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1.发明公开Performance evaluation method for plasma processing apparatus for continuously maintaining a desired performance level 审中-公开等离子处理设备绩效考核过程中，不断维持所需的性能水平
公开(公告)号：EP1720196A1
公开(公告)日：2006-11-08
申请号：EP06014145.4
申请日：2001-09-10
发明人： Ohmi, Tadahiro , Nakano, Akira
CPC分类号： H01J37/32082 , H01J37/32935
摘要： The performance of a plasma processing apparatus which is disassembled, transferred, and reassembled is evaluated. The plasma processing apparatus has a plasma processing chamber(CN) having an electrode (4) for exciting a plasma, a radiofrequency generator (1) connected to the electrode, and an impedance matching circuit (2A) for performing the impedance matching between the plasma processing chamber and the radiofrequency generator. The performance of the apparatus is evaluated whether or not three times the first series resonant frequency of the plasma processing chamber is larger than the power frequency supplied to the plasma processing chamber.
摘要翻译： 的等离子体处理装置的性能，其全部被拆卸，转移，和重新组装的进行评价。 的等离子体处理装置具有在电极的等离子体处理室（CN）（4）用于激发等离子体，所述等离子体之间进行阻抗匹配连接到电极的射频发生器（1），和阻抗匹配电路（2A）的 处理室和所述射频发生器。 该装置的性能进行了评价的等离子体处理室的三倍第一串联谐振频率是否为比供给到该等离子体处理室中的功率频率大。
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公开(公告)号：EP1406292B1
公开(公告)日：2005-04-13
申请号：EP03023423.1
申请日：1999-11-25
发明人： Nakano, Akira , Kim, Sung, Chul , Fukuda, Koichi , Kasama, Yasuhiko , Ohmi, Tadahiro , Ono, Shoichi
CPC分类号： H01J37/32082 , G01R1/06772 , G01R27/02 , H01J37/32935
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公开(公告)号：EP1406292A2
公开(公告)日：2004-04-07
申请号：EP03023423.1
申请日：1999-11-25
发明人： Nakano, Akira , Kim, Sung, Chul , Fukuda, Koichi , Kasama, Yasuhiko , Ohmi, Tadahiro , Ono, Shoichi
CPC分类号： H01J37/32082 , G01R1/06772 , G01R27/02 , H01J37/32935
摘要： The invention provides a plasma equipment which is advantageous in that the suscepter impedance is small, the dependence on the frequency is low, the power consumption efficiency is high, the film forming speed is faster with comparison with the conventional plasma equipment, and the film quality is high. Metalplates (80a, 80b) AC short between a chamber wall (10) and a shield (12) of an electrode of the same DC potential as the chamber.
摘要翻译： 本发明提供了一种等离子体设备，其优点在于，感光体阻抗小，对频率的依赖性低，功率消耗效率高，与传统等离子体设备相比成膜速度更快，并且膜质量 高。 在腔室壁（10）和与腔室具有相同DC电势的电极的屏蔽（12）之间的金属板（80a，80b）AC短路。
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4.发明公开Plasma processing apparatus and performance validation system therefore 审中-公开系统动物系统zum Kontrollieren von deren Wirkungsweise
公开(公告)号：EP1720197A1
公开(公告)日：2006-11-08
申请号：EP06016997.6
申请日：2001-07-10
发明人： Ohmi, Tadahiro , Nakano, Akira
IPC分类号： H01J37/32 , C23C16/509 , C23C16/52
CPC分类号： H01J37/32091 , C23C16/5096 , C23C16/52 , H01J37/32165 , H01J37/32174
摘要： A plasma processing apparatus includes a plasma processing chamber (CN) having a plasma excitation electrode (4) for exciting a plasma, a radiofrequency generator (1) for supplying a radiofrequency voltage to the electrode, a radiofrequency feeder (3) connected to the electrode, and a matching circuit (2A) having an input end (PR3) and an output end (PR). The input end is connected to the radiofrequency generator and the output end is connected to an end of the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator. A frequency which is three times a first series resonant frequency f 0 of the plasma processing chamber which is measured at the end of the radiofrequency feeder is larger than a power frequency f e of the radiofrequency waves.
摘要翻译： 一种等离子体处理装置包括：具有用于激发等离子体的等离子体激励电极（4）的等离子体处理室（CN），向该电极供给射频电压的射频发生器（1）;与该电极连接的射频馈送器 ，以及具有输入端（PR3）和输出端（PR）的匹配电路（2A）。 输入端连接到射频发生器，输出端连接到射频馈线的一端，以实现等离子体处理室与射频发生器之间的阻抗匹配。 在射频馈送器末端测量的等离子体处理室的第一串联谐振频率f 0的三倍的频率大于射频波的功率频率f e。
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公开(公告)号：EP1406292A3
公开(公告)日：2004-06-09
申请号：EP03023423.1
申请日：1999-11-25
发明人： Nakano, Akira , Kim, Sung, Chul , Fukuda, Koichi , Kasama, Yasuhiko , Ohmi, Tadahiro , Ono, Shoichi
CPC分类号： H01J37/32082 , G01R1/06772 , G01R27/02 , H01J37/32935
摘要： The invention provides a plasma equipment which is advantageous in that the suscepter impedance is small, the dependence on the frequency is low, the power consumption efficiency is high, the film forming speed is faster with comparison with the conventional plasma equipment, and the film quality is high. Metalplates (80a, 80b) AC short between a chamber wall (10) and a shield (12) of an electrode of the same DC potential as the chamber.
