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125 条记录 (耗时 0.023 秒)

    MAGNETORESISTIVE ELEMENT AND NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE USING SAME
    74.
    发明公开
    MAGNETORESISTIVE ELEMENT AND NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE USING SAME 审中-公开
    磁阻元件和非易失性半导体存储装置

    公开(公告)号：EP2479787A1

    公开(公告)日：2012-07-25

    申请号：EP10816986.3

    申请日：2010-08-04

    申请人： Fuji Electric Co., Ltd.

    发明人： YAMADA, Michiya ,  OGIMOTO, Yasushi

    IPC分类号： H01L21/8246 ,  G11C11/15 ,  H01L27/105 ,  H01L43/08

    CPC分类号： H01L43/12 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/224 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    摘要： The invention provides a magnetoresistance element with a configuration such that a stable switching action is possible with a current flowing in response to the application of a unipolar electrical pulse, and a non-volatile semiconductor storage device using the magnetoresistance element.
    A magnetoresistance element 1-1 includes a magnetic tunnel junction portion 13 configured by sequentially stacking a perpendicularly magnetized first magnetic body 22, an insulation layer 21, and a perpendicularly magnetized second magnetic body 200. The second magnetic body 200 has a configuration wherein a ferromagnetic layer and a rare earth-transition metal alloy layer are stacked sequentially from the insulation layer 21 side interface. A heat assist layer 28-1 that heats the second magnetic body 200 with a heat generated based on a current flowing through the magnetic tunnel junction portion 13 is further provided, and the magnetization direction of the second magnetic body 200 is reversed by the heating of the second magnetic body 200. A non-volatile semiconductor storage device 10-1 includes the magnetoresistance element 1-1, a switching element connected in series to the magnetoresistance element 1-1, information rewriting means that carries out a write and erase by causing a write current to flow through the magnetoresistance element 1-1, and reading means that reads information stored from the amount of current flowing through the magnetoresistance element 1-1.

    MAGNETORESISTIVE ELEMENT AND MEMORY DEVICE USING SAME
    75.
    发明公开
    MAGNETORESISTIVE ELEMENT AND MEMORY DEVICE USING SAME 有权
    磁力元素在SPEICHERANORDNUNG DAMIT

    公开(公告)号：EP2375464A1

    公开(公告)日：2011-10-12

    申请号：EP09834596.0

    申请日：2009-10-02

    申请人： Fuji Electric Co., Ltd.

    发明人： YAMADA, Michiya ,  OGIMOTO, Yasushi

    IPC分类号： H01L43/08 ,  H01F10/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/126 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3286 ,  H01L27/224 ,  H01L43/10 ,  H01L43/12

    摘要： The present invention provides a magnetic memory element having a memory cell of size 4F 2 which realizes crosspoint-type memory. In a magnetic memory element 100, a first magnetic layer 22, a third magnetic layer (spin polarization enhancement layer) 27, an intermediate layer 21, a fourth magnetic layer (spin polarization enhancement layer) 26, and a second magnetic layer 20 are stacked in order. The intermediate layer 21 is made of an insulating material or a nonmagnetic material. The second magnetic layer 20 comprises a ternary alloy of gadolinium, iron and cobalt, a binary alloy of gadolinium and cobalt, or a binary alloy of terbium and cobalt. Alternatively, the first magnetic layer 22 comprises a ternary alloy of terbium, iron and cobalt, or a binary alloy of terbium and cobalt.

    摘要翻译： 本发明提供一种具有大小为4F 2的存储单元的磁存储元件，其实现交叉点型存储器。 在磁存储元件100中，堆叠第一磁性层22，第三磁性层（自旋极化增强层）27，中间层21，第四磁性层（自旋极化增强层）26和第二磁性层20 为了。 中间层21由绝缘材料或非磁性材料制成。 第二磁性层20包括钆，铁和钴的三元合金，钆和钴的二元合金，或铽和钴的二元合金。 或者，第一磁性层22包括铽，铁和钴的三元合金，或铽和钴的二元合金。

    MAGNETIC MEMORY ELEMENT AND NONVOLATILE STORAGE DEVICE
    76.
    发明公开
    MAGNETIC MEMORY ELEMENT AND NONVOLATILE STORAGE DEVICE 有权
    MAGNETISCHES SPEICHERELEMENT UND NICHTFLÜCHTIGESPEICHERVORRICHTUNG DAMIT

    公开(公告)号：EP2355142A1

    公开(公告)日：2011-08-10

    申请号：EP09830245.8

    申请日：2009-08-25

    申请人： Fuji Electric Co., Ltd

    发明人： OGIMOTO, Yasushi

    IPC分类号： H01L21/8246 ,  G11C11/15 ,  H01L27/105 ,  H01L43/08

    CPC分类号： H01L27/224 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L43/08

    摘要： The present invention provides a magnetic memory element (8) that has a spin valve structure formed using a free layer (5), a non-magnetic layer (4), and a pinned layer (3). The free layer (5) has a three-layer structure having a first magnetic layer (51), an intermediate layer (52), and a second magnetic layer (53) arranged in this order viewed from the non-magnetic layer (4). The first magnetic layer (51) is made of a ferromagnetic material. The intermediate layer (52) is made of a non-magnetic material. The second magnetic layer (53) is made of an N-type ferromagnetic material having a magnetic compensation point in the temperature range where a memory storage operation can be available. The magnetization direction of the first magnetic layer and the magnetization direction of the second magnetic layer are parallel to each other at the temperature lower than the magnetic compensation point T comp .

    摘要翻译： 本发明提供一种具有使用自由层（5），非磁性层（4）和钉扎层（3）形成的自旋阀结构的磁存储元件（8）。 自由层（5）具有从非磁性层（4）观察的依次排列的第一磁性层（51），中间层（52）和第二磁性层（53）的三层结构， 。 第一磁性层（51）由铁磁材料制成。 中间层（52）由非磁性材料制成。 第二磁性层（53）由在存储器存储操作可用的温度范围内具有磁补偿点的N型铁磁材料制成。 第一磁性层的磁化方向和第二磁性层的磁化方向在低于磁补偿点T comp的温度下彼此平行。

    SPIN DEPENDENT TUNNELING MEMORY
    80.
    发明公开
    SPIN DEPENDENT TUNNELING MEMORY 审中-公开
    SPINABHÄNGIGERTUNNELSPEICHER

    公开(公告)号：EP1245029A4

    公开(公告)日：2007-09-19

    申请号：EP00978395

    申请日：2000-11-06

    申请人： NVE CORP

    发明人： POHM ARTHUR V

    IPC分类号： G11C7/00 ,  G11C11/15 ,  G11C11/16 ,  G11C14/00 ,  H01F10/32 ,  H01L27/22

    CPC分类号： G11C14/0081 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3254 ,  H01L27/224 ,  H01L27/228

    摘要： A digital data memory having a bit structure (17) in a memory cell based on a dielectric intermediate separating material (14) with two major surfaces having thereon an anisotropic ferromagnetic thin-film (12, 13; 12', 13') of differing thicknesses. These bit structures (17) are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series, parallel selectively connected members (11',17,20; 74,70,17,90,78; 103,104,17,100,102) of storage line structures. A corresponding conductive word line structure (22) adjacent corresponding ones of these memory cells is used for selecting or operating them, or both, in data storage and retrieval operations.