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    DECORATIVE MATERIAL
    83.
    发明公开
    DECORATIVE MATERIAL 审中-公开

    公开(公告)号：EP3536497A1

    公开(公告)日：2019-09-11

    申请号：EP17868225.8

    申请日：2017-11-02

    Applicant: Toppan Printing Co., Ltd.

    Inventor： HIGASHIKAWA Eiichi

    IPC: B32B27/00 ,  B32B27/18 ,  E04F13/07 ,  E04F13/08

    Abstract: Provided is a decorative material having excellent designability and scratch resistance. Of first and second gloss-adjusting layers (5, 6), one with lower gloss contains a matting agent having an average particle diameter of 6.0 µm or more and 15.0 µm or less. That is, the average particle diameter of the matting agent in the gloss-adjusting layer with lower gloss, i.e., the gloss-adjusting layer whose scratch resistance is likely to be low, is set within an optimal range in which the gloss-adjusting layer has excellent scratch resistance and designability. In this manner, the scratch resistance and designability of the entire decorative material (1) can be improved. Thus, a decorative material (1) having excellent scratch resistance and designability can be provided.

    ORGANIC THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME AND IMAGE DISPLAY DEVICE
    87.
    发明公开
    ORGANIC THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME AND IMAGE DISPLAY DEVICE 审中-公开

    公开(公告)号：EP3506337A1

    公开(公告)日：2019-07-03

    申请号：EP17843585.5

    申请日：2017-08-22

    Applicant: Toppan Printing Co., Ltd.

    Inventor： IKEDA Noriaki ,  NISHIZAWA Makoto

    IPC: H01L21/336 ,  G09F9/30 ,  H01L21/28 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786 ,  H01L51/05

    Abstract: Provided are an organic thin-film transistor produced by a printing method with high yield without causing a short circuit failure especially between the gate electrode and the capacitor electrode, ensuring a sufficient capacitor electrode area, and an image display device. The organic thin-film transistor includes: on an insulating substrate, at least a gate electrode; a capacitor electrode; an insulating layer of at least two or more layers; and a source electrode, a drain electrode, and a semiconductor layer containing an organic semiconductor material, which are formed on the insulating layer, wherein: a first insulating layer is formed to cover at least the capacitor electrode; the gate electrode is formed on the first insulating layer; and a second insulating layer is formed to cover the gate electrode.

    PUNCTURE IMPLEMENT FOR MICRONEEDLE
    88.
    发明公开
    PUNCTURE IMPLEMENT FOR MICRONEEDLE 审中-公开

    公开(公告)号：EP3485934A1

    公开(公告)日：2019-05-22

    申请号：EP17827740.6

    申请日：2017-07-14

    Applicant: Toppan Printing Co., Ltd.

    Inventor： SUMIDA, Tomoya

    IPC: A61M37/00

    Abstract: A microneedle puncture instrument includes a pinch section (11) including a first pinch element (11a) and a second pinch element (11b) arrayed in an array direction (Da) and configured to individually pinch the skin in a pinch direction (Dh), which intersects with the array direction (Da), the first pinch element (11a) and the second pinch element (11b) being connected to each other with a distance (Dist) therebetween maintained within a predetermined range; and a puncture section (12) configured to puncture the skin while pinching the skin in the pinch direction (Dh) at a position between the first pinch element (11a) and the second pinch element (11b) in the array direction (Da), the puncture section (12) including a microneedle (12a) for puncturing the skin and a support portion (12b) that supports the microneedle (12a).

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