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公开(公告)号：EP2396449B1
公开(公告)日：2015-08-05
申请号：EP10740845.2
申请日：2010-02-12
发明人： REYNOLDS, Guy James , MARTIN, Conor Nicholas , GLOWACKI, Piotr , WINTREBERT EP FOUQUET, Marie-Pierre Francoise , BARIK, Satyanarayan , CHEN, Patrick Po-Tsang
IPC分类号： C23C16/30 , C23C16/452 , C23C16/455 , H01J37/32 , C30B29/40 , H01L21/02
CPC分类号： H01J37/32449 , C23C16/303 , C23C16/452 , C23C16/45523 , C30B25/105 , C30B25/165 , C30B29/403 , H01J37/32357 , H01J37/32422 , H01J37/3244 , H01J37/32633 , H01L21/0237 , H01L21/02521 , H01L21/0262 , Y10T137/8593
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公开(公告)号：EP2758996A1
公开(公告)日：2014-07-30
申请号：EP12832908.3
申请日：2012-09-21
发明人： BARIK, Satyanarayan
IPC分类号： H01L31/042 , H01L31/06 , H01L31/0735
CPC分类号： H01L31/035236 , H01L31/03048 , H01L31/0735 , Y02E10/544
摘要： An improved multiple quantum well solar cell can be achieved by ensuring the bandgap of each quantum well thin layer is not uniform compared with other such layers. Gradation of the bandgap by varying the content of at least two group II to VI elements, and/or varying the thickness of consecutive quantum well layers, within consecutively formed quantum wells provides for an increase in absorption across a greater range of the available solar spectrum.
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公开(公告)号：EP4025720A1
公开(公告)日：2022-07-13
申请号：EP20859839.1
申请日：2020-09-04
IPC分类号： C23C16/18 , C23C16/34 , C23C16/452 , C23C16/458 , C23C16/455
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4.发明公开APPARATUS AND METHOD FOR THE REDUCTION OF IMPURITIES IN FILMS 审中-公开VORRICHTUNG UND VERFAHREN ZUR REDUZIERUNG VON VERUNREINIGUNGEN在FILMEN
公开(公告)号：EP3095305A1
公开(公告)日：2016-11-23
申请号：EP15737284.8
申请日：2015-01-15
CPC分类号： C23C16/50 , C23C16/34 , C23C16/509 , H01J37/321 , H01J37/32357 , H01J37/32477 , H01J37/32486 , H01J2237/3321
摘要： A plasma generator is described which employs a partial PBN liner not only to minimise the loss of energetic gas species during film formation but also to reduce boron impurity levels introduced into the growing film relative to the use of a complete PBN liner. The use of such a plasma generator in a film forming apparatus and method of forming a film is also described.
摘要翻译： 描述了一种使用部分PBN衬垫的等离子体发生器，其不仅在成膜期间最小化能量气体种类的损失，而且还减少了相对于使用完整的PBN衬垫引入到生长膜中的硼杂质水平。 还描述了在成膜装置中使用这种等离子体发生器和形成膜的方法。
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公开(公告)号：EP2872668A1
公开(公告)日：2015-05-20
申请号：EP13816517.0
申请日：2013-07-15
CPC分类号： C23C16/455 , C01B21/0632 , C23C16/303 , C23C16/452 , C23C16/45536 , C23C16/45551 , C23C16/513 , H01B1/06 , H01J37/32357 , H01J37/3244 , H01L21/0254 , H01L21/0257 , H01L21/0262 , H01L29/2003
摘要： An apparatus and method for forming a thin film on a substrate by RPCVD which provides for very low levels of carbon and oxygen impurities and includes the steps of introducing a Group VA plasma into a first deposition zone of a growth chamber, introducing a Group IIIA reagent into a second deposition zone of the growth chamber which is separate from the first deposition zone and introducing an amount of an additional reagent selected from the group consisting of ammonia, hydrazine, di-methyl hydrazine and a hydrogen plasma through an additional reagent inlet into the second deposition zone such that the additional reagent and the Group IIIA reagent mix prior to deposition.
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公开(公告)号：EP3707756A2
公开(公告)日：2020-09-16
申请号：EP18814731.8
申请日：2018-11-06
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公开(公告)号：EP3095305B1
公开(公告)日：2018-08-29
申请号：EP15737284.8
申请日：2015-01-15
IPC分类号： H05H1/46 , C23C16/34 , C23C16/00 , H01J37/32 , C23C16/509
CPC分类号： C23C16/50 , C23C16/34 , C23C16/509 , H01J37/321 , H01J37/32357 , H01J37/32477 , H01J37/32486 , H01J2237/3321
摘要： A plasma generator is described which employs a partial PBN liner not only to minimise the loss of energetic gas species during film formation but also to reduce boron impurity levels introduced into the growing film relative to the use of a complete PBN liner. The use of such a plasma generator in a film forming apparatus and method of forming a film is also described.
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公开(公告)号：EP2758996B1
公开(公告)日：2020-04-01
申请号：EP12832908.3
申请日：2012-09-21
发明人： BARIK, Satyanarayan
IPC分类号： H01L31/0352 , H01L31/0735 , H01L31/0304
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公开(公告)号：EP2872668B1
公开(公告)日：2018-09-19
申请号：EP13816517.0
申请日：2013-07-15
CPC分类号： C23C16/455 , C01B21/0632 , C23C16/303 , C23C16/452 , C23C16/45536 , C23C16/45551 , C23C16/513 , H01B1/06 , H01J37/32357 , H01J37/3244 , H01L21/0254 , H01L21/0257 , H01L21/0262 , H01L29/2003
摘要： An apparatus and method for forming a thin film on a substrate by RPCVD which provides for very low levels of carbon and oxygen impurities and includes the steps of introducing a Group VA plasma into a first deposition zone of a growth chamber, introducing a Group IIIA reagent into a second deposition zone of the growth chamber which is separate from the first deposition zone and introducing an amount of an additional reagent selected from the group consisting of ammonia, hydrazine, di-methyl hydrazine and a hydrogen plasma through an additional reagent inlet into the second deposition zone such that the additional reagent and the Group IIIA reagent mix prior to deposition.
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公开(公告)号：EP2396449A1
公开(公告)日：2011-12-21
申请号：EP10740845.2
申请日：2010-02-12
发明人： REYNOLDS, Guy James , MARTIN, Conor Nicholas , GLOWACKI, Piotr , WINTREBERT EP FOUQUET, Marie-Pierre Francoise , BARIK, Satyanarayan , CHEN, Patrick Po-Tsang
IPC分类号： C23C16/24 , C23C16/452 , H05H1/00
CPC分类号： H01J37/32449 , C23C16/303 , C23C16/452 , C23C16/45523 , C30B25/105 , C30B25/165 , C30B29/403 , H01J37/32357 , H01J37/32422 , H01J37/3244 , H01J37/32633 , H01L21/0237 , H01L21/02521 , H01L21/0262 , Y10T137/8593
摘要： An apparatus for depositing a group III metal nitride film on a substrate, the apparatus comprising a plasma generator to generate a nitrogen plasma from a nitrogen source, a reaction chamber in which to react a reagent comprising a group III metal with a reactive nitrogen species derived from the nitrogen plasma so as to deposit a group III metal nitride on the substrate, a plasma inlet to facilitate the passage of nitrogen plasma from the plasma generator into the reaction chamber and a baffle having one or more flow channels for passage of the nitrogen plasma. The baffle is located between the plasma inlet and the substrate and prevents a direct line of passage for nitrogen plasma between the plasma inlet and the substrate.
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