公开(公告)号：EP2442444B1

公开(公告)日：2014-08-20

申请号：EP12150378.3

申请日：2006-03-16

申请人： Cree Microwave, Inc. ,  Cree, Inc.

发明人： Pengelly, Raymond S. ,  Crescenzi, James E. ,  Wood, Simon M. ,  Dekker, Tom S.

IPC分类号： H03F3/68 ,  H03F1/02

CPC分类号： H03F1/0288

公开(公告)号：EP2442444A1

公开(公告)日：2012-04-18

申请号：EP12150378.3

申请日：2006-03-16

申请人： Cree Microwave, Inc. ,  Cree, Inc.

发明人： Pengelly, Raymond S. ,  Crescenzi, James E. ,  Wood, Simon M. ,  Dekker, Tom S.

IPC分类号： H03F3/68 ,  H03F1/02

CPC分类号： H03F1/0288

摘要： A high power Doherty RF amplifier utilizes multi-stage amplifier modules for both the main amplifier and the peak amplifiers. In one embodiment of a two way two stage amplifier, the first stage of each amplifier module can include signal pre-distortion whereby the first stage compensates for distortion in both the first and second stages. The design is simple and results in a high efficiency amplifier with high gain. In one embodiment, a commercially available CREE PFM19030SM power module is used in both the main amplifier and the peak amplifier.

摘要翻译： 大功率Doherty RF放大器利用主放大器和峰值放大器的多级放大器模块。 在双向两级放大器的一个实施例中，每个放大器模块的第一级可以包括信号预失真，由此第一级补偿第一级和第二级的失真。 该设计简单，产生了具有高增益的高效率放大器。 在一个实施例中，市售的CREE PFM19030SM功率模块用于主放大器和峰值放大器。

公开(公告)号：EP1861920A2

公开(公告)日：2007-12-05

申请号：EP06739337.1

申请日：2006-03-16

申请人： Cree Microwave, Inc. ,  CREE, INC.

发明人： PENGELLY, Raymond, S. ,  CRESCENZI, James, E., Jr. ,  WOOD, Simon, M. ,  DEKKER, Tom, Stewart

IPC分类号： H03F3/68

CPC分类号： H03F1/0288

摘要： A high power Doherty RF amplifier utilizes multi-stage amplifier modules for both the main amplifier and the peak amplifiers. In one embodiment of a two way two stage amplifier, the first stage of each amplifier module can include signal pre-distortion whereby the first stage compensates for distortion in both the first and second stages. The design is simple and results in a high efficiency amplifier with high gain. In one embodiment, a commercially available CREE PFM19030SM power module is used in both the main amplifier and the peak amplifier.

公开(公告)号：EP1620325A2

公开(公告)日：2006-02-01

申请号：EP04749959.5

申请日：2004-04-09

申请人： Cree Microwave, Inc.

发明人： PENGELLY, Raymond, Sydney ,  WOOD, Simon, Maurice

IPC分类号： B65D51/16 ,  B65D51/24

CPC分类号： H03F1/0288 ,  H03F1/0277 ,  H03F1/32 ,  H03F3/602 ,  H03F2200/451 ,  H03F2201/3203

摘要： An RF power amplifier circuit for amplifying an RF signal over a broad range of power with improved efficiency includes a carrier amplifier for amplifying an RF signal over a first range of power and with a power saturation level below the maximum of the broad range of power is disclosed. One or more peak amplifiers are connected in parallel with the carrier amplifier with each of the peak amplifiers being biased to sequentially provide an amplified output signal after the carrier amplifier approaches saturation. The input signal is applied through a signal splitter to the carrier amplifier and the plurality of peak amplifiers, and an output for receiving amplified output signals from the carrier amplifier and the plurality of peak amplifiers includes a resistive load R/2. The split input signal is applied through a 90° transformer to the carrier amplifier, and the outputs of the peak amplifiers are applied through 90° transformers to a output load. When operating below saturation, the carrier amplifier delivers power to a load of 2R when the carrier amplifier delivers current to the load, which is one-half the current at maximum power and the amplifier is saturated. The signal splitter can split the input signal power equally among the carrier and one or more peak amplifiers, or the input signal can be split unequally with the carrier amplifier receiving less input power than each of the peak amplifiers and vice versa.

