摘要:
A ring-style, multi-stage VCO of a phase lock loop circuit (100) includes two or more differential amplifier stages. The phase lock loop (100) includes a lowpass filter (108) connected between a control voltage terminal and a voltage-to-current converter stage (110), which includes a first source-follower MOS transistor M1 with a source resistor R1 and a second diode-connected MOS transistor M2 connected to its drain terminal. A differential amplifier stage includes a current-source MOS transistor M10 having a gate terminal connected to the drain of the first MOS transistor M1 to current mirror the drain current of M1. The differential amplifier stage also includes a pair of MOS transistors M4 and M5 connected to the drain terminal of the current-source MOS transistor M10. The gate terminal of MOS transistor M4 is an IN terminal and the gate terminal of MOS transistor M5 is an IN_ terminal. The drain terminal of MOS transistor M4 provides an OUT_ signal for the differential amplifier stage and the drain terminal of MOS transistor M5 provides an OUT signal for the differential amplifier stage. A MOS transistor M6 forms a load impedance for MOS transistor M4 and a MOS transistor M7 forms a load impedance for MOS transistor M5. The gate terminals of M6 and M7 are connected to the voltage control input terminal of the phase lock loop.
摘要:
The present invention comprises a smart debug interface circuit (203) for the diagnostic testing and debugging of a software application for a programmable digital processor system. The smart debug interface circuit (203) of the present invention includes an instruction register (404) for coupling to an instruction bus of a programmable digital processor (202). The instruction register (404) is adapted to drive instructions onto the instruction bus. The instruction register (404) couples to the instruction bus in a parallel manner. The smart debug interface circuit (203) of the present invention includes a data register (407) for coupling to a data bus of the programmable digital processor (202). The data register (407) is adapted to read data from the data bus and couples to the data bus in a parallel manner. The instruction register (404) and data register (407) are each coupled to an interface port. The interface port couples the smart debug interface circuit to a host computer system. A control logic circuit (401) is also included in the smart debug interface circuit (203) of the present invention. The control logic circuit (401) is coupled to the instruction register (404), the data register (407), and the interface port. The control logic circuit (401) interfaces a debugging program on the host computer system to the programmable digital processor (202). Additionally, the control logic circuit (401) interfaces the debugging program with the programmable digital processor (202) without imposing boundary scan bus delay on the instruction bus or the data bus.
摘要:
A clock synchronization circuit for synchronizing a first communications device and a second communications device to enable digital communication between the devices. The clock synchronization circuit includes an oscillator circuit adapted to generate a base clock signal. A first frequency divider is coupled to the oscillator circuit. The first frequency divider generates a first divider clock signal from the base clock signal. A phase comparison circuit is coupled to receive the first divider clock signal. Additionally, the phase comparison circuit is also coupled to the oscillator circuit to control the frequency of the base clock signal. The phase comparison circuit receives a reference clock signal from a first communications device and adjusts the base clock frequency to correct a phase difference between the first divider clock signal and the reference clock signal. The clock synchronization circuit further includes a second frequency divider coupled to the oscillator circuit. The second frequency divider is adapted to generate a second divider clock signal from the base clock signal, wherein the second divider clock signal varies in response to the correcting performed on the base clock signal by the phase comparison circuit. The second frequency divider subsequently provides the second divider clock signal to a second communications device such that the first communications device and the second communications device are synchronized.
摘要:
An apparatus and method which overcomes connectivity limitations on PCMCIA and PC-CARD95 compatible devices by reconfiguring standard PCMCIA and PC-CARD pins for additional electrical interfaces. A detection circuit in the PC-card can detect the different interfaces. Once the different interfaces are identified, the connections to the receptacles of the PC-card connector are reconfigured such that the functional assignments of the receptacles conform with the requirements of each different interface. Thus, connection between different electrical interfaces to the physical interface of a PCMCIA-compatible device, without interference between them is possible. This eliminates the need for extra connectors other than the standard PCMCIA and PC-CARD95 connector. Thus, more versatile products with enhanced connectivity may be designed which use the PCMCIA and PC-CARD95 standards.
摘要:
A method in accordance with the present invention for developing an integrated circuit design using a compilation tool includes: (A) developing at least one HDL template by: (a) creating the HDL template; (b) creating a parameter file and a parameter check file for the HDL template; and (c) encrypting the HDL template; (B) developing design specifications for use in creating HDL for synthesis and for use in compiling one or more macro blocks; (C) creating the HDL for synthesis; and (D) creating netlists for at least one macro block instantiated in the HDL template using the design specifications. A development tool of the present invention implements the method on a computer system to form a portion of an integrated circuit fabrication system.
