摘要:
A light modulation device comprises a substrate (1), a substrate layer (2), an optical waveguide layer (3) and buffer layers (4), in that order, formed of either all n-type or all p-type compound semiconductor crystal. In orderto capture the light in the optical waveguide layer, the composition ratio of the compound semiconductor is so determined that the refractive index is at least approximately 0.1% higher in the optical waveguide layers than in the substrate layer and in the buffer layers. Furthermore, the carrier density is low in the optical waveguide layer and in the buffer layers, so that the applied voltage is effectively applied mainly to the optical waveguide layer. Due to the construction of the light modulation device, strict control of the etching process is not required, the device has a low absorption loss of light, and it can be made as a monolithic optical integrated circuit.
摘要:
A supporting device, such as a robot (4), comprises a first member, i.e. an arm (5), which supports resilient means (3;302) for resiliently supporting a second member, i.e. a hand (6). The supporting device includes detection means (305) for detecting displacement of the resilient means (302) with respect to the first member in accordance with the movement of the second member, and biasing means (306,308,321) which applies a force to the resilient means from the same direction as, or from a direction opposite to, that of the displacement, for changing the elasticity of the resilient means in accordance with the movement of the second member.
摘要:
A thermal head for high speed printing at high temperature comprises a dielectric substrate (10,15), a first thin SiO. layer (20) formed on the substrate, a heater layer (30) on the first SiO 2 layer, conductive layers (40) for coupling the heater layers to an external circuit, a second thin SiO 2 layer (50) on the heater layer, and a protection layer (60) over the second SiO 2 layer. The width of the heater layer is less than 30 µm. The preferable thickness of the SiO 2 layers is less than 2 µm. Preferably, the heater layer is made of tantalum nitride. The presence of the first SiO 2 layer (20) and the narrow width of the heater layer (30) allow the heater to operate at a higher input power, and hence at a higher temperature.
摘要:
A telephone answering and message recording system comprises a microphone (4), an analog-digital converter (6) for converting the analog speech signal of the microphone (4) to a digital signal, a digital memory (M 1 , M 2 , M 3 , M 4 , MEM,-MEM n ) for storing the digital speech signal from the converter (6), a digital-analog converter (7) for re-converting the digital signal of the output of the memory to an analog signal, and a speaker (5) coupled to the output of the digital-analog converter (7). The system also comprises a PB (push button) code receiver (40) for detecting a PB code which is the combination of two frequencies. The operational mode and/or the memory to record or reproduce speech is switched by the particular PB code. The system may operate in a first, fixed answering, mode in which a fixed answer recorded in the memory is transmitted to a remote subscriber or in a second, adaptive oral communication, mode in which speech recorded in the memory can be revised and/or transmitted to a remote subscriber through a telephone line. In the latter mode, two remote persons may communicate with each other through the system even when those two persons do not call the system simultaneously.
摘要:
In a semiconductor integrated circuit comprising a semiconductor substrate wherein a plurality of basic cells (16,17) is arranged on the surface of the semiconductor substrate in array fashion, each basic cell has circuit elements including at least a transistor (21) and a plurality of resistors (R 1 -R 4 ). Macro-cells each comprising a plurality of basic cells are constructed by interconnecting the circuit elements in the basic cells (16,17) to form a desired logic circuit, and at least one resistor element of the logic circuit in the macro-cell is constructed by connecting in parallel at least two resistors (R 4 ,R 4 ) belonging to different basic cells so that the freedom of the wiring layout in the macro-cell wiring area is increased and the current distribution between the basic cells is equalized.
摘要:
In a laser scalpel apparatus, an optical fibre (5) is used as a light guide, and the optical fibre is guided from a laser unit (1) housing a laser source, to the areas to be irradiated, along a support (4) fixed to the unit 1. The optical fibre is provided with a handpiece (7) embracing its forward end portion. The handpiece is shaped to facilitate the directing of the forward end of the fibre toward the areas to be irradiated. A supporting wire (9) is provided along the support (4) so as to be axially movable. The forward end of the wire is connected to the handpiece and the rear end of the wire is connected to balancing means (10; 11-16) for counterbalancing the weight of the handpiece and the suspended part of the fibre (5), so that the handpiece and the fibre can be easily moved to desired positions during an operation, and can be retained out of the way of the operating area when not in use.
摘要:
A hybrid integrated circuit device comprises, in combination, a semiconductor integrated circuit element (1) and a film resistor pattern (7). The film resistor pattern is formed on the outer surface of a base (6) which is mounted on a multilayer ceramic package (2) which incorporates the element. In this assembled hybrid device, function trimming of the film resistor pattern can be carried out by using a computer whilst the device is operating.
摘要:
In the production of an MOS transistor or a one-MOS transistor/one-capacitor memory cell, a gate electrode (14) is made of aluminum, doped regions (15, 16) are formed by an ion-implatation method using the gate electrode as a mask, and the doped regions are annealed by a laser beam.
摘要:
A semiconductor buffer circuit which is energisable by a power supply (Vcc,Vss) comprises an input stage (Q1-Q4) for receiving an input clock signal (φ 0 ) and an inverted input clock signal ( φ 0 ). A bootstrap circuit (Q5-Q7), which includes a transistor (Q6) for receiving the output of the input stage circuit, maintains the gate voltage of that transistor at a high level during a standby period. An output circuit (Q8-Q12), including a transistor (Q11) which is switched on and off by the output of the bootstrap circuit, generates an output clock signal (φ 1 ). The circuit is characterised by a current leak circuit (X) which maintains, during the standby period, the voltage of a point (N2) in the semiconductor circuit which is charged during the standby period to a level corresponding to the voltage (Vcc) of the power source. A delay in the output clock signal, which is caused by a fluctuation in the voltage of the power supply during the standby period, is thereby reduced, so that the circuit can be used for fast accessing of a dynamic memory. The current leak circuit (X) may comprise two field-effect transistors (Q13,Q14) connected in series, or various arrangements of field-effect transistors and/or resistors.
摘要:
An acoustic surface wave transducer with a transmission interdigital electrode (2A) and a reception interdigital electrode (2B) on a piezoelectric surface (1) has been improved by reducing the inband dispersion of frequency characteristics by providing an edge-effect canceller (k,), which cancels an undesired surface wave (E-a) which is generated at the external edge of the extreme end finger (11) of the interdigital electrode (10). The edge-effect canceller is constructed so that the length of the extreme end finger (11) is half of the length of the second extreme end finger (12) of the interdigital electrode, and the spacing between the extreme end finger (11) and the second extreme end finger (12) is 1/2 wavelength of the acoustic surface wave. Thus, the phase of the undesired surface wave (E-a) generated by the extreme end finger (11) of the transmission interdigital electrode is opposite to the wave (E-b) generated by the second extreme end finger (12) and the waves are of equal strength. Hence, those surface waves cancel each other as regards effect on the reception interdigital electrode (28), and the inband deviation or dispersion in the amplitude characteristic and/or the group delay characteristic of the transducer is reduced.