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    DEFECT REDUCTION IN A SUBSTRATE TREATMENT METHOD
    1.
    发明公开
    DEFECT REDUCTION IN A SUBSTRATE TREATMENT METHOD 审中-公开
    减少缺陷的基板处理方法

    公开(公告)号：EP2959502A4

    公开(公告)日：2016-11-09

    申请号：EP14753831

    申请日：2014-02-25

    申请人： EXOGENESIS CORP

    发明人： KIRKPATRICK SEAN R

    IPC分类号： H01L21/306 ,  G03F1/82 ,  H01L21/02

    CPC分类号： G03F1/80 ,  G03F1/50 ,  G03F1/82 ,  H01J2237/0041 ,  H01J2237/05 ,  H01L21/02046 ,  H01L21/02065 ,  H01L2924/0002 ,  H01L2924/00012

    摘要： A method for treating a substrate surface uses Neutral Beam irradiation derived from a gas-cluster ion-beam and articles produced thereby including lithography photomask substrates. One embodiment provides a method of treating a surface of a substrate that contains one or more embedded particles or contains sub-surface damage, comprising the steps of: providing a reduced pressure chamber; forming a gas-cluster ion-beam comprising gas-cluster ions within the reduced pressure chamber; accelerating the gas-cluster ions to form an accelerated gas-cluster ion-beam along a beam path within the reduced pressure chamber; promoting fragmentation and/or dissociation of at least a portion of the accelerated gas-cluster ions along the beam path; removing charged particles from the beam path to form an accelerated neutral beam along the beam path in the reduced pressure chamber; holding the surface in the beam path; and treating at least a portion of the surface of the substrate by irradiation.