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    Metal organic chemical vapor deposition equipment
    87.
    发明公开
    Metal organic chemical vapor deposition equipment 有权
    Metallorganische Gasphasenabscheidungsanlage

    公开(公告)号：EP1882757A1

    公开(公告)日：2008-01-30

    申请号：EP07011616.5

    申请日：2007-06-13

    申请人： Sumitomo Electric Industries, Ltd.

    发明人： Ueno, Masaki ,  Ueda, Toshio ,  Takasuka, Eiryo

    IPC分类号： C23C16/455 ,  C30B25/14

    CPC分类号： C23C16/45585 ,  C23C16/303 ,  C23C16/45504 ,  C30B25/165 ,  C30B35/00

    摘要： Metal organic chemical vapor deposition equipment (1) is metal organic chemical vapor deposition equipment for forming a film on a substrate (20) by using a reactant gas (G), and includes a susceptor (5) heating the substrate (20) and having a holding surface for holding the substrate (20), and a flow channel (11) for introducing the reactant gas (G) to the substrate (20). The susceptor (5) is rotatable with the holding surface kept facing an inner portion of the flow channel (11), and a height of the flow channel (11) along a flow direction of the reactant gas (G) is kept constant from a position (A3) to a position (S), and is monotonically decreased from the position (S) to the downstream side. It is thereby possible to improve film formation efficiency while allowing the formed film to have a uniform thickness.

    摘要翻译： 金属有机化学气相沉积设备（1）是用于通过使用反应气体（G）在基板（20）上形成膜的金属有机化学气相沉积设备，并且包括基座（5），加热基板（20）并具有 用于保持基板（20）的保持表面和用于将反应气体（G）引入基板（20）的流动通道（11）。 基座（5）可旋转，保持面保持与流路（11）的内部相对，沿着反应气体（G）的流动方向的流动通道（11）的高度保持恒定， 位置（A3）到位置（S），并且从位置（S）到下游侧单调减小。 从而可以提高成膜效率，同时允许成形膜具有均匀的厚度。

    ALKYL PUSH FLOW FOR VERTICAL FLOW ROTATING DISK REACTORS
    88.
    发明公开
    ALKYL PUSH FLOW FOR VERTICAL FLOW ROTATING DISK REACTORS 有权
    垂直流HUB REACTORS和治疗方法，这些方法

    公开(公告)号：EP1660697A1

    公开(公告)日：2006-05-31

    申请号：EP03818356.2

    申请日：2003-08-20

    申请人： VEECO INSTRUMENTS INC.

    发明人： MURPHY, Michael ,  HOFFMAN, Richard ,  CRUEL, Jonathan ,  KADINSKI, Lev ,  RAMER, Jeffrey, C. ,  ARMOUR, Eric

    IPC分类号： C23C16/00 ,  C23C16/06 ,  C23C16/455 ,  C30B25/02

    CPC分类号： C30B25/14 ,  C23C16/455 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/52 ,  C30B25/08 ,  C30B25/12 ,  C30B25/165

    摘要： In a rotating disk reactor for growing epitaxial layers on substrate or other CVD reactor system, gas directed toward the substrates at gas inlets at different radial distances from the axis of rotation of the disk has both substantially the same gas flow rate/velocity and substantially the same gas density at each inlet. The gas directed toward portions of the disk remote from the axis may include a higher concentration of a reactant gas than the gas directed toward portions of the disk close to the axis, so that portions of the substrate surfaces at different distances from the axis receive substantially the same amount of reactant gas per unit area, and a combination of carrier gases with different relative molecular weights at different radial distances from the axis of rotation are employed to substantially make equal the gas density in each region of the reactor. The system may be applied with a combination or carrier gases at multiple gas inlets, a combination of carrier and reactant gases at multiple inlets, and may be used with an arbitrarily large number of gases, when at least two gases of different molecular weights are provided. A linear flow pattern is achieved within the reactor, avoiding laminar recirculation areas, and permitting uniform deposition and growth of epitaxial layers on the substrate.

    Method and apparatus for gas phase synthesis
    89.
    发明公开
    Method and apparatus for gas phase synthesis 失效
    气相合成方法与装置

    公开(公告)号：EP0484879A3

    公开(公告)日：1993-03-31

    申请号：EP91118835.7

    申请日：1991-11-05

    申请人： NIHON SHINKU GIJUTSU KABUSHIKI KAISHA

    发明人： Hayashi, Yasuaki c/o Nihon Shinku Gijutsu K. K. ,  Hibino, Yukinobu c/o Nihon Shinku Gijutsu K. K.

    IPC分类号： G01N21/21

    CPC分类号： C30B25/02 ,  C30B25/16 ,  C30B25/165 ,  G01N21/211

    摘要： A method of gas phase synthesis comprises the steps of measuring, by ellipsometry, optical properties of a surface of a sample (m) on which a film is formed during formation of the film, and of evaluating a density of nucleation from changes in ellipsometric parameter angles during formation of the film. An apparatus for gas phase synthesis comprises a synthesizing chamber (2), a light source means (15) which is disposed outside the synthesizing chamber (2) for radiating polarized light into the synthesizing chamber (2), a light-inlet window (14) mounted on the synthesizing chamber (2) for introducing thereinto the light radiated from the light source means (15), a light-outlet window (17) mounted on the synthesizing chamber (2) for leading the light introduced from the light-inlet window (14) and reflected from a substrate (m) on which a film is being formed out of the synthesizing chamber (2), a light-receiving means (18) for receiving the light reflected from the substrate (m) and passed through the light-outlet window (17), and a data processing system (19) for receiving an output signal from the light-receiving means (18) for measuring and analyzing a density of nucleation.

    Method and apparatus for epitaxially growing chemical-compound crystal
    90.
    发明公开
    Method and apparatus for epitaxially growing chemical-compound crystal 失效
    方法和装置用于化学化合物的晶体的外延生长。

    公开(公告)号：EP0431415A2

    公开(公告)日：1991-06-12

    申请号：EP90122371.9

    申请日：1990-11-23

    申请人： RESEARCH DEVELOPMENT CORPORATION OF JAPAN ,  Manada, Nobuaki ,  Kurabayashi, Toru ,  Nishizawa, Jun-ichi

    发明人： Manada, Nobuaki ,  Ito, Junji ,  Kurabayashi, Toru ,  Nishizawa, Jun-ichi

    IPC分类号： C30B25/02 ,  C30B25/10

    CPC分类号： C23C16/45561 ,  C30B25/14 ,  C30B25/165

    摘要： In a method of and an apparatus for epitaxially growing a chemical-compound crystal, a plurality of raw-material gasses are alternately introduced into a closed chamber of a crystal growing device to grow the crystal placed within the closed chamber. At growing of the crystal, a light from a light source is emitted to a crystal growing film of the crystal. Intensity of a light reflected from the crystal growing film and received by a photo detector is measured. Charge amounts of the respective raw-material gasses are controlled by a control system on the basis of a change in the reflected-light intensity, thereby controlling a growing rate of the growing film.

    摘要翻译： 在用于在化学化合物的晶体外延生长的方法和装置，原料气体的多元性被交替地引入晶体生长装置生长的封闭腔室中放置在晶体的一个封闭的室中。 在晶体的生长，从光源的光被发射到晶体生长电影晶体。 从晶体生长膜反射并由光检测器接收的光的强度被测量。 所述respectivement原料气体的电荷量是由一控制系统中的反射光强度的变化的基础上被控制，从而控制生长电影的生长速率。