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公开(公告)号：EP1030345B1
公开(公告)日：2005-10-19
申请号：EP99309434.1
申请日：1999-11-25
发明人： Nakano, Akira , Kim, Sung Chul , Kasama, Yasuhiko , Ohmi, Tadahiro , Ono, Shoichi , Fukuda, Koichi
CPC分类号： H01J37/32082 , G01R1/06772 , G01R27/02 , H01J37/32935
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公开(公告)号：EP1030345A3
公开(公告)日：2003-02-05
申请号：EP99309434.1
申请日：1999-11-25
发明人： Nakano, Akira , Kim, Sung Chul , Kasama, Yasuhiko , Ohmi, Tadahiro , Ono, Shoichi , Fukuda, Koichi
CPC分类号： H01J37/32082 , G01R1/06772 , G01R27/02 , H01J37/32935
摘要： The invention provides a plasma equipment which is advantageous in that the suscepter impedance is small, the dependence on the frequency is low, the power consumption efficiency is high, the film forming speed is faster with comparison with the conventional plasma equipment, and the film quality is high. Metal plates (80a, 80b) AC short between a chamber wall (10) and a shield (12) of an electrode of the same DC potential as the chamber.
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8.发明公开Plasma treatment equipment and impedance measurement tool 有权Plasmabearbeitungsgerätund Werkzeug zur Impedanzmessung
公开(公告)号：EP1030345A2
公开(公告)日：2000-08-23
申请号：EP99309434.1
申请日：1999-11-25
发明人： Nakano, Akira , Kim, Sung Chul , Kasama, Yasuhiko , Ohmi, Tadahiro , Ono, Shoichi , Fukuda, Koichi
IPC分类号： H01J37/32
CPC分类号： H01J37/32082 , G01R1/06772 , G01R27/02 , H01J37/32935
摘要： The invention provides a plasma equipment which is advantageous in that the suscepter impedance is small, the dependence on the frequency is low, the power consumption efficiency is high, the film forming speed is faster with comparison with the conventional plasma equipment, and the film quality is high. Metal plates (80a, 80b) AC short between a chamber wall (10) and a shield (12) of an electrode of the same DC potential as the chamber.
摘要翻译： 本发明提供一种等离子体设备，其优点在于，阻抗较小，与频率的依赖性低，功耗效率高，与常规等离子体设备相比成膜速度更快，并且膜质量 高。 金属板（80a，80b）在室壁（10）和与腔室相同的DC电位的电极的屏蔽（12）之间交流短路。
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9.发明公开
公开(公告)号：EP1179834A2
公开(公告)日：2002-02-13
申请号：EP01305941.5
申请日：2001-07-10
发明人： Nakano, Akira , Ohmi, Tadahiro
IPC分类号： H01J37/32 , C23C16/509 , C23C16/52
CPC分类号： H01J37/32091 , C23C16/5096 , C23C16/52 , H01J37/32165 , H01J37/32174
摘要： A plasma processing apparatus includes a plasma processing chamber (CN) having a plasma excitation electrode (4) for exciting a plasma, a radiofrequency generator (1) for supplying a radiofrequency voltage to the electrode, a radiofrequency feeder (3) connected to the electrode, and a matching circuit (2A) having an input end (PR3) and an output end (PR). The input end is connected to the radiofrequency generator and the output end is connected to an end of the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator. A frequency which is three times a first series resonant frequency f 0 of the plasma processing chamber which is measured at the end of the radiofrequency feeder is larger than a power frequency f e of the radiofrequency waves.
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10.发明公开Plasma processing apparatus and performance validation system therefor 审中-公开系统动物系统zum Kontrollieren von deren Wirkungsweise
公开(公告)号：EP1179834A3
公开(公告)日：2005-11-23
申请号：EP01305941.5
申请日：2001-07-10
发明人： Nakano, Akira , Ohmi, Tadahiro
IPC分类号： H01J37/32 , C23C16/509 , C23C16/52
CPC分类号： H01J37/32091 , C23C16/5096 , C23C16/52 , H01J37/32165 , H01J37/32174
摘要： A plasma processing apparatus includes a plasma processing chamber (CN) having a plasma excitation electrode (4) for exciting a plasma, a radiofrequency generator (1) for supplying a radiofrequency voltage to the electrode, a radiofrequency feeder (3) connected to the electrode, and a matching circuit (2A) having an input end (PR3) and an output end (PR). The input end is connected to the radiofrequency generator and the output end is connected to an end of the radiofrequency feeder so as to achieve impedance matching between the plasma processing chamber and the radiofrequency generator. A frequency which is three times a first series resonant frequency f 0 of the plasma processing chamber which is measured at the end of the radiofrequency feeder is larger than a power frequency f e of the radiofrequency waves.
摘要翻译： 一种等离子体处理装置包括：具有用于激发等离子体的等离子体激励电极（4）的等离子体处理室（CN），向该电极供给射频电压的射频发生器（1）;与该电极连接的射频馈送器 ，以及具有输入端（PR3）和输出端（PR）的匹配电路（2A）。 输入端连接到射频发生器，输出端连接到射频馈线的一端，以实现等离子体处理室与射频发生器之间的阻抗匹配。 在射频馈送器末端测量的等离子体处理室的第一串联谐振频率f0的三倍的频率大于射频波的功率频率fe。
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