公开(公告)号：EP2440958A4

公开(公告)日：2014-08-27

申请号：EP10786926

申请日：2010-06-11

申请人： BINOPTICS CORP

发明人： BEHFAR ALEX ,  STAGARESCU CRISTIAN

IPC分类号： G02B6/10 ,  G02B6/42 ,  H01S5/022 ,  H01S5/026 ,  H01S5/028 ,  H01S5/065 ,  H01S5/10 ,  H01S5/125 ,  H01S5/18 ,  H01S5/22 ,  H01S5/40

CPC分类号： H01S5/18 ,  G02B6/4214 ,  H01S5/02284 ,  H01S5/0264 ,  H01S5/028 ,  H01S5/0654 ,  H01S5/1085 ,  H01S5/125 ,  H01S5/22 ,  H01S5/4031 ,  H01S5/4087 ,  H01S2301/18

公开(公告)号：EP1413016B1

公开(公告)日：2008-09-17

申请号：EP02746451.0

申请日：2002-06-25

申请人： Binoptics Corporation

发明人： BEHFAR, Alex

IPC分类号： H01S3/083 ,  H01S5/10

CPC分类号： H01S5/1071 ,  Y10S438/94

摘要： A ring-type laser including a traveling wave cavity which incorporates at least first and second straight cavity sections and at least one curved cavity sections are interconnected at a first light-emitting facet, and second ends of the straight sections are interconnected by the curved waveguide. Additional curved and straight sections can be linked to provide various ring configurations.

公开(公告)号：EP1735884A4

公开(公告)日：2008-05-14

申请号：EP05744345

申请日：2005-04-14

申请人： BINOPTICS CORP

发明人： BEHFAR ALEX A ,  GREEN MALCOLM R ,  SCHREMER ALFRED T

IPC分类号： H01S5/00 ,  G02B6/12 ,  G02B6/122 ,  G02B6/13 ,  G02F1/017 ,  H01S5/026 ,  H01S5/028 ,  H01S5/0683 ,  H01S5/10 ,  H01S5/22 ,  H01S5/343

CPC分类号： B82Y20/00 ,  G02B6/12002 ,  G02B6/12004 ,  G02B6/122 ,  G02B6/131 ,  G02B2006/12104 ,  G02F1/01708 ,  G02F2202/102 ,  H01S5/005 ,  H01S5/0071 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/028 ,  H01S5/0683 ,  H01S5/1014 ,  H01S5/1017 ,  H01S5/1021 ,  H01S5/1032 ,  H01S5/22 ,  H01S5/34306

摘要： A laser (40) and electroabsorption modulator (EAM) (44) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure (44). Strong optical coupling between the laser and the EAM (44) is realized by using two 45-degree turning mirrors (52 and 66) to route light vertically from the laser waveguide to the EAM waveguide (44). A directional angled etch process is used to form the two angled facets.

公开(公告)号：EP1706894A2

公开(公告)日：2006-10-04

申请号：EP05705938.8

申请日：2005-01-19

申请人： Binoptics Corporation

发明人： BEHFAR, Alex, A. ,  GREEN, Malcolm, R. ,  SCHREMER, Alfred, T.

IPC分类号： H01L21/00

CPC分类号： H01S5/0264 ,  H01S5/005 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/02292 ,  H01S5/0262 ,  H01S5/0683 ,  H01S5/1085 ,  H01S5/18 ,  H01S5/2022 ,  H01S5/4012 ,  H01S5/4056 ,  H01S5/4087

摘要： A laser (22) and detector (24) integrated on corresponding epitaxial layers of a single chip (20) cooperate with on-chip and/or external optics (62) to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber (60) and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels.

公开(公告)号：EP1683239A2

公开(公告)日：2006-07-26

申请号：EP04793940.0

申请日：2004-10-14

申请人： Binoptics Corporation

发明人： BEHFAR, Alex, A.

IPC分类号： H01S1/00 ,  H01S3/08

CPC分类号： H01S5/0264 ,  H01S5/02284 ,  H01S5/026 ,  H01S5/0262 ,  H01S5/0267 ,  H01S5/0654 ,  H01S5/0683 ,  H01S5/1014 ,  H01S5/1085 ,  H01S5/125 ,  H01S5/141 ,  H01S5/18 ,  H01S5/22 ,  H01S5/2231 ,  H01S5/4012 ,  H01S5/42

摘要： A surface-emitting laser (see Fig. 2, Character 10), in which light is emitted vertically at one end from a near 45° angled facet, includes a second end (see Fig. 2, Character 28) having a perpendicular facet from which light is emitted horizontally, for monitoring. The surface-emitting laser (see Fig. 2, Character 10) comprises a divergence-compensating lens (see Fig. 21, Character 282) on the surface above the near 45°angled facet.

