively biases the first and second conductive electrodes (30, 32). A control circuit (100) utilizes the voltage source for repeatedly relatively biasing the first and second conductive electrodes (30, 32) to energize the electrodes (30, 32) with a sequence of pulses (112, N, P) that both ionize the gas molecules injected into the chamber (12) and accelerate the ionized gas molecules toward the implantation surfaces (120) of the one or more workpieces (14).

    Plasma immersion ion implantation method and apparatus with pulsed anode
    66.
    发明公开
    Plasma immersion ion implantation method and apparatus with pulsed anode 失效
    Verfahren undGerätzur Plasmammersionionenenplantation mit gepulster Anode

    公开(公告)号:EP0860854A1

    公开(公告)日:1998-08-26

    申请号:EP97310600.8

    申请日:1997-12-24

    申请人: EATON CORPORATION

    CPC分类号: H01J37/32412 C23C14/48

    摘要: Method and apparatus for treating a workpiece implantation surface by causing ions to impact the workpiece implantation surface. An implantation chamber (12) defines a chamber interior into which one or more workpieces can be inserted and includes a conductive inner wall portion (22) in proximity to the chamber interior. A conductive workpiece support (30) extends into an interior region of the implantation chamber. A conductive electrode (32) is disposed within said implantation chamber relative to said conductive workpiece support to allow workpieces to be placed on the workpiece support in a region (34) between the support and the conductive electrode. Gas molecules are injected into the implantation chamber to cause the gas molecules to occupy a region of the implantation chamber in close proximity to the one or more workpieces. The gas molecules are ionized near an implant surface of the workpieces. Control circuitry (100) pulses the conductive electrode to a positive potential relative to the conductive workpiece support, the one or more workpieces, and the conductive wall portion of the implantation chamber. The control circuitry includes a voltage source that provides an electric field through which the ionized gas molecules accelerate before striking the implantation surfaces of the one or more workpieces.

    摘要翻译: 通过使离子冲击工件注入表面来处理工件注入表面的方法和装置。 植入室(12)限定一个室内部,一个或多个工件可插入其中,并且包括靠近室内部的导电内壁部分(22)。 导电工件支撑件(30)延伸到注入室的内部区域。 导电电极(32)相对于所述导电工件支撑件设置在所述注入室内,以允许工件在支撑体和导电电极之间的区域(34)中放置在工件支撑件上。 将气体分子注入到注入室中,以使气体分子占据一个或多个工件附近的注入室的区域。 气体分子在工件的植入物表面附近被离子化。 控制电路(100)将导电电极相对于导电工件支撑件,一个或多个工件和注入室的导电壁部分脉冲为正电位。 控制电路包括提供电场的电压源,电离气体分子在撞击一个或多个工件的注入表面之前加速。

    Glass cutting wheel
    70.
    发明公开
    Glass cutting wheel 失效
    SchleifscheibefürGlas

    公开(公告)号:EP0693572A3

    公开(公告)日:1997-03-12

    申请号:EP95304972.3

    申请日:1995-07-17

    CPC分类号: C23C14/48 C23C30/005

    摘要: A disposable glass cutter wheel (12) assembly comprising a disc-shaped cutter wheel of nitrogen ion-implanted cobalt-cemented tungsten carbide and a cylindrical axle (18) passing through a centre hole (16) in the cutter wheel (12), the axle (18) also being of nitrogen ion-implanted cobalt-cemented tungsten carbide.

    摘要翻译: 一种一次性玻璃切割轮(12)组件,包括氮离子注入的钴合金碳化钨的圆盘形切割轮和穿过切割轮(12)中的中心孔(16)的圆柱形轴(18), 轴(18)也是氮离子注入的钴合金碳化钨。