摘要:
Bei einer Ionenquelle mit einer Mehrzahl von einem Transport wenigstens eines Emissionsstoffs dienenden, insbesondere nadelförmigen Elementen (2), welche in einer gemeinsamen Halterung (7) angeordnet sind und an welche eine Spannung anlegbar ist, wobei in Abstand von Austrittsenden der Elemente (2) wenigstens eine Gegenelektrode (4) zur Ausbildung eines elektrischen Felds zwischen den gemeinsam mit der Halterung (7) eine Elektrode bildenden Elementen (2) und der Gegenelektrode (4) für eine Beschleunigung der durch die Elemente (2) emittierten Ionen des Emissionsstoffs vorgesehen ist, ist vorgesehen, dass die Halterung (7) eine die Mehrzahl von nadelförmigen Elementen (2) umgebende, insbesondere ringförmige Erhebung (3) aufweist, an welche die an die Elemente (2) angelegte Spannung angelegt ist, und dass die Gegenelektrode (4) die Halterung (7) sowie die nadelförmigen Elemente (2) in Abstand umgibt und entsprechend der Positionierung derselben mit einer Durchtrittsöffnung (5) ausgebildet ist, welche zumindest der Abmessung (R) der Erhebung (3) der Halterung (7) entspricht. Derart wird von der Mehrzahl von Elementen (2) ein gleichmäßiges bzw. gleichförmiges elektrisches Feld wahrgenommen, um die Ausbringung eines gerichteten Strahls (11) des Emissionsstoffs zu unterstützen.
摘要:
The present invention refers to a system, comprising a scanning electron microscope capable of providing an electron beam and a gas field ion source (120) capable of interacting with a gas (182) to generate an ion beam (192). The scanning electron microscope and the gas field ion microscope (100) are positioned so that, during use, both the electron beam and the ion beam can be used to investigate a sample (180). A system according to the present invention also comprises a focused ion beam instrument. The figure published with the abstract only shows the gas field ion microscope (100).
摘要:
Ion sources, systems and methods are disclosed. In some embodiments, the ion sources, systems and methods can exhibit relatively little undesired vibration and/or can sufficiently dampen undesired vibration. This can enhance performance (e.g., increase reliability, stability and the like).
摘要:
A method of operating a focused ion beam device for emitting during operation a focused ion beam including ions of a gas generated at a first partial pressure, comprising cleaning an emitter tip positioned in an emitter tip region of the focused ion beam device, the cleaning comprises introducing the gas into the emitter tip region such that the gas has a second partial pressure of at least two times the first pressure. Further, a focused ion beam device is provided, comprising a gas field emitter tip (13) in an emitter tip region emitting an ion beam including ions of a gas, a gas inlet for supplying a gas with different pressures (110), a gas outlet (120), a pressure measurement device for measuring the pressure in the emitter tip region and a control unit (130) for controlling switching between an operation mode and a cleaning mode, further controlling the pressures in the emitter tip region and being connected to the pressure measurement device.
摘要:
A liquid metal ion source (10) and alloy for the simultaneous ion evaporation of arsenic and boron, arsenic and phosphorus, or arsenic, boron and phosphorus. The ionic species to be evaporated are contained in palladium-arsenic-boron and palladium-arsenic-boron-phosphorus alloys. The ion source (10), including an emitter means such as a needle emitter (12) and a source means such as U-shaped heater element (14), is preferably constructed of rhemium and tungsten, both of which are readily fabricated. The ion sources (10) emit continuous beams of ions having sufficiently high currents of the desired species to be useful in ion implantation of semiconductor wafers for preparing integrated circuit devices. The sources are stable in operation, experience little corrosion during operation, and have long operating lifetimes.