摘要:
The invention relates to blades for cutting moving lines of material, especially for cutting lines of paper or cardboard, plastic films or metal foils. Known blades (1, 2) have a blade body (3) with a steel cutting edge (5). According to the invention, foreign ions are inserted between layers in the cutting edge (5) by means of a plasma-assisted process, the penetration depth being between 50 νm and 500 νm, preferably between 100 νm and 200 νm. The doping of foreign ions in the metal lattice produces an improvement in hardness which is optimal for cutting without causing the steel to become too brittle. The inventive blades therefore have a long service life, even when used to cut lines of paper or cardboard, which can be abrasive, and are still economical to produce.
摘要:
There are disclosed a surface hardening method for resins and a surface hardened resin, capable of reforming the surface of a plastics disk substrate at low energy in a short time, and a production device of such a resin. The formation of an ion-implanted layer (11) by implanting equal to or more than 10 17 carbon ions per cm 2 into the surface of a plastic disk substrate (10) at equal to or less than 20 KeV and the formation of a thin film (12) of high hardness on the ion-implanted layer (11) are performed alternately or simultaneously, and the hardening rate is increased further by using a bias device.
摘要翻译:公开了一种树脂和表面硬化树脂的表面硬化方法,能够在短时间内以低能量重塑塑料盘基板的表面,以及这种树脂的制造装置。 通过将等于或大于20KeV的等于或大于10 17碳离子/ cm 2注入到塑料盘基片(10)的表面中来形成离子注入层(11),并且 在离子注入层(11)上形成高硬度的薄膜(12)交替地或同时地进行,并且通过使用偏压装置进一步增加硬化率。
摘要:
A superconducting article including a flexible polycrystalline metal substrate, a layer of an adhesion layer material upon the surface of the flexible polycrystalline metal substrate, a layer of a cubic oxide material upon the adhesion layer material, the first layer of cubic oxide material deposited by ion beam assisted deposition, a layer of a buffer material upon the ion beam assisted deposited cubic oxide material layer, and, a layer of YBCO upon the buffer material layer is provided and has demonstrated Jc's of 1.3 X 10 A/cm , and Ic's of 120 Amperes across a sample 1 cm wide.
摘要:
Method and apparatus for treating a workpiece implantation surface (120) by causing ions to impact the workpiece implantation surface (120). An implantation chamber (12) defines a chamber interior (24) into which one or more workpieces (14) can be inserted. A support (30) positions one or more workpieces (14) within an interior region (34) of the implantation chamber (12) so that implantation surfaces (120) of the workpieces (14) are facing the interior region (34). A dopant material in the form of a gas is injected into the implantation chamber (12) to cause the gas to occupy a region (34) of the implantation chamber (12) in close proximity to the one or more workpieces (14). A plasma of implantation material is created within the interior region (34) of the implantation chamber (12). First and second conductive electrodes (30, 32) positioned within the implantation chamber (12) include conductive surfaces in proximity to the chamber interior (24, 34) occupied by the one or more workpieces (12). A voltage source outside the chamber relatively biases the first and second conductive electrodes (30, 32). A control circuit (100) utilizes the voltage source for repeatedly relatively biasing the first and second conductive electrodes (30, 32) to energize the electrodes (30, 32) with a sequence of pulses (112, N, P) that both ionize the gas molecules injected into the chamber (12) and accelerate the ionized gas molecules toward the implantation surfaces (120) of the one or more workpieces (14).
摘要:
Method and apparatus for treating a workpiece implantation surface by causing ions to impact the workpiece implantation surface. An implantation chamber (12) defines a chamber interior into which one or more workpieces can be inserted and includes a conductive inner wall portion (22) in proximity to the chamber interior. A conductive workpiece support (30) extends into an interior region of the implantation chamber. A conductive electrode (32) is disposed within said implantation chamber relative to said conductive workpiece support to allow workpieces to be placed on the workpiece support in a region (34) between the support and the conductive electrode. Gas molecules are injected into the implantation chamber to cause the gas molecules to occupy a region of the implantation chamber in close proximity to the one or more workpieces. The gas molecules are ionized near an implant surface of the workpieces. Control circuitry (100) pulses the conductive electrode to a positive potential relative to the conductive workpiece support, the one or more workpieces, and the conductive wall portion of the implantation chamber. The control circuitry includes a voltage source that provides an electric field through which the ionized gas molecules accelerate before striking the implantation surfaces of the one or more workpieces.
摘要:
Method of ion bombarding a zinc or zinc alloy coated steel sheet according to which the sheet is subjected to, at least on one of its coated surfaces, vacuum ion bombarding by ions of a gas or a gaseous mixture formed from at least one neutral gas and/or at least one reactive gas having an energy and a density sufficient to alter the surface state of said sheet by ionic erosion and/or thermo-ionic effect and/or by chemical effect, thereby preparing the sheet for painting. The vacuum ion bombarding pretreatment improves the appearance of the sheet after painting.
摘要:
A disposable glass cutter wheel (12) assembly comprising a disc-shaped cutter wheel of nitrogen ion-implanted cobalt-cemented tungsten carbide and a cylindrical axle (18) passing through a centre hole (16) in the cutter wheel (12), the axle (18) also being of nitrogen ion-implanted cobalt-cemented tungsten carbide.