Semiconductor device
    5.
    发明公开
    Semiconductor device 审中-公开
    半导体器件

    公开(公告)号:EP2546873A2

    公开(公告)日:2013-01-16

    申请号:EP12171592.4

    申请日:2012-06-12

    发明人: Sato, Homare

    IPC分类号: H01L25/065

    摘要: Disclosed herein is a semiconductor device that includes: a first circuit formed on a chip having a main surface; first to n th penetration electrodes penetrating through the chip, where n is an integer more than 1; first to n th main terminals arranged on the main surface of the chip and vertically aligned with the first to n th penetration electrodes, respectively, each of k th main terminal being electrically connected to k+1 th penetration electrode, where k is an integer more than 0 and smaller than n, and the n th main terminal being electrically connected to the first penetration electrode; a sub-terminal arranged on the main surface of the chip; and a selection circuit electrically connected to predetermined one of the first to n th main terminals, the sub-terminal, and the first circuit, wherein the selection circuit connects the first circuit to one of the predetermined main terminal and the sub-terminal.

    摘要翻译: 本文公开了一种半导体器件,其包括:形成在具有主表面的芯片上的第一电路; 第一至第n穿透芯片的穿透电极,其中n是大于1的整数; 第一至第n主端子,设置在芯片的主表面上并分别与第一至第n穿透电极垂直对齐,每个第k主端子电连接至第k + 1个穿透电极,其中k是大于0的整数;以及 小于n,并且第n主端子电连接到第一穿透电极; 布置在芯片的主表面上的子端子; 以及电连接到第一至第n主端子,子端子和第一电路中预定的一个的选择电路,其中选择电路将第一电路连接到预定主端子和子端子中的一个。