摘要翻译： 用于以宽的功率范围放大RF信号并具有提高的效率的RF功率放大器电路包括用于在第一功率范围上放大RF信号的载波放大器，并且功率饱和电平低于宽范围功率的最大值 披露。 一个或多个峰值放大器与载波放大器并联连接，每个峰值放大器被偏置以在载波放大器接近饱和之后顺序地提供放大的输出信号。 输入信号通过信号分离器施加到载波放大器和多个峰值放大器，并且用于接收来自载波放大器和多个峰值放大器的放大输出信号的输出包括电阻负载R / 2。 分离输入信号通过90°变压器施加到载波放大器，峰值放大器的输出通过90°变压器施加到输出负载。 当工作在饱和以下时，当载波放大器向负载提供电流时，载波放大器为2R负载提供电源，这是最大功率下电流的一半，且放大器饱和。 信号分配器可以在载波和一个或多个峰值放大器之间均等地分配输入信号功率，或者输入信号可以不均匀地分配，其中载波放大器接收比每个峰值放大器更少的输入功率，反之亦然。

公开(公告)号：EP1470636A1

公开(公告)日：2004-10-27

申请号：EP03705926.8

申请日：2003-01-23

申请人： Cree Microwave, Inc.

发明人： PENGELLY, Raymond, Sydney

IPC分类号： H03F3/68

CPC分类号： H03F1/32 ,  H03F1/0277 ,  H03F1/0288 ,  H03F3/602 ,  H03F2201/3203

摘要： An RF power amplifier for amplifying an RF signal over a broad range of power with improved efficiency includes a main amplifier (20) for amplifying an RF signal over a first range of power and with a power saturation level below the maximum of the broad range of power. A plurality of auxiliary amplifiers (21, 22, 23) are connected in parallel with the main amplifier (20) with each of the auxiliary amplifiers (21, 22, 23) being biased to sequentially provide an amplified output signal after the main amplifier (20) approaches saturation. The input signal is applied through a signal splitter (32) to the main amplifier (20) and the plurality of auxiliary amplifiers (21, 22, 23), and an output for receiving amplified output signals from the main amplifier (20) and the plurality of auxiliary amplifiers (21, 22, 23) includes a resistive load R/2. The split input signal is applied through a 90° transformer (30) to the main amplifier (20), and the outputs of the auxiliary amplifiers (21, 22, 23) are applied through 90° transformers (24, 25, 26) to a output load (28). When operating below saturation, the main amplifier (20) delivers power to a load of 2R and the main amplifier (20) delivers current to the load which is one-half the current at maximum power and the amplifier is saturated.

公开(公告)号：EP1861920A4

公开(公告)日：2009-12-02

申请号：EP06739337

申请日：2006-03-16

申请人： CREE MICROWAVE INC ,  CREE INC

发明人： PENGELLY RAYMOND S ,  CRESCENZI JAMES E JR ,  WOOD SIMON M ,  DEKKER TOM STEWART

IPC分类号： H03F3/68

CPC分类号： H03F1/0288

公开(公告)号：EP1573908A1

公开(公告)日：2005-09-14

申请号：EP03768732.4

申请日：2003-11-04

申请人： Cree Microwave, Inc.

发明人： PENGELLY, Raymond, S. ,  WOOD, Simon, M. ,  QUINN, John, P.

IPC分类号： H03F3/68

CPC分类号： H03F3/602 ,  H03F1/3205 ,  H03F3/211

摘要： The linearity of a transistor amplifier comprising a plurality of transistors operating parallel is improved by reducing the odd order transconductance derivatives of signals generated by the transistors. The transistors can be provided in groups with each group having a different bias voltage applied thereto or each group of transistors can have a different input signal applied thereto. The groups of transistors can have different physical parameters suchas the width to length ratio of gates in field effect transistors and threshold voltages for the transistors.

公开(公告)号：EP1570572A1

公开(公告)日：2005-09-07

申请号：EP03790018.0

申请日：2003-11-24

申请人： Cree Microwave, Inc.

