公开(公告)号：EP1872397B1

公开(公告)日：2013-04-17

申请号：EP06749072.2

申请日：2006-03-30

申请人： Applied Materials, Inc.

发明人： JENNINGS, Dean ,  LANG, Haifan ,  YAM, Mark ,  PARIHAR, Vijay ,  MAYUR, Abhilash ,  HUNTERN, Aaron ,  ADAMS, Bruce ,  RANISH, Joseph, Michael

IPC分类号： H01L21/428 ,  B23K26/00 ,  B23K26/06 ,  B23K26/073

CPC分类号： B23K26/0608 ,  B23K26/0066 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO 2 emitting at 10.6 mum is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO 2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

公开(公告)号：EP1824637A1

公开(公告)日：2007-08-29

申请号：EP05813276.2

申请日：2005-10-12

申请人： Applied Materials, Inc.

发明人： ADAMS, Bruce, E. ,  JENNINGS, Dean ,  HUNTER, Aaron, M. ,  MAYUR, Abhilash, J. ,  PARIHAR, Vijay

IPC分类号： B23K26/42

CPC分类号： B23K26/032 ,  B23K26/03 ,  B23K26/0604 ,  B23K26/0676 ,  B23K26/0738 ,  B23K26/702 ,  B23K2201/40

摘要： A thermal processing system (10) includes a source of laser radiation having an array (34) of lasers emitting light at a laser wavelength, a substrate support, optics (48,52,62,64,66,70) disposed between said source and said substrate support for forming a line beam in a substrate plane of the substrate support from the light emitted by the source of laser radiation, and scanning apparatus (16,18) for effecting movement of said line beam relative to said substrate support in a direction transverse to the longitudinal axis of said line beam. The system further includes a housing (68) encompassing said optics, a light detector (81) disposed inside said housing for sensing an ambient light level, a power supply (100) coupled to the source of laser radiation, and a controller (90) governing said power supply and responsive to said light detector (81) for interrupting said power supply upon an increase in the output of said light detector (81) above a threshold ambient level.

公开(公告)号：EP2033218A1

公开(公告)日：2009-03-11

申请号：EP07783395.2

申请日：2007-05-07

申请人： Applied Materials, Inc.

发明人： NOURI, Faran ,  KIM, Eun-Ha ,  THIRUPAPULIYUR, Sunderraj ,  PARIHAR, Vijay

IPC分类号： H01L21/8238

CPC分类号： H01L29/665 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/823814 ,  H01L21/823835 ,  H01L29/6659 ,  H01L29/7833

摘要： Methods for reducing contact resistance in semiconductor devices are provided in the present invention. In one embodiment, the method includes providing a substrate having semiconductor device formed thereon, wherein the device has source and drain regions and a gate structure formed therein, performing a silicidation process on the substrate by a thermal annealing process, and performing a laser anneal process on the substrate. In another embodiment, the method includes providing a substrate having implanted dopants, performing a silicidation process on the substrate by a thermal annealing process, and activating the dopants by a laser anneal process.

公开(公告)号：EP1831658A2

公开(公告)日：2007-09-12

申请号：EP05809879.9

申请日：2005-10-12

申请人： APPLIED MATERIALS, INC.

发明人： ADAMS, Bruce, E. ,  JENNINGS, Dean ,  HUNTER, Aaron, M. ,  MAYUR, Abhilash, J. ,  PARIHAR, Vijay ,  THOMAS, Timothy, N.

IPC分类号： G01J5/06 ,  B23K26/073 ,  B23K26/03

CPC分类号： G02B5/281 ,  G01J5/06 ,  H01S5/005 ,  H01S5/4012

摘要： A thermal processing system includes a source of laser radiation emitting at a laser wavelength, beam projection optics disposed between the reflective surface and a substrate support capable of holding a substrate to be processed, a pyrometer responsive to a pyrometer wavelength, and a wavelength responsive optical element having a first optical path for light in a first wavelength range including the laser wavelength, the first optical path being between the source of laser radiation and the beam projection optics, and a second optical path for light in a second wavelength range including the pyrometer wavelength, the second optical path being between the beam projection optics and the pyrometer. The system can further include a pyrometer wavelength blocking filter between the source of laser radiation and the wavelength responsive optical element.

公开(公告)号：EP1831658B1

公开(公告)日：2016-08-03

申请号：EP05809879.9

申请日：2005-10-12

申请人： Applied Materials, Inc.

发明人： ADAMS, Bruce, E. ,  JENNINGS, Dean ,  HUNTER, Aaron, M. ,  MAYUR, Abhilash, J. ,  PARIHAR, Vijay ,  THOMAS, Timothy, N.

IPC分类号： G02B5/28 ,  H01S5/00 ,  H01S5/40 ,  G01J5/06

CPC分类号： G02B5/281 ,  G01J5/06 ,  H01S5/005 ,  H01S5/4012

公开(公告)号：EP1828820A1

公开(公告)日：2007-09-05

申请号：EP05804317.5

申请日：2005-10-12

申请人： APPLIED MATERIALS, INC.

发明人： ADAMS, Bruce, E. ,  JENNINGS, Dean ,  MAYUR, Abhilash ,  PARIHAR, Vijay ,  RANISH, Joseph, M.

IPC分类号： G02B6/00 ,  H01L21/324 ,  H01L21/268

CPC分类号： G02B6/003 ,  G02B6/0046 ,  G02B6/0056 ,  G02B6/0068

摘要： Apparatus for thermally processing a semiconductor wafer includes an array of semiconductor laser emitters arranged in plural parallel rows extending along a slow axis, plural respective cylindrical lenses overlying respective ones of the rows of laser emitters for collimating light from the respective rows along a fast axis generally perpendicular to the slow axis, a homogenizing light pipe having an input face at a first end for receiving light from the plural cylindrical lenses and an output face at an opposite end, the light pipe comprising a. pair of reflective walls extending between the input and output faces and separated from one another along the direction of the slow axis, and scanning apparatus for scanning light emitted from the homogenizing light pipe across the wafer in a scanning direction parallel to the fast axis.