公开(公告)号：EP1609221A4

公开(公告)日：2006-05-24

申请号：EP04757753

申请日：2004-03-18

申请人： BINOPTICS CORP

发明人： BEHFAR ALEX A ,  SCHREMER ALFRED T JR ,  STAGARESCU CRISTIAN B

IPC分类号： H01S3/083 ,  G02B6/12 ,  G02B6/125 ,  H01S3/00 ,  H01S3/08 ,  H01S5/00 ,  H01S5/10 ,  H01S5/125 ,  H01S5/14

CPC分类号： H01S5/0287 ,  G02B6/12004 ,  H01S5/005 ,  H01S5/0085 ,  H01S5/0656 ,  H01S5/1021 ,  H01S5/1071 ,  H01S5/1082 ,  H01S5/125 ,  H01S5/14

摘要： Unidirectionality of lasers is enhanced by forming one or more etched gaps (78, 80) in the laser cavity. The gaps may be provided in any segment of a laser, such as any leg of a ring laser, or in one leg (62) of a V-shaped laser (60). A Brewster angle facet at the distal end of a photonic device coupled to the laser reduces back-reflection into the laser cavity. A distributed Bragg reflector is used at the output of a laser to enhance the side-mode suppression ratio of the laser.

公开(公告)号：EP2847834A1

公开(公告)日：2015-03-18

申请号：EP13787334.5

申请日：2013-05-07

申请人： Binoptics Corporation

发明人： STAGARESCU, Cristian ,  BEHFAR, Alex, A. ,  KWONG, Norman, Sze-keung

IPC分类号： H01S5/00

CPC分类号： H01S5/3013 ,  B82Y20/00 ,  H01S5/0207 ,  H01S5/0217 ,  H01S5/02212 ,  H01S5/02236 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/0267 ,  H01S5/0287 ,  H01S5/1085 ,  H01S5/22 ,  H01S5/34326 ,  H01S2301/18

摘要： A beam control structure for semiconductor lasers that allows modification of the shape of a beam allowing, for example, higher coupling into an optical fiber. The structure may comprise one or more of a tilted patio, a staircase, a reflective roof, and a reflective sidewall.

公开(公告)号：EP2797185A1

公开(公告)日：2014-10-29

申请号：EP14176634.5

申请日：2006-06-20

申请人： Binoptics Corporation

发明人： Behfar, Alex A. ,  Schremer, Alfred, T. ,  Stagarescu, Cristian, B. ,  Vainateya, NLN

IPC分类号： H01S5/02 ,  H01L21/00

CPC分类号： H01S5/0201 ,  B82Y20/00 ,  H01S5/0042 ,  H01S5/0203 ,  H01S5/0262 ,  H01S5/0264 ,  H01S5/028 ,  H01S5/1039 ,  H01S5/18 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/34333

摘要： A method for fabricating a nitride-based semiconductor laser, comprising:
forming a mask on a p-doped cap layer of a nitride-based semiconductor laser structure;
said mask maintaining the conductivity of said cap layer; and
using ion beam in excess of 500 V in CAIBE to form an etched facet in said laser structure.

摘要翻译： 一种用于制造氮化物基半导体激光器的方法，包括：在氮化物基半导体激光器结构的p掺杂帽层上形成掩模; 所述掩模保持所述盖层的导电性; 并且在CAIBE中使用超过500V的离子束在所述激光器结构中形成蚀刻刻面。

公开(公告)号：EP2440958A1

公开(公告)日：2012-04-18

申请号：EP10786926.5

申请日：2010-06-11

申请人： Binoptics Corporation

发明人： BEHFAR, Alex ,  STAGARESCU, Cristian

IPC分类号： G02B6/10

CPC分类号： H01S5/18 ,  G02B6/4214 ,  H01S5/02284 ,  H01S5/0264 ,  H01S5/028 ,  H01S5/0654 ,  H01S5/1085 ,  H01S5/125 ,  H01S5/22 ,  H01S5/4031 ,  H01S5/4087 ,  H01S2301/18

摘要： A surface emitting photonic device including a substrate; and a waveguide structure on the substrate. The waveguide structure includes an active region along its longitudinal axis and the active region is for generating light. The waveguide structure also has a trench formed therein transverse to the active region and defining a first wall forming an angled facet at one end of the active region, the first wall having a normal that is at a non-parallel angle relative to the longitudinal axis of the waveguide structure. The trench also defines a second wall located opposite the first wall.

公开(公告)号：EP1854189A4

公开(公告)日：2011-04-13

申请号：EP06735363

申请日：2006-02-17

申请人： BINOPTICS CORP

发明人： BEHFAR ALEX A

IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S5/028

CPC分类号： H01S5/323 ,  G02F1/17 ,  H01S5/0042 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/16 ,  H01S5/22 ,  H01S5/2214