Abstract:
A focused ion beam device is described. The device includes an ion beam column including an enclosure for housing an emitter with an emitter area for generating ions, a first gas inlet adapted to introduce a first gas to the emitter area, a second gas inlet adapted to introduce a second gas different from the first gas to the emitter area, and a switching unit adapted to switch between introducing the first gas and introducing the second gas.
Abstract:
A focused ion beam device (100) is described. The device includes an ion beam column (16) including an enclosure for housing (14) an emitter with an emitter area (12) for generating ions, a first gas inlet (110) adapted to introduce a first gas to the emitter area, a second gas inlet (112) adapted to introduce a second gas different from the first gas to the emitter area, and a switching unit adapted to switch between introducing the first gas and introducing the second gas.
Abstract:
A liquid metal ion source and alloy, wherein the species to be emitted from the ion source is contained in a congruently vaporizing alloy. In one embodiment, the liquid metal ion source acts as a source of arsenic, and in a source alloy the arsenic is combined with palladium, preferably in a liquid alloy having a range of compositions from about 24 to about 33 atomic percent arsenic. Such an alloy may be readily prepared by a combustion synthesis technique. Liquid metal ion sources thus prepared produce arsenic ions for implantation, have long lifetimes, and are highly stable in operation.
Abstract:
A process for preparing a liquid metal ion source (10) structure, preferably made from graphite, so that it may be wetted with boron-containing alloys. The process first involves the coating the source structure with elemental boron (74). The boron is preferably furnished as boron powder in a liquid carrier (24) which may then be coated onto the surface of the source structure substrate (22). The coated structure is heated for a short time to a temperature whereat the source structure substrate and boron form a liquid layer at the surface of the substrate to "boronize" the substrate (12). The final wetted source structure is achieved by mixing a small amount of free boron powder with the alloy (72) to be ion evaporated (also in powdered form), coating the previously boronized source structure (22) with this mixture and heating the contacted boron-augmented source alloy and source structure (22) to a temperature of at least the solidus temperature of the source alloy, at which point the source structure (22) is wetted. Once wetted, a flow of source alloy toward the emitter tip (22) of the source structure can be established during operation of the ion source. Prior boronizing may be omitted for some boron carbide source structures.
Abstract:
Disclosure is given for a ion source including an ion generating element (11) for providing a reservoir of flowing liquid source material, accelerating elements (12) for providing an electric field around the ion generating element, and shielding elements (36). The shielding element (36) is constructed from a material including atoms which, if backsputtered onto the ion generating element (11), do not substantially degrade ion source performance.
Abstract:
Source d'ions et alliage sous forme de métal liquide, où l'espèce de matériaux devant être émis par la source d'ions est contenue dans un alliage à vaporisation congruente. Dans une réalisation la source d'ions sous forme de métal liquide sert de source d'arsenic, et dans un alliage source l'arsenic est associé à du palladium, de préférence dans un alliage liquide dont la plage de compositions varie depuis environ 24 à environ 33 pourcent atomique d'arsenic. Un alliage de ce genre peut être préparé facilement par une technique de synthèse par combustion. Les sources d'ions sous forme de métal liquide qui sont ainsi préparées fournissent des ions d'arsenic destinés à l'implantation, possèdent une grande longivité et présentent une stabilité de fonctionnement élevée.
Abstract:
A liquid metal ion source comprises an ion emitter tip (1), ion source material holder means (2) holding ion source material (5) for supplying liquid metal ion source material to said ion emitter tip (1 ion extracting means (4) for extracting ions from said ion emitter tip (1), when the voltage is applied between the ion extracting means (4) and the ion emitter tip (1), and pulsing means for pulsing the relative voltage applied between the ion extracting means (4) and the ion emitter tip (1). A DC voltage corresponding to the threshold voltage (V th ) for ion beam extraction is applied between the ion emitter tip (1) and the extracting electrode (4), what permits to extract an ion beam having a high current density by superposing a pulsed voltage on the DC voltage.