发明人： PENGELLY, Raymond, Sydney ,  WOOD, Simon, Maurice ,  QUINN, John, Phillip

IPC分类号： H03F3/68

CPC分类号： H03F3/602 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L2223/6644 ,  H01L2224/48091 ,  H01L2224/49111 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13063 ,  H01L2924/13064 ,  H01L2924/19043 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： Disclosed are a multi-chip power amplifier comprising a plurality of chips (20-23) with each chip being a transistor amplifier, and a housing (36) in which all of the semiconductor chips are mounted. A plurality of input leads extend into the housing and a plurality of output leads extend from the housing. A plurality of first matching networks (38) couple a semiconductor chip to an input lead and a plurality of second matching networks (40) couple each semiconductor chip to an output lead whereby each chip has its own input lead and output lead. By providing all amplifier chips within a single housing with matching networks within the housing coupling the chips to the input and output leads, manufacturing cost is reduced and the overall package footprint on a mounting substrate is reduced. Further, the close proximity of the chips within the housing reduces phase differences among signals in the semiconductor chips.

公开(公告)号：EP1470636A4

公开(公告)日：2005-05-04

申请号：EP03705926

申请日：2003-01-23

申请人： CREE MICROWAVE INC

发明人： PENGELLY RAYMOND SYDNEY

IPC分类号： H03F3/68 ,  H03F1/02 ,  H03F1/07 ,  H03F1/32 ,  H03F3/24 ,  H03F3/60

CPC分类号： H03F1/32 ,  H03F1/0277 ,  H03F1/0288 ,  H03F3/602 ,  H03F2201/3203

摘要： An RF power amplifier for amplifying an RF signal over a broad range of power with improved efficiency includes a main amplifier (20) for amplifying an RF signal over a first range of power and with a power saturation level below the maximum of the broad range of power. A plurality of auxiliary amplifiers (21, 22, 23) are connected in parallel with the main amplifier (20) with each of the auxiliary amplifiers (21, 22, 23) being biased to sequentially provide an amplified output signal after the main amplifier (20) approaches saturation. The input signal is applied through a signal splitter (32) to the main amplifier (20) and the plurality of auxiliary amplifiers (21, 22, 23), and an output for receiving amplified output signals from the main amplifier (20) and the plurality of auxiliary amplifiers (21, 22, 23) includes a resistive load R/2. The split input signal is applied through a 90° transformer (30) to the main amplifier (20), and the outputs of the auxiliary amplifiers (21, 22, 23) are applied through 90° transformers (24, 25, 26) to a output load (28). When operating below saturation, the main amplifier (20) delivers power to a load of 2R and the main amplifier (20) delivers current to the load which is one-half the current at maximum power and the amplifier is saturated.

公开(公告)号：EP1446836A1

公开(公告)日：2004-08-18

申请号：EP02778688.8

申请日：2002-10-30

申请人： Cree Microwave, Inc.

发明人： DARMAWAN, Johan, Agus

IPC分类号： H01L27/01

CPC分类号： H01L29/78603 ,  H01L23/3677 ,  H01L2924/0002 ,  H01L2924/10158 ,  H01L2924/3011 ,  H01L2924/00

摘要： A semiconductor device is fabricated in a silicon on insulator “SOI” substrate including a supporting silicon substrate (10), a silicon oxide layer supported by the substrate, and a silicon layer overlying the silicon oxide layer. An electrical component is fabricated in the silicon layer over a portion of the silicon oxide layer (12), and then the substrate opposite from the component is masked and etched. A metal layer (20) is then formed in the portion of the substrate which has been removed by etching with the metal layer providing heat removal from the component. In an alternative embodiment, the silicon oxide layer overlying the portion of the substrate is removed with the metal layer abutting the silicon layer. In fabricating the device, preferential etching is employed to remove the silicon in the substrate with the silicon oxide functioning as an etchant stop. A two step process can be employed including a first oxide etch to etch the bulk of the silicon and then a more selective but slower etch. Then, the exposed silicon oxide can then be removed, as in the alternative embodiment, by a preferential etchant of silicon oxide.