摘要:
A first metallic layer (16) is deposited over the substrate (10) and the contact well (14) formed therein. The first metallic layer (16) is then exposed to a gas to allow the gas to stuff the first metallic layer, thereby improving the barrier characteristics of the first metallic layer. A second metallic layer (22) is deposited over the first stuffed metallic layer (16). A third metallic layer (24) is then deposited over the second metallic layer. An anti-reflective fourth layer of metal (26) is then deposited over the third metallic layer (24). The exposure of the first metallic layer (16) to a gas and all of the metal layer deposition steps are performed in a low-pressure environment. Also, as an result of subsequent processing steps required in the formation of semiconductor devices, the portions of the first metallic layer which are present outside of the contact well are removed. The remaining portion of the first metallic layer forms a self-aligned silicide within the contact well.
摘要:
A method for encrypting and decrypting digital data. The digital data is initially latched by an input register. Sixteen separate cipher stages cascaded in series are used to encrypt the digital data. These cipher stages are operating at a maximum frequency limited only by the process technology. The encoded digital data from the last cipher stage is stored in an output register. The input and output registers are capable of being clocked at an interface frequency that is different from that of the DES core's data frequency. After an appropriate number of cycles have elapsed, the output register is sampled. A programmable counter is used to indicate when the output register contains valid encrypted data.
摘要:
A ring-style, multi-stage VCO of a phase lock loop circuit (100) includes two or more differential amplifier stages (132-140). The phase lock loop (100) includes a lowpass filter (108) connected between a control voltage terminal and a voltage-to-current converter stage (110), which includes a first source-follower MOS transistor M1 with a source resistor R1 and a diode-connected MOS transistor M2 connected to its drain terminal. A current-source MOS transistor M8 has a gate terminal connected to the drain of the first MOS transistor M1 such that the transistor M8 mirrors current of transistor M1. A diode-connected transistor M9 has its gate terminal and its drain terminal connected together and also to the drain terminal of transistor M8. A differential amplifier stage includes a current-source MOS transistor M10 having a gate terminal connected to the drain of the first MOS transistor M1 to mirror the drain current of M1. The differential amplifier stage also includes a pair of MOS transistors M4 and M5 connected to the drain terminal of the current-source MOS transistor M10. The gate terminal of MOS transistor M4 is an IN terminal and the gate terminal of MOS transistor M5 is an IN-terminal. The drain terminal of MOS transistor M4 provides an OUT- signal for the differential amplifier stage and the drain terminal of MOS transistor M5 provides an OUT signal for the differential amplifier stage. A MOS transistor M6 forms a load impedance for MOS transistor M4 and a MOS transistor M7 forms a load impedance for MOS transistor M5. The gate terminals of M6 and M7 are connected to the drain terminal of transistor M9.
摘要:
A high performance ball grid array is disclosed in which a ball grid array is modified to include a body having a recessed central cavity. The inclusion of a central cavity allows the die to be mounted on the same side of the package in which the solder balls are located. Since the die is mounted on the same side as that of the solder balls, only one set of leads is needed to electrically connect the die to the solder balls, thus requiring only one layer of electrically conductive material within the package, as opposed to conventional ball grid array packages which required two metal layers. In addition, since only one metal layer is needed, the present invention is able to operate without the use of electrically conductive vias. The die is connected via wirebonds to bonding areas located on the package. Each of the bonding areas is substantially co-planar, and each bonding area is located at a different distance from one edge of the central cavity, thereby forming a staggered arrangement. The advantage of positioning the bonding areas in a staggered arrangement is that it enables the spacing between each of the adjacent bonding wires to be maintained, thereby avoiding fan-out of the bonding wires and avoiding the need for multi-level bonding areas in the package.
摘要:
An anti-fuse structure characterized by a substrate (18), an oxide layer (46) formed over the substrate having an opening (48) formed therein, an amorphous silicon material (52) disposed within the opening and contacting the substrate, a conductive protective material (59), such as titanium tungsten, disposed over the amorphous silicon material, and oxide spacers (64) lining the walls of a recess formed within the protective material. The protective material and the spacers provide tighter programming voltage distribution for the anti-fuse structure and help prevent anti-fuse failure.