摘要:
The present invention relates to aqueous compositions used to remove post etch organic and inorganic residue as well polymeric residues and contaminants from semiconductor substrates. The compositions are comprised of a water soluble organic solvent, a sulfonic acid and water.
摘要:
There are here disclosed a method for removing a titanium-based film from a honeycomb-molding die having on the surface of a base material coated with the titanium-based film, and a method for removing an oxide of titanium from a honeycomb-molding die having the oxide of titanium adhered/deposited on the surface of a base material. In each method, a removing solution comprising a mixture of an acid and hydrogen peroxide is used. According to the methods for removing the titanium-based film and the oxide of titanium, a large amount of the titanium-based film as well as the oxide of titanium adhered/deposited on the base material of a honeycomb-molding die can be removed by use of a small amount of the removing solution without corroding the base material of honeycomb-molding die while re-deposition of dissolved titanium ions on the base material is prevented.
摘要:
Zirconium sponge can be chemically depassivated by treatment with hydrofluoric acid to improve the ability of molten magnesium/magnesium alloy to dissolve zirconium from the treated zirconium sponge and to form a melt containing substantially evenly distributed particles of zirconium.
摘要:
A method for the removing of plasma etch residues on a substrate comprising the steps of: (i) contacting the substrate with a cleaning composition, and (ii) contacting the substrate with ozonated water. The preferred cleaning composition has a pH from 2 to 6 and comprises: (A) water; (B) at least one selected hydroxylammonium compound; and (C) at least one basic compound; and optionally (D) a chelating stabilizer; and optionally (E) a surfactant.
摘要:
A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compounds adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of the metal and the dielectric material. A composition for chemical mechanical polishing is improved by including an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material. A selectively oxidizing and reducing compound is applied to produce a differential removal of the metal and the dielectric material. The pH of the slurry and the selectively oxidizing and reducing compound is adjusted to provide the differential removal of the metal and the dielectric material. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material, and an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid.
摘要:
In a method (10) for cleaning an engine component, an engine component is provided (12) and is immersed (14) in an acid solution selected from phosphoric acid, citric acid and acetic acid. A cleaning composition for an engine component comprises an agitated acid solution selected from phosphoric acid, citric acid and acetic acid.
摘要:
A method and apparatus for chemical delivery through the brush (240) used in semiconductor substrate cleaning processes. The chemical solutions (210, 220) are delivered to the core (230) of a brush (240) where the solution is absorbed by the brush (240) and then applied by the brush (240) onto the substrate. This delivery system applies the chemical solutions (210, 220) uniformly to the semiconductor substrate, reduces the volumes of chemical solutions (210, 220) used in a scrubbing process, and helps maintain control of the pH profile of a subtrate. This system is described and illustrated in the manner it is used in conjunction with a scrubber that scrubs both sides of a semiconductor substrate.
摘要:
The invention relates to an aqueous stripper free of wetting agents and emulsifiers, intended for use with special steels. Said stripper, on a basis of sulfuric acid or phosphoric acid and hydrofluoric acid, contains (in each case in relation to 100 percent by weight of substance): between 1.5 and 16 weight percent sulfuric acid or between 2.0 and 30 weight percent phosphoric acid, as well as between 0.5 and 14 weight percent hydrofluoric acid and between 0.5 and 15.5 weight percent acid-soluble aromatic nitro compounds. No iron(III) compounds are added to said stripper. Only in the initial phase an oxidizing agent which oxidizes iron(II) to iron(III) may be added. As acid-soluble aromatic nitro compound m-nitrobenzol sulfonate and/or 3-nitrophthalate are especially advantageous. The stripper provided for by the invention can be used in a stripping bath and, if between 2.5 and 5.5 weight percent magnesium and/or magnesium compound (calculated as Mg) are added, can also be applied by spraying or with a brush.
摘要:
A cleaning agent comprising 0.1-4 wt.% of hydrofluoric acid, 50-1,500 ppm of a surfactant represented by the following general formula (1): RfCOONH4 or 50-100,000 ppm of a surfactant represented by the following general formula (2): Rf'O(CH2CH2O)nR or (3): Rf'(CH2CH2O)nR, and the balance consisting of water; and a method of cleaning the surface of a silicon wafer, etc., by using the same. In formula (1) Rf represents a C5-C9 fluorohydrocarbon group, in formula (2) or (3) Rf' represents a C5-C15 fluorohydrocarbon group; R represents hydrogen or C1-C4 alkyl; and n represents a number of 5 to 20.
摘要:
A cleaning process and water-based cleaning compositions effective for the removal of radionuclides, polychlorinated biphenyls, pesticides, herbicides, and heavy metals from surfaces of all types, more especially porous surfaces, surfaces that contain irregularities and microscopic voids into which contaminants may migrate and lodge thereby creating a substrate below the surface that must also be cleaned, and particulate surfaces. The cleaning blends and processes remove contaminants from porous and irregular surfaces to such a depth below the surface and into the substrate, and to such an extent, that the cleaned surface satisfies current regulations promulgated by the EPA and NRC relating to standards for decontamination. The process also allows sealing of cleaned surfaces, if desired, with an impermeable coating of a synthetic polymeric composition in order to retard subsequent migration of any residual contaminants to the surface.