MANUFACTURE OF LIQUID METAL ION SOURCE
    76.
    发明授权
    MANUFACTURE OF LIQUID METAL ION SOURCE 失效
    液体金属离子源的制造

    公开(公告)号:EP0217951B1

    公开(公告)日:1992-11-04

    申请号:EP86903721.8

    申请日:1986-03-27

    CPC classification number: H01J27/26 H01J27/022

    Abstract: A process for preparing a liquid metal ion source (10) structure, preferably made from graphite, so that it may be wetted with boron-containing alloys. The process first involves the coating the source structure with elemental boron (74). The boron is preferably furnished as boron powder in a liquid carrier (24) which may then be coated onto the surface of the source structure substrate (22). The coated structure is heated for a short time to a temperature whereat the source structure substrate and boron form a liquid layer at the surface of the substrate to "boronize" the substrate (12). The final wetted source structure is achieved by mixing a small amount of free boron powder with the alloy (72) to be ion evaporated (also in powdered form), coating the previously boronized source structure (22) with this mixture and heating the contacted boron-augmented source alloy and source structure (22) to a temperature of at least the solidus temperature of the source alloy, at which point the source structure (22) is wetted. Once wetted, a flow of source alloy toward the emitter tip (22) of the source structure can be established during operation of the ion source. Prior boronizing may be omitted for some boron carbide source structures.

    Ion source method and apparatus
    77.
    发明公开
    Ion source method and apparatus 失效
    Herstellungsverfahren und VorrichtungfürIonenquelle。

    公开(公告)号:EP0399374A1

    公开(公告)日:1990-11-28

    申请号:EP90109369.0

    申请日:1990-05-17

    CPC classification number: H01J27/26 H01J37/08

    Abstract: Disclosure is given for a ion source including an ion generating element (11) for providing a reservoir of flowing liquid source material, accelerating elements (12) for providing an electric field around the ion generating element, and shielding elements (36). The shielding element (36) is con­structed from a material including atoms which, if back­sputtered onto the ion generating element (11), do not sub­stantially degrade ion source performance.

    Abstract translation: 公开了一种离子源,包括用于提供流动液体源材料的储存器的离子产生元件(11),用于在离子产生元件周围提供电场的加速元件(12)和屏蔽元件(36)。 屏蔽元件(36)由包括原子的材料构成,如果反向溅射到离子产生元件(11)上,基本上不会降低离子源性能。

    LIQUID METAL ION SOURCE AND ALLOY
    78.
    发明公开
    LIQUID METAL ION SOURCE AND ALLOY 失效
    液态金属离子源及合金。

    公开(公告)号:EP0263849A1

    公开(公告)日:1988-04-20

    申请号:EP87901979.0

    申请日:1987-03-09

    CPC classification number: H01J27/26

    Abstract: Source d'ions et alliage sous forme de métal liquide, où l'espèce de matériaux devant être émis par la source d'ions est contenue dans un alliage à vaporisation congruente. Dans une réalisation la source d'ions sous forme de métal liquide sert de source d'arsenic, et dans un alliage source l'arsenic est associé à du palladium, de préférence dans un alliage liquide dont la plage de compositions varie depuis environ 24 à environ 33 pourcent atomique d'arsenic. Un alliage de ce genre peut être préparé facilement par une technique de synthèse par combustion. Les sources d'ions sous forme de métal liquide qui sont ainsi préparées fournissent des ions d'arsenic destinés à l'implantation, possèdent une grande longivité et présentent une stabilité de fonctionnement élevée.

    Liquid metal ion source
    80.
    发明公开
    Liquid metal ion source 失效
    液态金属离子源。

    公开(公告)号:EP0202685A2

    公开(公告)日:1986-11-26

    申请号:EP86107046.4

    申请日:1986-05-23

    Applicant: HITACHI, LTD.

    CPC classification number: H01J27/26 H01J37/08

    Abstract: A liquid metal ion source comprises an ion emitter tip (1), ion source material holder means (2) holding ion source material (5) for supplying liquid metal ion source material to said ion emitter tip (1 ion extracting means (4) for extracting ions from said ion emitter tip (1), when the voltage is applied between the ion extracting means (4) and the ion emitter tip (1), and pulsing means for pulsing the relative voltage applied between the ion extracting means (4) and the ion emitter tip (1). A DC voltage corresponding to the threshold voltage (V th ) for ion beam extraction is applied between the ion emitter tip (1) and the extracting electrode (4), what permits to extract an ion beam having a high current density by superposing a pulsed voltage on the DC voltage.

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